2. |
- Huang, D., et al.
(författare)
-
CMOS device reliability : A modified charge-pumping method for the characterization of interface-trap generation in MOSFETs
- 2011
-
Ingår i: Selected Semiconductor Research. - : World Scientific Pub Co Pte Ltd. ; , s. 301-308
-
Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- A novel recovery-free interface-trap measurement method is presented in detail. This method is the modification of the conventional charge pumping (CP) by extending the pulse low-level to the stress-bias and minimizing the pulse high-level duty cycle to suppress the recovery effect. The method is applied to study the negative-bias temperature instability in p-MOSFETs. As compared with the conventional CP, a much larger interface-trap generation under stress is observed by the new method. A power law time dependence (~ tn) of interface-trap generation is observed. The index n is less than that derived from conventional CP and increases with temperature, demonstrating a dispersive process involved in the trap generation dynamics.
|
|