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Träfflista för sökning "WFRF:(Kim S. H.) srt2:(2000-2004);lar1:(gu)"

Search: WFRF:(Kim S. H.) > (2000-2004) > University of Gothenburg

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  • Yu, H.Y., et al. (author)
  • Current enhancement with alternating gate voltage in the Coulomb blockade regime of a single wall carbon nanotube
  • 2004
  • In: Applied Physics A. - : Springer Science and Business Media LLC. - 0947-8396 .- 1432-0630. ; 79, s. 1613-1615
  • Journal article (peer-reviewed)abstract
    • We investigated the current–voltage characteristics of a carbon nanotube in a single electron transistor structure with alternating gate voltage. A continuous current enhancement effect with increasing frequency of the applied gate voltage up to 13 MHz is reported. Assuming that I=nef, more than 1000 electrons are driven to flow across the source–drain channel at VDS=100 mV, 13 MHz of gate voltage (Vp-p=2 V) and T=1.8 K. The continuous current enhancement is explained by the broadening effect of the discrete energy levels of the finite-length carbon nanotube.
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