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- Appleton, Jason Philip, et al.
(författare)
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The TOS2 study: An international multi-centre audit assessing the standard of neurological examination
- 2015
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Ingår i: Journal of Neurology, Neurosurgery and Psychiatry. - : BMJ. - 1468-330X .- 0022-3050. ; 86:11
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Konferensbidrag (refereegranskat)abstract
- Having previously demonstrated that in-patients referred to neurology at two UK hospitals were not fully examined prior to referral, we designed an audit with 80% power to detect a 10% increase in tendon hammer or ophthalmoscope use following an educational intervention. In-patients referred to neurology over a 4 month period in the UK, Jordan, Sweden and the United Arab Emirates were asked whether they recalled examination with a Tendon hammer, Ophthalmoscope and Stethoscope since admission. Results were disseminated to local medical teams and data were collected for a further 4 months. Pre and post-intervention data were available for 11 centres with 407 and 391 patients in each arm. 264 patients (64.86%) recalled examination with a tendon hammer preintervention, which significantly improved to 298 (76.21%) (p
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- Domeij, Martin, et al.
(författare)
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2.2 kV SiC BJTs with low V(CESAT) fast switching and short-circuit capability
- 2010
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2. ; , s. 1033-1036
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Konferensbidrag (refereegranskat)abstract
- This paper reports large active area (15 mm(2)) 4H-SiC BJTS with a low V(CESAT)=0.6 V at 1(C)=20 A (J(C)=133 A/cm(2)) and an open-base breakdown voltage BV(CEO)=2.3 kV at T=25 degrees C. The corresponding room temperature specific on-resistance R(SP.ON)=4.5 m Omega cm(2) is to the authors knowledge the lowest reported value for a large area SiC BJT blocking more than 2 kV. The onstate and blocking characteristics were analyzed by device simulation and found to be in good agreement with measurements. Fast switching with VcE rise- and fall-times in the range of 20-30 ns was demonstrated for a 6 A 1200 V rated SiC BJT. It was concluded that high dynamic base currents are essential for fast switching to charge the BJT parasitic base-collector capacitance. In addition, 10 mu s short-circuit capability with V(CE)=800 V was shown for the 1200 V BJT.
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- Glimsdal, E., et al.
(författare)
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Two-photon absorption cross-section and triplet states of dendritic Pt-acetylides for OPL applications
- 2005
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE - The International Society for Optical Engineering.
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Konferensbidrag (refereegranskat)abstract
- The photo-physical properties of bis((4-(phenylethynyl)phenyl)ethynyl) bis(tributylphosphine) platinum(II) with 2,2-bis(methylol)propionic acid (bis-MPA) dendritic substituents were studied. The introduction of dendrimer capping was found to give rise to protection from oxygen quenching of phosphorescent states with a considerably longer decay time of the phosphorescence (0.1 -0.4 ms range) for solvents with oxygen removed or dendrimers of larger size (G2-G4) or higher concentration. Presence of oxygen reduces the phosphorescence decay time to below 1 microsecond. Two-photon induced fluorescence and z-scan of fs pulses at low pulse repetition frequency at approximately 720 nm revealed that the two-photon absorption cross-section is in the order of 0.01 cm/GW, well below the 0.34cm/GW reported by Staromlynska et al [J. Staromlynska, T. McKay and P. Wilson, J. Appl. Phys. 88, 1726 (2000)] and similar for all dendrimer complexes as well as the non-capped Pt-acetylide. Z-scans performed at high pulse repetition frequency gives an apparent two-photon absorption cross-section that is higher due to the population of excited triplet states, and the contribution from incoherent multiphoton absorption involving the triplet states.
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