| 1. |
- Bogdanov, Alex, 1962, et al.
(författare)
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Dual pass electron beam writing of bit arrays with sub-100 nm bits on imprint lithography masters for patterned media production
- 2003
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Ingår i: Microelectronic Engineering. - 0167-9317. ; 67-68, s. 381-389
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Konferensbidrag (refereegranskat)abstract
- A model and experimental results of a new method for exposing bit arrays with electron beam lithography are presented. The method allows the reduction of the amount of pattern data by orders of magnitude. The method utilises two overlapped exposures. In the first exposure a 1-D array of parallel stripes is written and in the second exposure another I-D array of parallel stripes orthogonal to the first ones. Exposure dose is chosen so that after development only the areas where a positive resist have been subjected to overlapped exposure are fully developed. The bit size is determined by the widths of the stripes. In order to compensate for an approximately 50% loss of contrast a contrast enhancement scheme utilizing a trilayer resist was used.
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| 2. |
- Farmakis, F. V., et al.
(författare)
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Field-effect transistors with thin ZnO as active layer for gas sensor applications
- 2007
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317. ; 85:5-6, s. 1035-1038
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Konferensbidrag (refereegranskat)abstract
- Zinc oxide based field-effect devices prepared for gas sensing applications are studied. For this purpose, bottom-gate transistors were fabricated using Pd as source and drain interdigitated electrodes with gate lengths varying from 0.3 to 2 mu m. Thin (50 nm) zinc oxide films were grown with the aid of pulsed laser deposition (PLD) at room temperature and served as active and sensing layer. AFM and XRD analysis demonstrated the polycrystalline nature of the c-axis oriented ZnO films with nanoscale grain size (20-40 nm) with relatively high average roughness. Electrical and gas sensing measurements from the above-mentioned devices are presented. (C) 2008 Elsevier B.V. All rights reserved.
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| 3. |
- Jedrasik, Piotr, 1957, et al.
(författare)
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Application of calixarene for nanometer magnetic particle fabrication
- 2000
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Ingår i: Microelectronic Engineering. - 0167-9317. ; 53, s. 497-500
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Konferensbidrag (refereegranskat)abstract
- An application of the negative tone electron beam resist Calixarene for fabrication of nanometer magnetic particles is reported. Thorough resist characterisation is performed. Proximity tests for characterization of the intraproximity behaviour of the resist on the tested substrate is investigated to compensate for modulation of lateral dimensions due to electron scattering. Magnetic particles were fabricated by a combination of EBL and ion beam milling using Calixarene as a transfer layer down to Fe. We fabricated arrays of circular particles with characteristic dimensions down to 40 nm. Initial results of topographic and magnetic force microscopy are reported
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| 4. |
- Rommel, Marcus, 1987, et al.
(författare)
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Sub-10 nm resolution after lift-off using HSQ./PMMA double layer resist
- 2013
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317. ; 110, s. 123-125
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Tidskriftsartikel (refereegranskat)abstract
- Hydrogen silesquioxan (HSQ) is a well-investigated negative tone inorganic resist [1,2] which is known for its capabilities for high resolution electron beam lithography (EBL) and its stability against dry etching [3]. In this paper, we introduce a process to create dense structures by EBL utilizing a layer of polymethyl-methacrylate (PMMA) as sacrificial layer beneath a HSQ layer. The sacrificial layer allows a simple lift-off process to remove the HSQ with organic solvents and thus avoids the use of hydrofluoric acid (HF) containing etchants, which is the commonly used HSQ remover [4]. The described double layer resist system allows patterning on substrates that are not HF compatible such as glass or oxide compounds, achieving a high resolution down to the sub-10 nm regime. Despite the use of a double layer resist, this process is applicable for arbitrarily large areas due to the remaining PMMA underneath the HSQ and the avoidance of undercuts.
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