| 1. |
- Arnalds, U. B., et al.
(författare)
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A magnetron sputtering system for the preparation of patterned thin films and in situ thin film electrical resistance measurements
- 2007
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Ingår i: Review of Scientific Instruments. - : AIP Publishing. - 0034-6748 .- 1089-7623. ; 78:10, s. 103901-
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Tidskriftsartikel (refereegranskat)abstract
- We describe a versatile three gun magnetron sputtering system with a custom made sample holder for in situ electrical resistance measurements, both during film growth and ambient changes on film electrical properties. The sample holder allows for the preparation of patterned thin film structures, using up to five different shadow masks without breaking vacuum. We show how the system is used to monitor the electrical resistance of thin metallic films during growth and to study the thermodynamics of hydrogen uptake in metallic thin films. Furthermore, we demonstrate the growth of thin film capacitors, where patterned films are created using shadow masks.
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| 2. |
- Ingason, A. S., et al.
(författare)
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Growth and structural properties of Mg:C thin films prepared by magnetron sputtering
- 2010
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 518:15, s. 4225-4230
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the growth and structure properties of Mg:C thin films. The films are prepared using a dc magnetron sputtering discharge where the electrical resistance over the films is monitored during growth in-situ with a four point probe setup. The structural properties of the films are investigated using X-ray diffraction measurements and the elemental composition and binding in the films is determined using elastic recoil detection analysis and X-ray photoelectron spectroscopy. The results show that during co-sputtering the carbon flux influences the initial stages of the film growth. The films are made of polycrystalline magnesium grains embedded in a carbon network, the size of which depends on the carbon content, but amorphous phases cannot be excluded. The XPS measurements show the presence of carbidic carbon whereas X-ray measurements find no Mg:C phases. The overall stability of the films is found to depend on the carbon content, where stable films capped with a 14 nm Pd layer cannot be obtained with carbon content above 18%.
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| 3. |
- Thorsteinsson, E. B., et al.
(författare)
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Room temperature ferromagnetism in the nanolaminated MAX phase (Mn1−xCrx)2GaC
- 2023
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Ingår i: APL Materials. - : AIP Publishing. - 2166-532X. ; 11:12
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Tidskriftsartikel (refereegranskat)abstract
- MAX phases are a class of intrinsically nanolaminated materials, which combine features of metals and ceramics, owing to the alternating metallic and covalent bonding between atomic layers. Magnetic MAX phases have been known for a decade, but ferromagnetism at room temperature in this highly anisotropic system has been elusive, limiting their value as magnets in practice. Here, we show that a MAX phase with a strong ferromagnetic response is obtained by substituting Mn with Cr on the M-site in the well-known Mn2GaC. The ferromagnetic response is observed in (Mn1-xCrx)(2)GaC with 0.06 < x < 0.29 up to temperatures well exceeding room temperature (489 K). The strongest magnetization is achieved with x = 0.12, reaching a saturation moment of 1.25 mu B and a remanence of 0.67 mu(B) per M-atom at 3 K and maintaining 0.90 and 0.44 mu(B) per M-atom, respectively, at 300 K. This is the first experimental report of a significant ferromagnetic response in a MAX phase at room temperature. The results open the door to the use of MAX phases in a broad range of applications, from bulk magnets in power electronics to spintronic devices.(c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(http://creativecommons.org/licenses/by/4.0/).
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| 4. |
- Agnarsson, Björn, 1977, et al.
(författare)
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Rutile TiO 2 thin films grown by reactive high power impulse magnetron sputtering
- 2013
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 545, s. 445-450
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Tidskriftsartikel (refereegranskat)abstract
- Thin TiO 2 films were grown on Si(001) substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 C.Optical and structural properties of films were compared both before and after post-annealing using scanning electron microscopy, low angle X-ray reflection (XRR), grazing inc idence X-ray diffractometry and spectroscopic ellipsometry.Both dcMS- and HiPIMS-grown films reveal polycrystalline rutile TiO 2 , even prior to post-annealing.The HiPIMS-grown films exhibit significantly larger grains compared to that of dcMC-grown films, approaching 100% of the film thickness for films grown at 700 C.In addition, the XRR surface roughness of HiPIMS-grown films was significantly lower than that of dcMS-grown films over the whole temperature range 300-700 C.Dispersion curves could only be obtained for the HiPIMS-grown films, which were shown to have a refractive index in the range of 2.7-2.85 at 500 nm.The results show that thin, rutile TiO 2 films, with high refractive index, can be obtained by HiPIMS at relatively low growth temperatures, without post-annealing.Furthermore, these films are smoother and show better optical characteristics than their dcMS-grown counterparts.© 2013 Elsevier B.V.All rights reserved.
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| 5. |
- Agustsson, J. S., et al.
(författare)
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Electrical resistivity and morphology of ultra thin Pt films grown by dc magnetron sputtering on SiO(2)
- 2008
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Ingår i: Journal of Physics Conference Series. - : IOP Science. - 1742-6596.
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Konferensbidrag (refereegranskat)abstract
- Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si (100) substrates. The electrical resistance of the films was monitored in-situ during growth. The coalescence thickness was determined for various growth temperatures and found to increase from 1.3 nm for films grown at room temperature to 1.8 nm for films grown at 250 degrees C, while a continuous film was formed at a thickness of 3.9 nm at room temperature and 3.5 nm at 250 degrees C. The electrical resistivity increases with increased growth temperature, as well as the morphological grain size, and the surface roughness, measured with a scanning tunneling microscope (STM).
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| 6. |
- Agustsson, J. S., et al.
(författare)
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Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO2
- 2008
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 254:22, s. 7356-7360
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Tidskriftsartikel (refereegranskat)abstract
- Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si (100) substrates. The electrical resistance of the films was monitored in situ during growth. The coalescence thickness was determined for various growth temperatures and found to increase from 1.1 nm for films grown at room temperature to 3.3 nm for films grown at 400 degrees C. A continuous film was formed at a thickness of 2.9 nm at room temperature and 7.5 nm at 400 degrees C. The room temperature electrical resistivity decreases with increased growth temperature, while the in-plain grain size and the surface roughness, measured with a scanning tunneling microscope (STM), increase. Furthermore, the temperature dependence of the film electrical resistance was explored at various stages during growth.
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| 7. |
- Gylfason, Kristinn B., 1978-, et al.
(författare)
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In-situ resistivity measurements during growth of ultra-thin Cr_0.7Mo_0.3
- 2006
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 515:2, s. 583-586
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Tidskriftsartikel (refereegranskat)abstract
- The growth of ultra-thin, lattice matched, Cr0.7Mo0.3 films on an MgO substrate, in a dc magnetron discharge, was investigated by in situ measurements in order to determine the minimum thickness of a continuous layer. The thickness dependence of the resistivity shows a coalescence thickness of less than two monolayers indicating layer by layer growth of the films. We compare the resistivity of the films to a combination of the Fuchs- Sondheimer and the Mayadas-Shatzkes models, assuming a thickness dependence of grain size. The model indicates that grain size increases with increasing growth temperature.
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