| 1. |
- Shubina, Tatiana, et al.
(författare)
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Optical properties of GaN/AlGaN quantum wells with inversion domains
- 2003
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Ingår i: Physica status solidi. A, Applied research. - : Wiley. - 0031-8965 .- 1521-396X. ; 195:3, s. 537-542
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Tidskriftsartikel (refereegranskat)abstract
- Two-band photoluminescence (PL) and respective absorption and reflection features are observed in GaN/AlGaN MBE-grown quantum well (QW) structures of dominant N polarity with inversion domains (IDs). The PL bands are related to transitions in the regions of different polarity, characterized by different strain and electric fields. A micro-PL study reveals sharp and narrow (1.5-2.5 meV) PL lines placed between the bands, which are tentatively attributed to recombination at localization sites associated with intersections of the QWs with the domains. Additionally, we demonstrate that the ID formation decreases the overall strength of the intrinsic electric fields in the QW structures.
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| 2. |
- Ochalski, T.J., et al.
(författare)
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Optical study of AlGaN/GaN based HEMT structures
- 2005
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Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - 1610-1634 .- 1610-1642. ; 2, s. 2791-2794
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Tidskriftsartikel (refereegranskat)
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| 3. |
- Ochalski, TJ, et al.
(författare)
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Optical study of AlGaN/GaN based HEMT structures grown on sapphire and SiC
- 2005
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Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 202:7, s. 1300-1307
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Tidskriftsartikel (refereegranskat)abstract
- A detailed photoluminescence (PL), time-resolved photoluminescence (TRPL), and photoreflectance (PR) analysis of AlGaN/GaN heterostructures grown on different substrates: sapphire and silicon carbide (SiC) is presented in this paper. The properties of high electron mobility transistors (HEMTs) based on AlGaN/GaN structures are strongly dependent on the quality of the AlxGa1-xN top layer. We have examined a number of samples, grown on sapphire, in which the thicknesses of the Al0.3Ga0.7N layers vary from 18 to 75 nm. Room temperature PL under pulsed 266 nm excitation allowed for determination of the AI content in the examined thin AlGaN layers. Time-resolved PL measured at 1.6 K showed huge difference in the emission dynamics for different Al0.3Ga0.7N layer thicknesses. We observed an enormous increase of the emission decay time above the critical thickness of the AlGaN layer. PR spectra (associated with the GaN main layer) measured on AlGaN/GaN systems are discussed in terms of the thickness of the capping layer. The PR modulated by a high power 266 nm pulsed laser measured on a transistor structure exhibited an additional feature placed between signals related to the GaN and AlGaN layers, respectively. Such a transition is possible to monitor only for the structures of the best quality and is accordingly observable only on samples grown on SiC. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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