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Träfflista för sökning "WFRF:(Hsu Yi Hsuan) "

Search: WFRF:(Hsu Yi Hsuan)

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1.
  • Beal, Jacob, et al. (author)
  • Robust estimation of bacterial cell count from optical density
  • 2020
  • In: Communications Biology. - : Springer Science and Business Media LLC. - 2399-3642. ; 3:1
  • Journal article (peer-reviewed)abstract
    • Optical density (OD) is widely used to estimate the density of cells in liquid culture, but cannot be compared between instruments without a standardized calibration protocol and is challenging to relate to actual cell count. We address this with an interlaboratory study comparing three simple, low-cost, and highly accessible OD calibration protocols across 244 laboratories, applied to eight strains of constitutive GFP-expressing E. coli. Based on our results, we recommend calibrating OD to estimated cell count using serial dilution of silica microspheres, which produces highly precise calibration (95.5% of residuals <1.2-fold), is easily assessed for quality control, also assesses instrument effective linear range, and can be combined with fluorescence calibration to obtain units of Molecules of Equivalent Fluorescein (MEFL) per cell, allowing direct comparison and data fusion with flow cytometry measurements: in our study, fluorescence per cell measurements showed only a 1.07-fold mean difference between plate reader and flow cytometry data.
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2.
  • Hsu, Yu-Hsuan, et al. (author)
  • epsilon-Ga2O3 Grown on c-Plane Sapphire by MOCVD with a Multistep Growth Process
  • 2022
  • In: Crystal Growth & Design. - : AMER CHEMICAL SOC. - 1528-7483 .- 1528-7505. ; 22:3
  • Journal article (peer-reviewed)abstract
    • Gallium oxide (Ga2O3) has especially become popular because of its established applications in semiconductors. Of five polymorphs, monoclinic beta-Ga2O3 is the most thermodynamically stable phase. However, orthorhombic Ga2O3 (also known as epsilon-Ga2O3 or kappa-Ga2O3) is gaining increasing interest due to its high lattice symmetry and peculiar ferroelectricity. Although the structural approach for estimating Ga2O3 has been studied both theoretically and experimentally, epsilon-Ga2O3 and kappa-Ga2O3 are still confused. In this study, epsilon-Ga2O3 epilayers are grown on c-plane sapphire by metal-organic chemical vapor deposition with a multistep growth process. A thin annealed epsilon-Ga2O3 buffer layer is grown in the first step. The sequent growth steps with slow, fast, or combination of slow then fast growth rate significantly influence the quality of epilayers compared with that of directly grown Ga2O3. Through a detailed transmission electron microscopy (TEM) characterization of these Ga2O3 epilayers, the structural relationship between orthorhombic kappa-Ga2O3 and hexagonal epsilon-Ga2O3 is elucidated. A series of first-principles density functional theory calculations are also carried out to confirm the argument.
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