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- Wang, Shu Min, 1963, et al.
(författare)
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Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE
- 2011
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Ingår i: Physica Status Solidi (B): Basic Research. - : Wiley. - 1521-3951 .- 0370-1972. ; 248:5, s. 1207-1211
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we report recent progresses on growth of dilute nitrides and 1.3 mu m lasers on GaAs using molecular beam epitaxy at Chalmers University of Technology, Sweden. Intense long wavelength light emission up to 1.71 mu m at room temperature has been achieved by using the N irradiation method and the low growth rate. It is also demonstrated that incorporation of N in relaxed InGaAs buffer grown on GaAs strongly enhances the optical quality of metamorphic InGaAs quantum wells. With the optimized growth conditions and the laser structures, we demonstrate 1.3 mu m GaInNAs edge emitting lasers on GaAs with state-of-the-art performances including a low threshold current density, a high-characteristic temperature, a 3 dB bandwidth of 17 GHz and uncooled operation at 10 Gbit/s up to 110 degrees C. The laser performances are comparable with the best reported data from the InGaAsP lasers on InP and is superior to the InAs quantum dot lasers on GaAs.
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- Wang, Shu Min, 1963, et al.
(författare)
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High Performance 1.3 μm GaInNAs Quantum Well Lasers on GaAs
- 2008
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819470843 ; 6909, s. 690905-
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Konferensbidrag (refereegranskat)abstract
- We present state-of-the-art performance of 1.3 μm GaInNAs lasers on GaAs grown by molecular beam epitaxy. The lowest achieved threshold current density is 297, 150 and 133 A/cm 2 per quantum well (QW) for single, double and triple QW broad area lasers with a cavity length of 1 mm. The characteristic temperature is 93-133 K in the ambient temperature range of 10-80 °C for broad area lasers depending on the cavity length, and increases to 163-208 K for ridge waveguide lasers as a result of temperature insensitive lateral carrier diffusion in QWs. The maximum 3 dB bandwidth of 17 GHz is achieved in a double QW laser. Uncooled 10 Gb/s operation up to 110 °C has been demonstrated.
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- Zhao Ternehäll, Huan, 1982, et al.
(författare)
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Comparison of optical and structural quality of GaIn(N) As analog and digital quantum wells grown by molecular beam epitaxy
- 2008
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 23:12, s. 125002-
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Tidskriftsartikel (refereegranskat)abstract
- A set of Ga0.625In0.375(N) As single quantum well (QW) samples with the identical total amounts of Ga and In and QW thicknesses was designed and grown by both the analog and the digital methods using molecular beam epitaxy. The N exposure time in the GaInNAs samples was kept the same. The inter-band gap recombination in the analog and the digital InGaAs QWs appears in a similar transition energy range as a result of In segregation. Temperature-dependent photoluminescence (PL) measurements were performed on the GaInNAs samples. An S-shaped dependence of the transition energy on temperature was observed in the digital GaInNAs QWs but not in the analog GaInNAs QW. Post-growth rapid thermal annealing had remarkably different effects on the PL intensity: an increase for the analog InGaAs QW and for the analog and digital GaInNAs QWs, but a decrease for the digital InGaAs QW with increasing annealing temperature. The GaIn(N) As samples grown by the digital method showed weaker PL intensities and smaller wavelength blue-shifts than the similar samples grown by the analog method. Possible strain relaxation mechanisms are discussed.
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