| 1. |
- Luo, Jun, et al.
(författare)
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Thermal Stability and Dopant Segregation for Schottky Diodes With Ultrathin Epitaxial NiSi(2-y)
- 2011
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Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 32:8, s. 1029-1031
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Tidskriftsartikel (refereegranskat)abstract
- The Schottky barrier height (SBH) of an ultrathin epitaxial NiSi(2-y) film grown on Si(100) is modified significantly by means of dopant segregation (DS). The DS process begins with the NiSi(2-y) formation and is followed by dopant implantation and drive-in annealing. The rapid lattice restoration and superior morphological stability upon heat treatment up to 800 degrees C allow the epitaxial NiSi(2-y) film to take full advantage of the DS process. For drive-in annealing below 750 degrees C, the effective SBH is altered to similar to 0.9-1 eV for both electrons and holes by B-DS and As-DS, respectively, without deteriorating the integrity of the NiSi(2-y) film.
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| 2. |
- Liu, Zhiying, et al.
(författare)
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On Gate Capacitance of Nanotube Networks
- 2011
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Ingår i: IEEE Electron Device Letters. - : IEEE. - 0741-3106 .- 1558-0563. ; 32:5, s. 641-643
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Tidskriftsartikel (refereegranskat)abstract
- This letter presents a systematic investigation of the gate capacitance C-G of thin-film transistors (TFTs) based on randomly distributed single-walled carbon nanotubes (SWCNTs) in the channel. In order to reduce false counting of SWCNTs that do not contribute to current conduction, C-G is directly measured on the TFTs using a well-established method for MOSFETs. Frequency dispersion of C-G is observed, and it is found to depend on the percolation behavior in SWCNT networks. This dependence can be accounted for using an RC transmission line model. These results are of important implications for the determination of carrier mobility in nanoparticle-based TFTs.
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| 3. |
- Luo, Jun, et al.
(författare)
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Effects of carbon pre-silicidation implant into Si substrate on NiSi
- 2014
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 120, s. 178-181
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Tidskriftsartikel (refereegranskat)abstract
- In this work, the effects of carbon pre-silicidation implant into Si(1 0 0) substrate on NiSi were investigated. NiSi films with carbon pre-silicidation implant to different doses were characterized by means of sheet resistance measurements, X-ray diffraction, scanning electron microscopy (SEM), planar view transmission electron microscopy (TEM) and second ion mass spectroscopy (SIMS). The presence of C is found to indeed significantly improve the thermal stability of NiSi as well as tends to change the preferred orientations of polycrystalline NiSi. The homogeneously distributed C at NiSi grain boundaries and C peak at NiSi/Si interface is ascribed to the improved thermal stability of NiSi. More importantly, the dose of carbon pre-silicidation implant also plays a key role in the formation of NiSi, which is suggested not to exceed a critical value about 5 x 10(15) cm(-2) in practical application in accordance with the results achieved in this work. (C) 2013 Elsevier B.V. All rights reserved.
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| 4. |
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| 5. |
- Luo, Jun, et al.
(författare)
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Variation of Schottky barrier height induced by dopant segregation monitored by contact resistivity measurements
- 2014
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 120, s. 174-177
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Tidskriftsartikel (refereegranskat)abstract
- Change of contact resistivity (rho(c)) is monitored for evaluation of Schottky barrier height (SBH) variation induced by dopant segregation (DS). This method is particularly advantageous for metal-semiconductor contacts of small SBH, as it neither requires low-temperature measurement needed in current-voltage characterization of Schottky diodes nor is affected by reverse leakage current often troubling capacitance-voltage characterization. With PtSi contact to both n- and p-type diffusion regions, and the use of opposite or alike dopants implant into pre-formed PtSi films followed by drive-in anneal at different temperatures to induce DS at PtSi/Si interface, the formation of interfacial dipole is confirmed as the responsible cause for modification of effective SBHs thus the increase or decrease of rho(c). A tentative explanation for the change of contact resistivity based on interfacial dipole theory is provided in this work. Influences and interplay of interfacial dipole and space charge on effective SBH are also discussed. (C) 2013 Elsevier B.V. All rights reserved.
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| 6. |
- Qu, Minni, et al.
(författare)
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Charge-Injection-Induced Time Decay in Carbon Nanotube Network-Based FETs
- 2010
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 31:10, s. 1098-1100
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Tidskriftsartikel (refereegranskat)abstract
- A voltage-pulse method is utilized to investigate the charge-injection-induced time decay of the source-drain current of field-effect transistors with randomly networked single-walled carbon nanotubes (CNTs) as the conduction channel. The relaxation of trapped carriers in the CNT networks can be accounted for by assuming two exponential decays occurring simultaneously. The slow decay is characterized by a time constant comparable to literature data obtained for a carrier recombination in the semiconducting CNTs. The faster decay with a time constant that has a smaller order of magnitude is attributed to the annihilation of trapped carriers in metallic CNTs or at metal-CNT contacts. Both time constants are gate-bias dependent.
