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- Shang, X. -J, et al.
(författare)
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Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells
- 2011
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Ingår i: Applied Physics Letters. - New York, N.Y. : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 99:11, s. 113514-113514-3
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Tidskriftsartikel (refereegranskat)abstract
- Photocurrents (PCs) of three p–i–n GaAs solar cells, sample A with InAs quantum dots (QDs) embedded in the depletion region, B with QDs in the n region, and C without QDs, were studied experimentally and theoretically. Above GaAs bandgap, the PC of A is increased, while B is decreased with respect to C, since in A, the QD-induced reflection of hole wave function increases its overlap with electron wave function so that the optical transition rate is enhanced, while carrier mobility in B is reduced due to QD-induced potential variations. Moreover, A and B have increased PCs in the sub-GaAs-bandgap range due to QD optical absorptions.
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