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- Arking, D. E., et al.
(författare)
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Genetic association study of QT interval highlights role for calcium signaling pathways in myocardial repolarization
- 2014
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Ingår i: Nature Genetics. - : Nature Publishing Group. - 1061-4036 .- 1546-1718. ; 46:8, s. 826-836
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Tidskriftsartikel (refereegranskat)abstract
- The QT interval, an electrocardiographic measure reflecting myocardial repolarization, is a heritable trait. QT prolongation is a risk factor for ventricular arrhythmias and sudden cardiac death (SCD) and could indicate the presence of the potentially lethal mendelian long-QT syndrome (LQTS). Using a genome-wide association and replication study in up to 100,000 individuals, we identified 35 common variant loci associated with QT interval that collectively explain ∼ 8-10% of QT-interval variation and highlight the importance of calcium regulation in myocardial repolarization. Rare variant analysis of 6 new QT interval-associated loci in 298 unrelated probands with LQTS identified coding variants not found in controls but of uncertain causality and therefore requiring validation. Several newly identified loci encode proteins that physically interact with other recognized repolarization proteins. Our integration of common variant association, expression and orthogonal protein-protein interaction screens provides new insights into cardiac electrophysiology and identifies new candidate genes for ventricular arrhythmias, LQTS and SCD. © 2014 Nature America, Inc.
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- Do, Ron, et al.
(författare)
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Common variants associated with plasma triglycerides and risk for coronary artery disease
- 2013
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Ingår i: Nature Genetics. - : Springer Science and Business Media LLC. - 1061-4036 .- 1546-1718. ; 45:11, s. 1345-
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Tidskriftsartikel (refereegranskat)abstract
- Triglycerides are transported in plasma by specific triglyceride-rich lipoproteins; in epidemiological studies, increased triglyceride levels correlate with higher risk for coronary artery disease (CAD). However, it is unclear whether this association reflects causal processes. We used 185 common variants recently mapped for plasma lipids (P < 5 x 10(-8) for each) to examine the role of triglycerides in risk for CAD. First, we highlight loci associated with both low-density lipoprotein cholesterol (LDL-C) and triglyceride levels, and we show that the direction and magnitude of the associations with both traits are factors in determining CAD risk. Second, we consider loci with only a strong association with triglycerides and show that these loci are also associated with CAD. Finally, in a model accounting for effects on LDL-C and/or high-density lipoprotein cholesterol (HDL-C) levels, the strength of a polymorphism's effect on triglyceride levels is correlated with the magnitude of its effect on CAD risk. These results suggest that triglyceride-rich lipoproteins causally influence risk for CAD.
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- Egard, Mikael, et al.
(författare)
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Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
- 2013
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Ingår i: 2013 International Conference on Indium Phosphide and Related Materials (IPRM). - 1092-8669. ; , s. 1-2
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Konferensbidrag (refereegranskat)abstract
- Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/mu m) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate the center frequency of the wavelets.
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- Egard, Mikael, et al.
(författare)
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High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- 2012
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 33:3, s. 369-371
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Tidskriftsartikel (refereegranskat)abstract
- We have developed a self-aligned L-g = 55 nm In-0.53 Ga-0.47 As MOSFET incorporating metal-organic chemical vapor deposition regrown n(++) In0.6Ga0.4As source and drain regions, which enables a record low on-resistance of 199 Omega mu m. The regrowth process includes an InP support layer, which is later removed selectively to the n(++) contact layer. This process forms a high-frequency compatible device using a low-complexity fabrication scheme. We report on high-frequency measurements showing f(max) of 292 GHz and f(t) of 244 GHz. These results are accompanied by modeling of the device, which accounts for the frequency response of gate oxide border traps and impact ionization phenomenon found in narrow band gap FETs. The device also shows a high drive current of 2.0 mA/mu m and a high extrinsic transconductance of 1.9 mS/mu m. These excellent properties are attributed to the use of a gate-last process, which does not include high temperature or dry-etch processes.
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- Egard, Mikael, et al.
(författare)
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High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- 2011
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Ingår i: 2011 IEEE International Electron Devices Meeting (IEDM). - 9781457705052
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Konferensbidrag (refereegranskat)abstract
- In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/mu m and on-resistance of 199 Omega mu m. T he self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.
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- Egard, Mikael, et al.
(författare)
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In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
- 2012
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 33:7, s. 970-972
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Tidskriftsartikel (refereegranskat)abstract
- We report on the fabrication of a self-aligned regrown In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling diode (RTD). The performance of these devices is demonstrated by integrating them in parallel with an inductive coplanar waveguide stub to form a highly energy-efficient 70-GHz wavelet generator. The fast switching and low on-resistance of the MOSFET make it possible to kick-start and rapidly quench this RTD-driven oscillator circuit, which produces 41-ps-short wavelets at 15 Gpulses/s, a peak output power of 7 dBm, and an energy consumption of 1.9 pJ/pulse.
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