| 1. |
- Kish, Laszlo B, et al.
(författare)
-
Information, Noise, and Energy Dissipation: : Laws, Limits, and Applications
- 2017
-
Ingår i: Molecular Architectonics. - Cham : Springer. - 9783319570952 ; , s. 27-44
-
Bokkapitel (refereegranskat)abstract
- This chapter addresses various subjects, including some open questions related to energy dissipation, information, and noise, that are relevant for nano- and molecular electronics. The object is to give a brief and coherent presentation of the results of a number of recent studies of ours
|
|
| 2. |
- Kish, Laszlo B., et al.
(författare)
-
Zero-point term and quantum effects in the Johnson noise of resistors : a critical appraisal
- 2016
-
Ingår i: Journal of Statistical Mechanics. - : IOP Publishing. - 1742-5468.
-
Tidskriftsartikel (refereegranskat)abstract
- There is a longstanding debate about the zero-point term in the Johnson noise voltage of a resistor. This term originates from a quantum-theoretical treatment of the fluctuation-dissipation theorem (FDT). Is the zero-point term really there, or is it only an experimental artifact, due to the uncertainty principle, for phase-sensitive amplifiers? Could it be removed by renormalization of theories? We discuss some historical measurement schemes that do not lead to the effect predicted by the FDT, and we analyse new features that emerge when the consequences of the zero-point term are measured via the mean energy and force in a capacitor shunting the resistor. If these measurements verify the existence of a zero-point term in the noise, then two types of perpetual motion machines can be constructed. Further investigation with the same approach shows that, in the quantum limit, the Johnson-Nyquist formula is also invalid under general conditions even though it is valid for a resistor-antenna system. Therefore we conclude that in a satisfactory quantum theory of the Johnson noise, the FDT must, as a minimum, include also the measurement system used to evaluate the observed quantities. Issues concerning the zero-point term may also have implications for phenomena in advanced nanotechnology.
|
|
| 3. |
- Kish, Laszlo B., et al.
(författare)
-
Zero Thermal Noise in Resistors at Zero Temperature
- 2016
-
Ingår i: Fluctuation and Noise Letters. - : World Scientific. - 0219-4775 .- 1793-6780. ; 15:3
-
Tidskriftsartikel (refereegranskat)abstract
- The bandwidth of transistors in logic devices approaches the quantum limit, where Johnsonnoise and associated error rates are supposed to be strongly enhanced. However, the related theory — asserting a temperature-independent quantum zero-point (ZP) contribution to Johnson noise, which dominates the quantum regime — is controversial and resolution of the controversy is essential to determine the real error rate and fundamental energy dissipation limits of logic gates in the quantum limit. The Callen–Welton formula (fluctuation–dissipation theorem) of voltage and current noise for a resistance is the sum of Nyquist’s classical Johnson noise equation and a quantum ZP term with a power density spectrum proportional to frequency and independent of temperature. The classical Johnson–Nyquist formula vanishes at the approach of zero temperature, but the quantum ZP term still predicts non-zero noise voltage and current. Here, we show that this noise cannot be reconciled with the Fermi–Dirac distribution, which defines the thermodynamics of electrons according to quantum-statistical physics. Consequently,Johnson noise must be nil at zero temperature, and non-zero noise found for certain experimental arrangements may be a measurement artifact, such as the one mentioned in Kleen’s uncertainty relation argument.
|
|
| 4. |
|
|
| 5. |
- Topalian, Zareh, et al.
(författare)
-
Resistance noise at the metal-insulator transition in thermochromic VO2 films
- 2015
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 117:2, s. 1-7
-
Tidskriftsartikel (refereegranskat)abstract
- Thermochromic VO2 films were prepared by reactive DC magnetron sputtering onto heated sapphire substrates and were used to make 100-nm-thick samples that were 10 lm wide and 100 lm long. The resistance of these samples changed by a factor similar to 2000 in the 50T-c. These exponents can be reconciled with the Pennetta-Trefan-Reggiani theory [Pennetta et al., Phys. Rev. Lett. 85, 5238 (2000)] for lattice percolation with switching disorder ensuing from random defect generation and healing in steady state. Our work hence highlights the dynamic features of the percolating semiconducting and metallic-like regions around T-c in thermochromic VO2 films. (C) 2015 AIP Publishing LLC.
|
|
