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- Tångring, Ivar, 1978, et al.
(författare)
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A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy
- 2009
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Ingår i: Journal of Crystal Growth. - 0022-0248. ; 311, s. 1684-
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the role of p- and n-type doping in strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy. It is found that p-type Be-doping can improve material properties, resulting in smaller surface roughness and lower threading dislocation density, while n-type Si-doping has an opposite effect. The effect is strongly dependent on the grading profile, with linear grading showing small differences, while there is a significant difference when an exponential grading is used. Since doping is essential for many types of devices, these results are useful for improving the material properties and performance of metamorphic devices.
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- Tångring, Ivar, 1978, et al.
(författare)
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Metamorphic InGaAs telecom lasers on GaAs
- 2009
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819474766 ; Proc. SPIE 7230, s. 723003-
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Konferensbidrag (refereegranskat)abstract
- We demonstrate GaAs-based metamorphic lasers in the 1.3-1.55 μm telecom range grown by molecular beam epitaxy.The introduction of dopants in a compositionally graded layer is shown to significantly influence material properties, aswell as having impact on the laser device design. Investigating and understanding of strain relaxation and dislocationdynamics is useful for improving material quality, performance and robustness of metamorphic devices. We demonstratepulsed lasing up to 1.58 μm and continuous wave lasing at 1.3 μm at room temperature with low threshold currents.
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- Wang, Shu Min, 1963, et al.
(författare)
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Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE
- 2011
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Ingår i: Physica Status Solidi (B): Basic Research. - : Wiley. - 1521-3951 .- 0370-1972. ; 248:5, s. 1207-1211
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we report recent progresses on growth of dilute nitrides and 1.3 mu m lasers on GaAs using molecular beam epitaxy at Chalmers University of Technology, Sweden. Intense long wavelength light emission up to 1.71 mu m at room temperature has been achieved by using the N irradiation method and the low growth rate. It is also demonstrated that incorporation of N in relaxed InGaAs buffer grown on GaAs strongly enhances the optical quality of metamorphic InGaAs quantum wells. With the optimized growth conditions and the laser structures, we demonstrate 1.3 mu m GaInNAs edge emitting lasers on GaAs with state-of-the-art performances including a low threshold current density, a high-characteristic temperature, a 3 dB bandwidth of 17 GHz and uncooled operation at 10 Gbit/s up to 110 degrees C. The laser performances are comparable with the best reported data from the InGaAsP lasers on InP and is superior to the InAs quantum dot lasers on GaAs.
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| 7. |
- Wang, Shu Min, 1963, et al.
(författare)
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Metamorphic InGaAs Materials and Telecom Lasers
- 2009
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Ingår i: International Conference on Materials and Advanced Technology (ICMAT) 2009, Singapore, June 28 - July 3, 2009. (invited paper).
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Konferensbidrag (refereegranskat)
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