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Träfflista för sökning "WFRF:(Lai Zonghe 1948) "

Sökning: WFRF:(Lai Zonghe 1948)

  • Resultat 1-10 av 59
  • [1]23456Nästa
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1.
  • Dochev, Dimitar Milkov, 1981, et al. (författare)
  • Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications
  • 2011
  • Ingår i: Superconductor Science and Technology. - : IOP. - 0953-2048 .- 1361-6668. ; 24:3, s. 035016 (6pp)-
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on electrical properties and microstructure of epitaxial thin NbN films grown on 3C-SiC/Si substrates by means of reactive magnetron sputtering. A complete epitaxial growth at the NbN/3C-SiC interface has been confirmed by means of high resolution transmission electron microscopy (HRTEM) along with x-ray diffractometry (XRD). Resistivitymeasurements of the films have shown that the superconducting transition onset temperature (TC) for the best specimen is 11.8 K. Using these epitaxial NbN films, we have fabricated submicron-size hot-electron bolometer (HEB) devices on 3C-SiC/Si substrate and performed their complete DC characterization. The observed critical temperature TC = 11.3 K and critical current density of about 2.5 MA cm−2 at 4.2 K of the submicron-size bridges were uniform across the sample. This suggests that the deposited NbN films possess the necessary homogeneity to sustain reliable hot-electron bolometer device fabrication for THz mixer applications.
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2.
  • Safdar, A., et al. (författare)
  • Evaluation of microstructural development in electron beam melted Ti-6Al-4V
  • 2012
  • Ingår i: Materials Characterization. - : Elsevier. - 1044-5803 .- 1873-4189. ; 65, s. 8-15
  • Tidskriftsartikel (refereegranskat)abstract
    • In the current work an investigation of the microstructures of EBM built Ti-6Al-4V test bars has been performed using OM, SEM, TEM and XRD. It has been found that the prior beta phase, that formed during the initial solidification, possesses a column shaped morphology with growing direction parallel to built direction. Typical (alpha+beta) structures namely Widmanstatten alpha platelets with rod-like beta phase formed on the interfaces of the fine alpha grains, have been observed in the columnar prior beta grains. Grain boundary alpha phase was found to be formed around the boundaries of the columnar prior beta grains. Different phases present in the parts, especially the BCC beta phases have been characterized. The TEWEDX results indicate very high V composition in the beta phase. Results of TEWSAED and XRD also revealed that a superlattice structure could be present in the beta phase. Phase transformation sequence is discussed according to the processing history and the microstructures observed.
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3.
  • Zhao Ternehäll, Huan, 1982, et al. (författare)
  • Comparison of Optical and Structural Quality of GaIn(N)As Analog and Digital Quantum Wells Grown by Molecular Beam Epitaxy
  • 2008
  • Ingår i: Semiconductor Science and Technology. - 1361-6641 .- 0268-1242. ; 23:12, s. Art nr. 125002-
  • Tidskriftsartikel (refereegranskat)abstract
    • A set of Ga0.625In0.375(N)As single quantum well (QW) samples with the identical total amounts of Ga and In and QW thicknesses was designed and grown by both the analog and the digital methods using molecular beam epitaxy. The N exposure time in the GaInNAs samples was kept the same. The inter-band gap recombination in the analog and the digital InGaAs QWs appears in a similar transition energy range as a result of In segregation. Temperature-dependent photoluminescence (PL) measurements were performed on the GaInNAs samples. An 'S-shaped' dependence of the transition energy on temperature was observed in the digital GaInNAs QWs but not in the analog GaInNAs QW. Post-growth rapid thermal annealing had remarkably different effects on the PL intensity: an increase for the analog InGaAs QW and for the analog and digital GaInNAs QWs, but a decrease for the digital InGaAs QW with increasing annealing temperature. The GaIn(N)As samples grown by the digital method showed weaker PL intensities and smaller wavelength blue-shifts than the similar samples grown by the analog method. Possible strain relaxation mechanisms are discussed. © 2008 IOP Publishing Ltd.
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  • Andersson, Cristina, 1969, et al. (författare)
  • Low Cycle fatigue of lead-free solders
  • 2001
  • Ingår i: The Fourth International Symposium on Electronic Packaging Technology. ; , s. 462-470
  • Konferensbidrag (refereegranskat)
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  • Resultat 1-10 av 59
  • [1]23456Nästa
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Lai, Zonghe, 1948 (59)
Liu, Johan, 1960 (34)
Wang, Shu Min, 1963 (16)
Sadeghi, Mahdad, 196 ... (13)
Larsson, Anders, 195 ... (9)
Cheng, Zhaonian, 194 ... (9)
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Andersson, Cristina, ... (8)
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Chen, Liu, 1973 (4)
Sun, Peng, 1979 (3)
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Wu, D. H. (2)
Li, Shiming, 1947 (2)
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Li, S. (1)
Zhang, Y. (1)
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Yu, Yongning (1)
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Sun, Jie, 1977 (1)
Zou, Gang, 1970 (1)
Snis, Anders (1)
Wei, L-Y. (1)
Engström, Olof, 1943 (1)
Fu, Yifeng, 1984 (1)
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