1. |
- Strand, Robin, 1978-, et al.
(författare)
-
Holistic whole-body MRI image analysis
- 2016
-
Ingår i: Symposium of the Swedish Society for Automated Image Analysis, Uppsala, Sweden, (SSBA).
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)
|
|
2. |
- Berg, Martin, et al.
(författare)
-
Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
- 2016
-
Ingår i: Technical Digest - International Electron Devices Meeting, IEDM. - 9781467398930 ; 2016-February
-
Konferensbidrag (refereegranskat)abstract
- In this work, we present a novel self-aligned gate-last fabrication process for vertical nanowire metal-oxide-semiconductor field-effect transistors. The fabrication method allows for exposure dose-defined gate lengths and a local diameter reduction of the intrinsic channel segment, while maintaining thicker highly doped access regions. Using this process, InAs nanowire transistors combining good on-and off-performance are fabricated demonstrating Q = gm,max/SS = 8.2, which is higher than any previously reported vertical nanowire MOSFET.
|
|
3. |
- Loutfi, Amy, 1978-, et al.
(författare)
-
Ecare@home : A distributed research environment on semantic interoperability
- 2016
-
Ingår i: Lect. Notes Inst. Comput. Sci. Soc. Informatics Telecommun. Eng.. - Cham : Springer International Publishing. - 9783319512334 - 9783319512341 ; , s. 3-8
-
Konferensbidrag (refereegranskat)abstract
- This paper presents the motivation and challenges to developing semantic interoperability for an internet of things network that is used in the context of home based care. The paper describes a research environment which examines these challenges and illustrates the motivation through a scenario whereby a network of devices in the home is used to provide high-level information about elderly patients by leveraging from techniques in context awareness, automated reasoning, and configuration planning.
|
|
4. |
- Zota, Cezar B., et al.
(författare)
-
InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v
- 2016
-
Ingår i: 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. - 9781509006373
-
Konferensbidrag (refereegranskat)abstract
- We report on In0.85Ga0.15As nanowire MOSFETs (NWFETs) with record performance in several key VLSI metrics. These devices exhibit ION = 555 μA/μm (at IOFF = 100 nA/μm and VDD = 0.5 V), ION = 365 μA/μm (at IOFF = 10 nA/μm and VDD = 0.5 V) and a quality factor Q = gm/SS of 40, all of which are the highest reported for a III-V as well as silicon transistor. Furthermore, a highly scalable, self-Aligned gate-last fabrication process is utilized, with a single nanowire as the channel. The devices use a 45° angle between the nanowire and the contacts, which allows for up to a 1.4 times longer gate length at a given pitch.
|
|
5. |
|
|