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| 7. |
- Gudmundsson, Valur, et al.
(författare)
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Fully Depleted UTB and Trigate N-Channel MOSFETs Featuring Low-Temperature PtSi Schottky-Barrier Contacts With Dopant Segregation
- 2009
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 30:5, s. 541-543
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Tidskriftsartikel (refereegranskat)abstract
- Schottky-barrier source/drain (SB-S/D) presents a promising solution to reducing parasitic resistance for device architectures such as fully depleted UTB, trigate, or FinFET. In this letter, a low-temperature process (<= 700 degrees C) with PtSi-based S/D is examined for the fabrication of n-type UTB and trigate FETs on SOI substrate (t(si) = 30 nm). Dopant segregation with As was used to achieve the n-type behavior at implantation doses of 1 (.) 10(15) and 5. 10(15) cm(-2). Similar results were found for UTB devices with both doses, but trigate devices with the larger dose exhibited higher on currents and smaller process variation than their lower dose counterparts.
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| 8. |
- Li, Chen, et al.
(författare)
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Rapid Four-Point Sweeping Method to Investigate Hysteresis of MoS2 FET
- 2020
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Ingår i: IEEE Electron Device Letters. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 0741-3106 .- 1558-0563. ; 41:9, s. 1356-1359
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Tidskriftsartikel (refereegranskat)abstract
- Hysteresis is a frequently observed phenomenon in the transfer characteristics of thin film transistors. Charge trapping/de-trapping processes of gate oxide and gate-channel interface are commonly known to be the origin of hysteresis and correlated to low frequency noise (LFN) properties of the devices. In this letter, a rapid four-point sweeping method (RFSM) is proposed to reveal the dependence of hysteresis, as well as the distribution of effective trap density on sweeping rate and gate bias range. Based on the RFSM, the hysteresis properties of four-layer MoS2 FETs are studied in detail. The experimental results demonstrate that the hysteresis and trap density at different frequencies and gate voltages, which could further roughly map the traps with different time constants and energy depths, can be obtained by the simple RFSM. Trap density estimated by RFSM shows a comparable range with that extracted from LFN, indicating that the traps inducing the hysteresis may also cause LFN.
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| 9. |
- Li, Hui, et al.
(författare)
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Accelerating Gas Adsorption on 3D Percolating Carbon Nanotubes
- 2016
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322. ; 6
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Tidskriftsartikel (refereegranskat)abstract
- In the field of electronic gas sensing, low-dimensional semiconductors such as single-walled carbon nanotubes (SWCNTs) can offer high detection sensitivity owing to their unprecedentedly large surface-to-volume ratio. The sensitivity and responsivity can further improve by increasing their areal density. Here, an accelerated gas adsorption is demonstrated by exploiting volumetric effects via dispersion of SWCNTs into a percolating three-dimensional (3D) network in a semiconducting polymer. The resultant semiconducting composite film is evaluated as a sensing membrane in field effect transistor (FET) sensors. In order to attain reproducible characteristics of the FET sensors, a pulsed-gate-bias measurement technique is adopted to eliminate current hysteresis and drift of sensing baseline. The rate of gas adsorption follows the Langmuir-type isotherm as a function of gas concentration and scales with film thickness. This rate is up to 5 times higher in the composite than only with an SWCNT network in the transistor channel, which in turn results in a 7-fold shorter time constant of adsorption with the composite. The description of gas adsorption developed in the present work is generic for all semiconductors and the demonstrated composite with 3D percolating SWCNTs dispersed in functional polymer represents a promising new type of material for advanced gas sensors.
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| 10. |
- Li, Hui, et al.
(författare)
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Trion-induced current anomaly in organic polymer
- 2016
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Ingår i: Organic electronics. - : Elsevier BV. - 1566-1199 .- 1878-5530. ; 34, s. 124-129
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Tidskriftsartikel (refereegranskat)abstract
- In this report, an anomalous time-evolution of electrical current in organic thin-film transistors, OTFTs, isrevealed by employing a specially tailored semiconductor composite channel. The composite is designedby controlling the density of carbon nanotubes dispersed in a host semiconducting polymer belowelectrical percolation. The current anomaly, which, to the best of our knowledge, has never beenobserved before, is directly correlated to strong many-body interactions instantaneously occurring in thesystem under investigation. In essence, two on-chain positively charged polarons are fused with anelectrochemically generated negative hydroxyl ion, OH, in the H2O/O2redox reaction to form a trion.The trion, which is characteristic of the polymer, is intrinsically metastable and can dissociate to mobilepolarons under the influence of electricfield, temperature and/or light illumination. The rate of trionformation is almost three orders of magnitude higher than that of trion dissociation. The fast formationand slow dissociation of the trions is the cause responsible for the observed current anomaly. Themetastable trion is, hence, of fundamental importance in the operation of OTFTs. Understanding thefundamentals pertaining to the anomalous phenomenon not only is crucial for design of more efficientdevices but also can guide development of future, emerging applications of OTFTs.
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