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Sub-10 nm resolutio...
Sub-10 nm resolution after lift-off using HSQ./PMMA double layer resist
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- Rommel, Marcus, 1987 (författare)
- Max Planck Gesellschaft zur Förderung der Wissenschaften e.V. (MPG),Max Planck Society for the Advancement of Science (MPG)
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- Nilsson, Bengt, 1954 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Jedrasik, Piotr, 1957 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Bonanni, Valentina, 1980 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Dmitriev, Alexander, 1975 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Weis, Juergen (författare)
- Max Planck Gesellschaft zur Förderung der Wissenschaften e.V. (MPG),Max Planck Society for the Advancement of Science (MPG)
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Max Planck Gesellschaft zur Förderung der Wissenschaften eV. (MPG) Chalmers tekniska högskola (creator_code:org_t)
- Elsevier BV, 2013
- 2013
- Engelska.
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317. ; 110, s. 123-125
- Relaterad länk:
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http://dx.doi.org/10...
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https://doi.org/10.1...
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https://research.cha...
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Abstract
Ämnesord
Stäng
- Hydrogen silesquioxan (HSQ) is a well-investigated negative tone inorganic resist [1,2] which is known for its capabilities for high resolution electron beam lithography (EBL) and its stability against dry etching [3]. In this paper, we introduce a process to create dense structures by EBL utilizing a layer of polymethyl-methacrylate (PMMA) as sacrificial layer beneath a HSQ layer. The sacrificial layer allows a simple lift-off process to remove the HSQ with organic solvents and thus avoids the use of hydrofluoric acid (HF) containing etchants, which is the commonly used HSQ remover [4]. The described double layer resist system allows patterning on substrates that are not HF compatible such as glass or oxide compounds, achieving a high resolution down to the sub-10 nm regime. Despite the use of a double layer resist, this process is applicable for arbitrarily large areas due to the remaining PMMA underneath the HSQ and the avoidance of undercuts.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Nyckelord
- Electron beam lithography
- HSQJPMMA double layer resist
- Sub-10 nm resolution
- HF free lift-off
- Plasmonics
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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