| 1. |
- Nilsson, Henrik, et al.
(författare)
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Giant, level-dependent g factors in InSb nanowire quantum dots.
- 2009
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 9:9, s. 3151-3156
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Tidskriftsartikel (refereegranskat)abstract
- We report on magnetotransport measurements on InSb nanowire quantum dots. The measurements show that the quantum levels of the InSb quantum dots have giant g factors, with absolute values up to approximately 70, the largest value ever reported for semiconductor quantum dots. We also observe that the values of these g factors are quantum level dependent and can differ strongly between different quantum levels. The presence of giant g factors indicates that considerable contributions from the orbital motion of electrons are preserved in the measured InSb nanowire quantum dots, while the level-to-level fluctuations arise from spin-orbit interaction. We have deduced a value of Delta(SO) = 280 mueV for the strength of spin-orbit interaction from an avoided level crossing between the ground state and first excited state of an InSb nanowire quantum dot with a fixed number of electrons.
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| 2. |
- Björk, Mikael, et al.
(författare)
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Few-electron quantum dots in nanowires
- 2004
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 4:9, s. 1621-1625
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate transport spectroscopy on bottom-up grown few-electron quantum dots in semiconductor nanowires. The dots are defined by InP double barrier heterostructures in InAs nanowires catalytically grown from nanoparticles. By changing the dot size, we can design devices ranging from single-electron transistors to few-electron quantum dots. In the latter case, electrons can be added one by one to the dots from 0 to similar to50 electrons while maintaining an almost constant charging energy, with addition spectra of the devices displaying shell structures as a result of spin and orbital degeneracies. The reduced dimensionality of the nanowire emitter gives rise to pronounced resonant tunneling peaks, where a gate can be used to control the peak positions.
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| 3. |
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| 4. |
- Deppert, Knut, et al.
(författare)
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Epitaxielle Kristallnadeln und -bäume
- 2005
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Ingår i: Book of abstracts: DGKK-Jahrestagung, Köln, Germany (2005).
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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| 5. |
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| 6. |
- Fuhrer, Andreas, et al.
(författare)
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Transport studies on nanowire quantum dots
- 2005
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Ingår i: Book of extended abstracts: Niels Bohr Summer School, Copenhagen, Denmark (2005), invited.
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Konferensbidrag (refereegranskat)
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| 7. |
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| 8. |
- Samuelson, Lars, et al.
(författare)
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Semiconductor nanowires for 0D and 1D physics and applications
- 2004
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Ingår i: Physica E: Low-Dimensional Systems and Nanostructures. - : Elsevier BV. - 1386-9477. ; 25:2-3, s. 313-318
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Tidskriftsartikel (refereegranskat)abstract
- During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize. (C) 2004 Elsevier B.V. All rights reserved.
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| 9. |
- Samuelson, Lars, et al.
(författare)
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Semiconductor nanowires for novel one-dimensional devices
- 2004
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Ingår i: Physica E: Low-Dimensional Systems and Nanostructures. - : Elsevier BV. - 1386-9477. ; 21:2-4, s. 560-567
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Tidskriftsartikel (refereegranskat)abstract
- Low-dimensional semiconductors offer interesting physical phenomena but also the possibility to realize novel types of devices based on, for instance, ID structures. By using traditional top-down fabrication methods the performance of devices is often limited by the quality of the processed device structures. In many cases damage makes ultra-small devices unusable. In this work we present a recently developed method for bottom-up fabrication of epitaxially nucleated semiconductor nanowires based on metallic nanoparticle-induced formation of self-assembled nanowires. Further development of the vapor-liquid-solid growth method have made it possible to control not only the dimension and position of nanowires but also to control heterostructures formed inside the nanowires. Based on these techniques we have realized a series of transport devices such as resonant tunneling and single-electron transistors but also optically active single quantum dots positioned inside nanowires displaying sharp emission characteristics due to excitons. (C) 2003 Elsevier B.V. All rights reserved.
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| 10. |
- Thelander, Claes, et al.
(författare)
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Electrical properties of InAs-based nanowires
- 2004
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Ingår i: AIP Conference Proceedings. - 0094-243X .- 1551-7616. ; 723, s. 449-452
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Konferensbidrag (refereegranskat)abstract
- Semiconductor nanowires are grown using chemical beam epitaxy and metal organic vapor phase epitaxy from size-selected gold nanoparticles acting as catalysts. By changing materials during the growth it is possible to form heterostructures both along the length of the nanowires but also in a core-shell fashion. In particular, incorporation of pairs of InP tunnel barriers in InAs nanowires has been used to fabricate single-electron transistors and resonant tunneling diodes
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