| 1. |
- Luo, Jun, et al.
(författare)
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Effects of carbon pre-silicidation implant into Si substrate on NiSi
- 2014
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 120, s. 178-181
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Tidskriftsartikel (refereegranskat)abstract
- In this work, the effects of carbon pre-silicidation implant into Si(1 0 0) substrate on NiSi were investigated. NiSi films with carbon pre-silicidation implant to different doses were characterized by means of sheet resistance measurements, X-ray diffraction, scanning electron microscopy (SEM), planar view transmission electron microscopy (TEM) and second ion mass spectroscopy (SIMS). The presence of C is found to indeed significantly improve the thermal stability of NiSi as well as tends to change the preferred orientations of polycrystalline NiSi. The homogeneously distributed C at NiSi grain boundaries and C peak at NiSi/Si interface is ascribed to the improved thermal stability of NiSi. More importantly, the dose of carbon pre-silicidation implant also plays a key role in the formation of NiSi, which is suggested not to exceed a critical value about 5 x 10(15) cm(-2) in practical application in accordance with the results achieved in this work. (C) 2013 Elsevier B.V. All rights reserved.
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| 2. |
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| 3. |
- Luo, Jun, et al.
(författare)
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Thermal Stability and Dopant Segregation for Schottky Diodes With Ultrathin Epitaxial NiSi(2-y)
- 2011
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Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 32:8, s. 1029-1031
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Tidskriftsartikel (refereegranskat)abstract
- The Schottky barrier height (SBH) of an ultrathin epitaxial NiSi(2-y) film grown on Si(100) is modified significantly by means of dopant segregation (DS). The DS process begins with the NiSi(2-y) formation and is followed by dopant implantation and drive-in annealing. The rapid lattice restoration and superior morphological stability upon heat treatment up to 800 degrees C allow the epitaxial NiSi(2-y) film to take full advantage of the DS process. For drive-in annealing below 750 degrees C, the effective SBH is altered to similar to 0.9-1 eV for both electrons and holes by B-DS and As-DS, respectively, without deteriorating the integrity of the NiSi(2-y) film.
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| 4. |
- Luo, Jun, et al.
(författare)
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Variation of Schottky barrier height induced by dopant segregation monitored by contact resistivity measurements
- 2014
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 120, s. 174-177
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Tidskriftsartikel (refereegranskat)abstract
- Change of contact resistivity (rho(c)) is monitored for evaluation of Schottky barrier height (SBH) variation induced by dopant segregation (DS). This method is particularly advantageous for metal-semiconductor contacts of small SBH, as it neither requires low-temperature measurement needed in current-voltage characterization of Schottky diodes nor is affected by reverse leakage current often troubling capacitance-voltage characterization. With PtSi contact to both n- and p-type diffusion regions, and the use of opposite or alike dopants implant into pre-formed PtSi films followed by drive-in anneal at different temperatures to induce DS at PtSi/Si interface, the formation of interfacial dipole is confirmed as the responsible cause for modification of effective SBHs thus the increase or decrease of rho(c). A tentative explanation for the change of contact resistivity based on interfacial dipole theory is provided in this work. Influences and interplay of interfacial dipole and space charge on effective SBH are also discussed. (C) 2013 Elsevier B.V. All rights reserved.
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| 5. |
- Xu, Peng, et al.
(författare)
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Ultra-shallow junctions formed using microwave annealing
- 2013
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 102:12, s. 122114-
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Tidskriftsartikel (refereegranskat)abstract
- Microwave annealing is shown to be viable for achieving low thermal budget formation of ultra-shallow junctions. Regrowth of a 10 nm thick amorphous Si layer that is generated during a Ge amorphization process prior to BF2 or As dopant implantation proceeds at rates up to 0.53 nm/min for BF2 and up to 0.33 nm/min for As at 370 degrees C. The fraction of electrical activation for implanted dopants is as high as 13% for BF2 and 32% for As with negligible diffusion at 540 degrees C.
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