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- Schweinsberg, Martin, et al.
(författare)
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Same data, different conclusions : Radical dispersion in empirical results when independent analysts operationalize and test the same hypothesis
- 2021
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Ingår i: Organizational Behavior and Human Decision Processes. - : Elsevier BV. - 0749-5978 .- 1095-9920. ; 165, s. 228-249
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Tidskriftsartikel (refereegranskat)abstract
- In this crowdsourced initiative, independent analysts used the same dataset to test two hypotheses regarding the effects of scientists' gender and professional status on verbosity during group meetings. Not only the analytic approach but also the operationalizations of key variables were left unconstrained and up to individual analysts. For instance, analysts could choose to operationalize status as job title, institutional ranking, citation counts, or some combination. To maximize transparency regarding the process by which analytic choices are made, the analysts used a platform we developed called DataExplained to justify both preferred and rejected analytic paths in real time. Analyses lacking sufficient detail, reproducible code, or with statistical errors were excluded, resulting in 29 analyses in the final sample. Researchers reported radically different analyses and dispersed empirical outcomes, in a number of cases obtaining significant effects in opposite directions for the same research question. A Boba multiverse analysis demonstrates that decisions about how to operationalize variables explain variability in outcomes above and beyond statistical choices (e.g., covariates). Subjective researcher decisions play a critical role in driving the reported empirical results, underscoring the need for open data, systematic robustness checks, and transparency regarding both analytic paths taken and not taken. Implications for orga-nizations and leaders, whose decision making relies in part on scientific findings, consulting reports, and internal analyses by data scientists, are discussed.
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3. |
- Svensson, BG, et al.
(författare)
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Doping of silicon carbide by ion implantation
- 2001
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Ingår i: Materials Science Forum, Vols. 353-356. - : Trans Tech Publications Inc.. - 9780878498734 - 0878498737 ; , s. 549-554, s. 549-554
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Konferensbidrag (refereegranskat)abstract
- A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10(9) and 10(15) cm(-2) and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation (less than or equal to 10(10) cm(-2)) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 degreesC. However, at higher doses (10(14)-10(15) Al/cm(2)) the rate of defect recombination (annihilation) increases substantially during hot implants (greater than or equal to 200 degreesC) and in these samples one type of structural defect dominates after past-implant annealing at 1700-2000 degreesC. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is discussed.
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