| 1. |
- Bengtsson, Magnus, et al.
(författare)
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Fluorescence lidar imaging of fungal growth on high-voltage outdoor composite insulators
- 2005
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Ingår i: Optics and Lasers in Engineering. - : Elsevier BV. - 0143-8166 .- 1873-0302. ; 43:6, s. 624-632
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Tidskriftsartikel (refereegranskat)abstract
- Remote fluorescence imaging of fungal growth on polymeric high-voltage insulators was performed using a mobile lidar system with a laser wavelength of 355 nm. Insulator areas contaminated by fungal growth could be distinguished from clean surfaces and readily be imaged. The experiments were supported by detailed spectral studies performed in laboratory using a fibre-optic fluorosensor incorporating an optical multi-channel analyser system (OMA) and a nitrogen laser emitting radiation at 33 7 nm.
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| 2. |
- Caut, Alexander, 1994, et al.
(författare)
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Angled Flip-Chip Integration of VCSELs on Silicon Photonic Integrated Circuits
- 2022
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Ingår i: Journal of Lightwave Technology. - 0733-8724 .- 1558-2213. ; 40:15, s. 5190-5200
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Tidskriftsartikel (refereegranskat)abstract
- An investigation of angled flip-chip integration of a singlemode 850 nm vertical-cavity surface-emitting laser (VCSEL) on a silicon nitride photonic integrated circuit (PIC) is presented. Using numerical FDTD simulations, we consider the conditions under which the VCSEL can be integrated at an angle over a grating coupler with high coupling efficiency and low optical feedback. With both coupling efficiency and feedback decreasing with increasing angle, there is a trade-off. With co-directional coupling, first-order diffraction loss sets in at a critical angle, which further reduces the coupling efficiency. No such critical angle exists for contra-directional coupling. We also experimentally demonstrate angled flip-chip integration of GaAs-based 850 nm single transverse and polarization mode VCSELs over grating couplers on a silicon-nitride PIC. At the output grating coupler, light is either collected by an optical fiber or converted to a photocurrent using a flip-chip integrated GaAs-based photodetector. The latter forms an on-PIC optical link. We measured an insertion loss of 21.9, 17.6 and 20.1 dB with a singlemode fiber, multimode fiber and photodetector over the output grating coupler, respectively.
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| 3. |
- Caut, Alexander, 1994, et al.
(författare)
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Channel Scalability of Silicon Nitride (De-)multiplexers for Optical Interconnects at 1 μm
- 2024
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Ingår i: Journal of Lightwave Technology. - 0733-8724 .- 1558-2213. ; 42:1, s. 276-286
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents an investigation of the channel scalability of silicon nitride (Si3N4)-based (de-)multiplexers in the 1-μm band (1015-1055 nm). We discuss 4-, 8- and 16-channel demultiplexers based on arrayed waveguide gratings (AWGs) and cascaded Mach-Zehnder interferometers (MZIs), with corresponding channel spacings of 8, 4 and 2 nm. Gaussian and flat-top response devices are considered for both technologies and we analyze the insertion loss, temperature sensitivity, response flatness, footprint and crosstalk (XT). We study the impact of the number of channels on the insertion loss and XT level. In the experimental part, we demonstrate a 4-channel Gaussian AWG. We also demonstrate 4-channel Gaussian and flat-top cascaded MZIs, based on multimode interferometers (MMIs) and directional couplers (DCs). The AWG is attractive due to its small footprint but its high manufacturing complexity makes the device more prone to fabrication defects, which can lead to higher loss and higher XT. For the Gaussian AWG and MZI, the XT level is approximately the same and increases with the number of channels from -28 to -23 dB at 4 and 16 channels respectively. The flat-top MZI has no extra-loss with respect to the flat-top AWG and has a better tolerance to high temperature operations. However, due to wavelength sensitive DCs, the XT of the flat-top MZI is higher than that of the flat-top AWG except for a 16-channel system.
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| 4. |
- Girardi, Marcello, 1991, et al.
(författare)
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3D Integration of Microcombs
- 2023
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Ingår i: 2023 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2023.
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Konferensbidrag (refereegranskat)abstract
- Microcombs based on silicon nitride are a promising technology in applications such as sensing, metrology and telecommunication [1]. These applications often require to combine a nonlinear waveguide with a linear integrated processor on the same chip to perform functionalities such as splitting, demultiplexing, and optical buffering. However, there is a fundamental performance tradeoff between linear and nonlinear waveguides. For microcomb generation, thick waveguide cores are necessary to achieve the desired anomalous dispersion, while for linear operation a thin core improves the loss of a single mode (SM) waveguide [2]. The dissimilar requirements in waveguide thickness brings challenges for planar integrated technologies. Here, we propose and demonstrate wafer-level three-dimensional integration of microcombs using two different Si3N4 core thicknesses: a thick core featuring dispersion-engineered microcombs and a thinner core for linear processing (see Fig. 1a). This technology breaks off the fundamental tradeoff between loss and confinement in thick waveguides and opens the door to combine high-performance microcombs with ultra-low-loss silicon nitride waveguide technology [3]. We demonstrate this approach by efficiently coupling a microcomb between two layers of Si3N4 and demultiplexing a few lines with an arrayed waveguide grating (AWG) (Fig 1b).
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| 5. |
- Girardi, Marcello, 1991, et al.
