| 1. |
- Wernersson, Lars-Erik, et al.
(författare)
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Attractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor
- 2002
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Ingår i: Institute of Physics Conference Series. - 0951-3248. ; 170, s. 81-85
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Tidskriftsartikel (refereegranskat)abstract
- We report on the formation of an attractive potential around buried metal wires in a novel design for the Hot Electron Transistor (HET). In this device, the doped base layer in the HET is replaced by an embedded metal grating, which is forward biased beyond flat band conditions in order to efficiently extract carriers from the emitter into the active region. These carriers are collected in a Schottky Collector contact. By tuning the gate and collector voltages, the potential profile around the wires can be repulsive as well as attractive. This is a key result for the realisation of a Biprism device.
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| 2. |
- Lind, Erik, et al.
(författare)
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A resonant tunneling permeable base transistor with Al-free tunneling barriers
- 2002
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Ingår i: Device Research Conference (Cat. No.02TH8606). - 0780373170 ; , s. 155-156
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Konferensbidrag (refereegranskat)abstract
- Summary form only given. Resonant tunneling based devices are an intriguing set of devices with promising high speed, low power and high functionality capabilities. We have developed an technology to embed metallic features on the nm-scale inside a semiconductor. By combining such metallic features and heterostructures we have developed a new type of tunneling transistor, the so called Resonant Tunneling Permeable Base Transistor (RT-PBT), where a double barrier heterostructure is placed in close vicinity to a metal grating. A three step fabrication process is described
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| 3. |
- Lind, Erik, et al.
(författare)
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Stacking of heterostructures and metallic elements for a submicron resonant tunneling transistor
- 2002
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Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
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Konferensbidrag (refereegranskat)abstract
- We have successfully embedded a metal gate in-between two resonant tunneling double barrier heterostructures (RTD), thus realizing a three dimensional resonant tunneling transistor. The gate is placed 30 nm above and 100 below the two RTD's, respectively. The asymmetric gate allows for a unique control of the current-voltage characteristics, not only controlling the peak current but also the peak voltage. We have modeled the transistor with Cadence, a standard simulation package for circuit simulations, achieving good agreement with experimental data
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| 4. |
- Lind, Erik, et al.
(författare)
-
Tunneling spectroscopy of a quantum dot through a single impurity
- 2003
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Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 68:3, s. 4-4
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Tidskriftsartikel (refereegranskat)abstract
- A single impurity inside a resonant tunneling diode is used to perform tunneling spectroscopy on an adjacent electrostatically defined vertical quantum dot. This results in tunneling between two zero-dimensional systems, measured as a set of sharp peaks in the current-voltage spectrum for finite bias. Magnetic-field-dependent measurements show that the angular momentum of the tunneling electrons is conserved during the tunneling process. Both ground and excited states are probed. The effect of temperature is also investigated, exhibiting a peak broadening that is smaller than 1 kT.
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