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Träfflista för sökning "WFRF:(Lai Zonghe 1948) ;lar1:(liu)"

Sökning: WFRF:(Lai Zonghe 1948) > Linköpings universitet

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1.
  • Dochev, Dimitar Milkov, 1981, et al. (författare)
  • Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications
  • 2011
  • Ingår i: Superconductor Science and Technology. - : IOP Publishing. - 0953-2048 .- 1361-6668. ; 24:3, s. 035016 (6pp)-
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on electrical properties and microstructure of epitaxial thin NbN films grown on 3C-SiC/Si substrates by means of reactive magnetron sputtering. A complete epitaxial growth at the NbN/3C-SiC interface has been confirmed by means of high resolution transmission electron microscopy (HRTEM) along with x-ray diffractometry (XRD). Resistivitymeasurements of the films have shown that the superconducting transition onset temperature (TC) for the best specimen is 11.8 K. Using these epitaxial NbN films, we have fabricated submicron-size hot-electron bolometer (HEB) devices on 3C-SiC/Si substrate and performed their complete DC characterization. The observed critical temperature TC = 11.3 K and critical current density of about 2.5 MA cm−2 at 4.2 K of the submicron-size bridges were uniform across the sample. This suggests that the deposited NbN films possess the necessary homogeneity to sustain reliable hot-electron bolometer device fabrication for THz mixer applications.
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2.
  • Zhao Ternehäll, Huan, 1982, et al. (författare)
  • Comparison of optical and structural quality of GaIn(N) As analog and digital quantum wells grown by molecular beam epitaxy
  • 2008
  • Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 23:12, s. 125002-
  • Tidskriftsartikel (refereegranskat)abstract
    • A set of Ga0.625In0.375(N) As single quantum well (QW) samples with the identical total amounts of Ga and In and QW thicknesses was designed and grown by both the analog and the digital methods using molecular beam epitaxy. The N exposure time in the GaInNAs samples was kept the same. The inter-band gap recombination in the analog and the digital InGaAs QWs appears in a similar transition energy range as a result of In segregation. Temperature-dependent photoluminescence (PL) measurements were performed on the GaInNAs samples. An S-shaped dependence of the transition energy on temperature was observed in the digital GaInNAs QWs but not in the analog GaInNAs QW. Post-growth rapid thermal annealing had remarkably different effects on the PL intensity: an increase for the analog InGaAs QW and for the analog and digital GaInNAs QWs, but a decrease for the digital InGaAs QW with increasing annealing temperature. The GaIn(N) As samples grown by the digital method showed weaker PL intensities and smaller wavelength blue-shifts than the similar samples grown by the analog method. Possible strain relaxation mechanisms are discussed.
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