(författare)
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Multilayer integration in silicon nitride: decoupling linear and nonlinear functionalities for ultralow loss photonic integrated systems
- 2023
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Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 31:19, s. 31435-31446
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Tidskriftsartikel (refereegranskat)abstract
- Silicon nitride is an excellent material platform for its extremely low loss in a large wavelength range, which makes it ideal for the linear processing of optical signals on a chip. Moreover, the Kerr nonlinearity and the lack of two-photon absorption in the near infrared enable efficient nonlinear optics, e.g., frequency comb generation. However, linear and nonlinear operations require distinct engineering of the waveguide core geometry, resulting in a tradeoff between optical loss and single-mode behavior, which hinders the development of high-performance, ultralow-loss linear processing blocks on a single layer. Here, we demonstrate a dual-layer photonic integration approach with two silicon-nitride platforms exhibiting ultralow optical losses, i.e., a few dB/m, and individually optimized to perform either nonlinear or linear processing tasks. We demonstrate the functionality of this approach by integrating a power-efficient microcomb with an arrayed waveguide grating demultiplexer to filter a few frequency comb lines in the same monolithically integrated chip. This approach can significantly improve the integration of linear and nonlinear optical elements on a chip and opens the way to the development of fully integrated processing of Kerr nonlinear sources.
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| 6. |
- Gustavsson, Johan, 1974, et al.
(författare)
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High-speed 850-nm VCSELs for 40 Gb/s transmission
- 2010
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- We have explored the possibility to extend the data transmission rate for standard 850-nm GaAs-based VCSELs beyond the 10 Gbit/s limit of today's commercially available directly-modulated devices. By sophisticated tailoring of the design for high-speed performance we demonstrate that 10 Gb/s is far from the upper limit. For example, the thermal conductivity of the bottom mirror is improved by the use of binary compounds, and the electrical parasitics are kept at a minimum by incorporating a large diameter double layered oxide aperture in the design. We also show that the intrinsic high speed performance is significantly improved by replacing the traditional GaAs QWs with strained InGaAs QWs in the active region. The best overall performance is achieved for a device with a 9 μm diameter oxide aperture, having in a threshold current of 0.6 mA, a maximum output power of 9 mW, a thermal resistance of 1.9 °C/mW, and a differential resistance of 80 Ω. The measured 3dB bandwidth exceeds 20 GHz, and we experimentally demonstrate that the device is capable of error-free transmission (BER
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| 7. |
- Jorgensen, A. A., et al.
(författare)
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Petabit-per-second data transmission using a chip-scale microcomb ring resonator source
- 2022
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Ingår i: Nature Photonics. - : Springer Science and Business Media LLC. - 1749-4885 .- 1749-4893. ; 16:11, s. 798-802
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Tidskriftsartikel (refereegranskat)abstract
- Optical fibre communication is the backbone of the internet. As essential core technologies are approaching their limits of size, speed and energy-efficiency, there is a need for new technologies that offer further scaling of data transmission capacity. Here we show that a single optical frequency-comb source based on a silicon nitride ring resonator supports data capacities in the petabit-per-second regime. We experimentally demonstrate transmission of 1.84 Pbit s–1 over a 37-core, 7.9-km-long fibre using 223 wavelength channels derived from a single microcomb ring resonator producing a stabilized dark-pulse Kerr frequency comb. We also present a theoretical analysis that indicates that a single, chip-scale light source should be able to support 100 Pbit s–1 in massively parallel space-and-wavelength multiplexed data transmission systems. Our findings could mark a shift in the design of future communication systems, targeting device-efficient transmitters and receivers.
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| 8. |
- Kong, D., et al.
(författare)
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Single Dark-Pulse Kerr Comb Supporting 1.84 Pbit/s Transmission over 37-Core Fiber
- 2020
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Ingår i: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. - 1092-8081. ; 2020-May
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Konferensbidrag (refereegranskat)abstract
- We show that a single dark-pulse Kerr comb can generate high enough OSNR to carry 1.84 Pbit/s data, achieved by 223 WDM spectral lines modulated with 32-Gbaud, SNR-adapted probabilistically shaped DP-QAM, over a 37-core fiber.
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| 9. |
- Larsson, Anders, 1957, et al.
(författare)
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High speed VCSELs for optical interconnects
- 2012
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467317252 ; , s. 269-272
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Konferensbidrag (refereegranskat)abstract
- This paper presents an overview of our recent work on high speed, oxide confined, 850 nm vertical cavity surface emitting lasers (VCSELs). With proper active region and cavity designs, and techniques for reducing capacitance and thermal impedance, we have reached a modulation bandwidth of 23 GHz and demonstrated 40 Gbps transmission. Using an integrated mode filter for reducing the spectral width we have extended the reach on multimode fiber at 25 Gbps from 100 to 500 m. Improved link capacity was also demonstrated using a more spectrally efficient multi-level modulation format (4-PAM). Finally, a MEMS-technology for wafer scale integration of tunable high speed VCSELs was developed, enabling a tuning range of 24 nm, a 6 GHz modulation bandwidth, and 5 Gbps transmission.
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| 10. |
- Larsson, Anders, 1957, et al.
(författare)
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VCSEL design and integration for high-capacity optical interconnects
- 2017
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9781510606593 ; 10109, s. 101090M-
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Konferensbidrag (refereegranskat)abstract
- Vertical-cavity surface-emitting lasers and multi-mode fibers is the dominating technology for short-reach optical interconnects in datacenters and high performance computing systems at current serial rates of up to 25-28 Gbit/s. This is likely to continue at 50-56 Gbit/s. The technology shows potential for 100 Gbit/s.
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