| 1. |
- Gudmundsson, Valur, et al.
(författare)
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Fully Depleted UTB and Trigate N-Channel MOSFETs Featuring Low-Temperature PtSi Schottky-Barrier Contacts With Dopant Segregation
- 2009
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 30:5, s. 541-543
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Tidskriftsartikel (refereegranskat)abstract
- Schottky-barrier source/drain (SB-S/D) presents a promising solution to reducing parasitic resistance for device architectures such as fully depleted UTB, trigate, or FinFET. In this letter, a low-temperature process (<= 700 degrees C) with PtSi-based S/D is examined for the fabrication of n-type UTB and trigate FETs on SOI substrate (t(si) = 30 nm). Dopant segregation with As was used to achieve the n-type behavior at implantation doses of 1 (.) 10(15) and 5. 10(15) cm(-2). Similar results were found for UTB devices with both doses, but trigate devices with the larger dose exhibited higher on currents and smaller process variation than their lower dose counterparts.
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| 2. |
- Luo, Jun, et al.
(författare)
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Effects of Carbon on Schottky Barrier Heights of NiSi Modified by Dopant Segregation
- 2009
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Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 30:6, s. 608-610
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Tidskriftsartikel (refereegranskat)abstract
- The presence of carbon at the interface between NiSi and Si has been found to participate in the process of modification of effective Schottky barrier heights using the dopant segregation (DS) method. Carbon alone results in an increased phi(bn) from 0.7 to above 0.9 eV. Boron diffusion in NiSi is inhibited by carbon, and no B-DS at the NiSi/Si interface occurs below 600 degrees C. Above this temperature, B-DS at this interface is evident thus keeping phi(bn) high. The presence of interfacial carbon leads to an increased interfacial As concentration resulting in beneficial effects in tuning phi(bn) above 1.0 eV by As-DS.
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| 3. |
- Zhang, Zhen, et al.
(författare)
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A novel self-aligned process for platinum silicide nanowires
- 2006
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 83:11-12, s. 2107-2111
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Tidskriftsartikel (refereegranskat)abstract
- Directly accessible, ultralong, uniform platinum silicide nanowires in PtSi and Pt2Si are mass-fabricated by combining a sidewall transfer lithography (STL) technology and a self-aligned silicide process. The STL technology is based on standard Si technology. The self-aligned platinum silicide (PtSix) process consists of two sequential steps in a single run: a silicidation step in N-2 to ensure a controllable silicide formation followed by an oxidation step in O-2 to form a reliable protective SiOx layer on top of the grown PtSix. The achieved nanowires are characterised by a low resistivity: 26 +/- 3 and 34 +/- 2 mu Omega cm for the Pt2Si- and PtSi-dominated nanowires.
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| 4. |
- Zhang, Zheng, et al.
(författare)
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Electrically robust ultralong nanowires of NiSi, Ni2Si and Ni31Si12
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 88:4, s. 043104-
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Tidskriftsartikel (refereegranskat)abstract
- Mass fabrication of directly accessible, ultralong, uniform Si nanowires is realized by employing a controllable and reproducible method based on standard Si technology. High-conductivity polycrystalline Ni-silicide nanowires around 30 nm by 30 nm in cross section, able to support extremely high currents at similar to 10(8) A/cm(2), are obtained by means of solid-state reaction of the Si nanowires with subsequently deposited Ni films. By properly adjusting the Ni film thickness, NiSi, Ni2Si, and Ni31Si12 nanowires characterized with distinct resistivity and temperature coefficient of resistance are obtained. Upon annealing, the electrical continuity of the nanowires breaks at temperatures about 0.7 times the melting points of the silicides.
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| 5. |
- Zhang, Zhen, et al.
(författare)
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Ni2Si nanowires of extraordinarily low resistivity
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 88:21, s. 213103-
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Tidskriftsartikel (refereegranskat)abstract
- Ultralong, polycrystalline Ni2Si nanowires are fabricated by combining sidewall transfer lithography with self-aligned silicidation. Upon formation at 500 degrees C, the nanowires that are 400 mu m long with a rectangular cross section of 37.5 by 25.3 nm are characterized by a resistivity of 25 +/- 1 mu Omega cm which is similar to the value for Ni2Si thin films. Further annealing at 800 degrees C results in an extraordinarily low wire resistivity of 10 mu Omega cm. Such a drastic decrease in resistivity is attributed to a significant grain growth and a low density of defects in the nanowires.
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| 6. |
- Zhang, Zhen, et al.
(författare)
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Performance fluctuation of FinFETs with Schottky barrier source/drain
- 2008
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 29:5, s. 506-508
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Tidskriftsartikel (refereegranskat)abstract
- A considerable performance fluctuation of FinFETs featuring PtSi-based Schottky barrier source/drain is found. The Fin-channels measure 27-nm tall and 35-nm wide. Investigation of similarly processed transistors of broad gate-widths reveals a large variation in the position of the PtSi/Si interface with reference to the gate edge along the gate width. This variation suggests an uneven underlap between the PtSi and the gate from device to device for the FinFETs, since essentially only one silicide grain would be in contact with each Fin-channel at the PtSi/Si interface. The size of the underlap is expected to sensitively affect the performance of the FinFETs.
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