| 1. |
- Deppert, Knut, et al.
(författare)
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Epitaxielle Kristallnadeln und -bäume
- 2005
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Ingår i: Book of abstracts: DGKK-Jahrestagung, Köln, Germany (2005).
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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| 2. |
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| 3. |
- Larsson, Magnus, et al.
(författare)
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Probing of individual semiconductor nanowhiskers by TEM-STM
- 2004
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Ingår i: Microscopy and Microanalysis. - 1435-8115. ; 10:1, s. 41-46
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Tidskriftsartikel (refereegranskat)abstract
- Along with rapidly developing nanotechnology, new types of analytical instruments and techniques are needed. Here we report an alternative procedure for electrical measurements on semiconductor nanowhiskers, allowing precise selection and visual control at close to atomic resolution. We use a combination of two powerful microscope techniques, scanning tunneling microscopy (STM) and simultaneous viewing in a transmission electron microscope (TEM). The STM is mounted in the sample holder for the TEM. We describe here a method for creating an ohmic contact between the STM tip and the nanowhisker. We examine three different types of STM tips and present a technique for cleaning the STM tip in situ. Measurements on 1-mum-tall and 40-nm-thick epitaxially grown InAs nanowhiskers show an ohmic contact and a resistance of down to 7 kOmega.
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| 4. |
- Persson, Ann, et al.
(författare)
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Band-gap engineering in III-V nanowires
- 2005
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Ingår i: Book of abstracts: March Meet of the American Phys Soc, Los Angeles, CA, USA (2005).
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Konferensbidrag (refereegranskat)
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| 5. |
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| 6. |
- Persson, Ann, et al.
(författare)
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Solid-phase diffusion mechanism for GaAs nanowire growth
- 2004
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Ingår i: Nature Materials. - : Springer Science and Business Media LLC. - 1476-4660 .- 1476-1122. ; 3:10, s. 677-681
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Tidskriftsartikel (refereegranskat)abstract
- Controllable production of nanometre-sized structures is an important field of research, and synthesis of one-dimensional objects, such as nanowires, is a rapidly expanding area with numerous applications, for example, in electronics, photonics, biology and medicine. Nanoscale electronic devices created inside nanowires, such as p-n junctions(1), were reported ten years ago. More recently, hetero-structure devices with clear quantum-mechanical behaviour have been reported, for example the double-barrier resonant tunnelling diode(2) and the single-electron transistor(3). The generally accepted theory of semiconductor nanowire growth is the vapour-liquid-solid (VLS) growth mechanism(4), based on growth from a liquid metal seed particle. In this letter we suggest the existence of a growth regime quite different from VLS. We show that this new growth regime is based on a solid-phase diffusion mechanism of a single component through a gold seed particle, as shown by in situ heating experiments of GaAs nanowires in a transmission electron microscope, and supported by highly resolved chemical analysis and finite element calculations of the mass transport and composition profiles.
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| 7. |
- Samuelson, Lars, et al.
(författare)
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Semiconductor nanowires for 0D and 1D physics and applications
- 2004
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Ingår i: Physica E: Low-Dimensional Systems and Nanostructures. - : Elsevier BV. - 1386-9477. ; 25:2-3, s. 313-318
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Tidskriftsartikel (refereegranskat)abstract
- During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize. (C) 2004 Elsevier B.V. All rights reserved.
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| 8. |
- Samuelson, Lars, et al.
(författare)
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Semiconductor nanowires for novel one-dimensional devices
- 2004
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Ingår i: Physica E: Low-Dimensional Systems and Nanostructures. - : Elsevier BV. - 1386-9477. ; 21:2-4, s. 560-567
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Tidskriftsartikel (refereegranskat)abstract
- Low-dimensional semiconductors offer interesting physical phenomena but also the possibility to realize novel types of devices based on, for instance, ID structures. By using traditional top-down fabrication methods the performance of devices is often limited by the quality of the processed device structures. In many cases damage makes ultra-small devices unusable. In this work we present a recently developed method for bottom-up fabrication of epitaxially nucleated semiconductor nanowires based on metallic nanoparticle-induced formation of self-assembled nanowires. Further development of the vapor-liquid-solid growth method have made it possible to control not only the dimension and position of nanowires but also to control heterostructures formed inside the nanowires. Based on these techniques we have realized a series of transport devices such as resonant tunneling and single-electron transistors but also optically active single quantum dots positioned inside nanowires displaying sharp emission characteristics due to excitons. (C) 2003 Elsevier B.V. All rights reserved.
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| 9. |
- Thelander, Claes, et al.
(författare)
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One dimensional heterostructures and resonant tunneling in III-V nanowires
- 2003
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Ingår i: 2003 International Symposium on Compound Semiconductors (Cat. No.03TH8675). - 0780378202 ; , s. 151-152
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Konferensbidrag (refereegranskat)abstract
- We use a bottom-up approach to grow epitaxially nucleated semiconductor nanowires from gold particles. Heterostructure barriers of InP are introduced inside InAs nanowires to form resonant tunneling diodes and single-electron transistors
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| 10. |
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