| 1. |
- Bao, Jie, et al.
(författare)
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Synthesis and Applications of Two-Dimensional Hexagonal Boron Nitride in Electronics Manufacturing
- 2016
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Ingår i: Electronic Materials Letters. - : Springer Science and Business Media LLC. - 1738-8090 .- 2093-6788. ; 12:1, s. 1-16
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Forskningsöversikt (refereegranskat)abstract
- In similarity to graphene, two-dimensional (2D) hexagonal boron nitride (hBN) has some remarkable properties, such as mechanical robustness and high thermal conductivity. In addition, hBN has superb chemical stability and it is electrically insulating. 2D hBN has been considered a promising material for many applications in electronics, including 2D hBN based substrates, gate dielectrics for graphene transistors and interconnects, and electronic packaging insulators. This paper reviews the synthesis, transfer and fabrication of 2D hBN films, hBN based composites and hBN-based van der Waals heterostructures. In particular, this review focuses on applications in manufacturing electronic devices where the insulating and thermal properties of hBN can potentially be exploited. 2D hBN and related composite systems are emerging as new and industrially important materials, which could address many challenges in future complex electronics devices and systems.
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| 2. |
- Duan, Y., et al.
(författare)
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A New Thermally Conductive Thermoplastic Die Attach Film
- 2012
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Ingår i: Proceedings of IEEE CPMT 2012 International Conference on Electronic Packaging Technology & High Density Packaging. - 9781467316804 ; , s. 212-215
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Konferensbidrag (refereegranskat)abstract
- As devices with smaller footprint and, higher functionality become the norm, stacked die technology will be required to enable the advancement of modern integrated packaging. As wafers become ever thinner to meet stacking requirements, new materials technology must address the challenges of handling and processing wafer thicknesses of less than 100 microns. Die attach film (DAF) has being widely used as an alternative. With its good control of bleed, consistent bond line thickness and simplified operation. In this paper, a kind of thermoplastic film with good thermal conductivity was developed for die attachment application and some of its properties, such as shear strength and, thermal conductivity were investigated. In the present work, the formula of the DAF matrix has been determined and in order to improve thermal conductivity of DAF, silicon carbide (SiC) particles with high thermal conductivity were selected to add as filler and in the content of SiC particles on the property of the DAFs were also investigated. Shear tests were conducted to measure the bonding strength of the DAFs. The results show that the films reached a 6.5 MPa in terms of average shear strength and after plasticizing it could reach 3.5 MPa. The thermal conductivity of the DAFs was 0.37W/ m·K.
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| 3. |
- han, Hao xue, et al.
(författare)
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Enhanced Heat Spreader Based on Few-Layer Graphene Intercalated With Silane-Functionalization Molecules
- 2014
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Ingår i: IEEE 20th International Workshop on Thermal Investigation of ICs and Systems (Therminic). Greenwich, London, United Kingdom, 24-26 September 2014. - 9781479954155 ; , s. 1-4
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Konferensbidrag (refereegranskat)abstract
- We studied the heat-spreading enhancement of supported few-layer graphene by inserting silane-functionalization molecules between graphene sheets. We calculated the overall thermal resistance of graphene-substrate interface and the in-plane thermal conductivity of graphene sheets by equilibrium molecular dynamics simulations. We probed the spectral phonon transmission coefficient by non-equilibrium Green's function to characterize the local heat conduction through the interface. Our results show that the overal thermal resistance between the substrate graphene and the upper two-layer graphene underwent a three-fold increase by the presence of the molecules, while the local heat conduction from the hot spot to the graphene sheets through the molecules was largely intensified. Furthermore, the in-plane thermal conductivity of the few-layer graphene increased by 60% compared with the supported graphene non-bonded to the substrate through the molecules. This increase is attributed to the refrained cross-plane phonon scattering which in turn reinforces the in-plane heat conduction of the few-layer graphene. In summary, we proved that by inserting silane-functionalization molecules, the few-layer graphene becomes an ideal candidate for heat spreading by guiding heat more efficiently away from the heat source.
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| 4. |
- Jeppson, Kjell, 1947, et al.
(författare)
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Through-Silicon Vias Filled With Densified and Transferred Carbon Nanotube Forests
- 2012
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 33:3, s. 420-422
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Tidskriftsartikel (refereegranskat)abstract
- Through-silicon vias (TSVs) filled with densified and transferred carbon nanotube (CNT) forests are experimentally demonstrated. The filling is achieved by a postgrowth low-temperature transfer process at 200oC instead of direct CNT growth in the vias normally requiring high temperature. A vapor densification method is also applied to densify the as-grown CNT forests, which allows for packing more CNTs in the vias to reduce their resistances. CNT-filled TSVs fabricated based on these two key steps show CMOS compatibility and roughly one order of magnitude reduction in resistivity compared to the TSVs filled with as-grown undensified CNT forests.
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| 5. |
- Jiang, Di, 1983, et al.
(författare)
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Carbon Nanotubes in Electronics Interconnect Applications with a Focus on 3D-TSV Technology
- 2012
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Ingår i: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. - 9781607683186 ; 44:1, s. 683-692
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Konferensbidrag (refereegranskat)abstract
- High density electronics integration at the system level, supported by advanced packaging solutions, is expected to be the main driving force for the future shrinking of electronics. One recent focus in the field of electronics packaging is the use of through-silicon-via (TSV) to form three-dimensional (3D) integration. A central task in developing 3D-TSV integration is to build reliable and efficient electrical interconnects for signal transfer and power distribution among the stacked layers. Carbon nanotubes (CNTs) are supposed to be a promising material to build future interconnects due to their many attractive electrical and mechanical properties. This paper reviews the state-of-art in CNT integration technology, with a focus on the 3D-TSV interconnect. The simplicity and manufacturability of fabricating and stacking CNT TSVs presented in this paper indicate a great application potential of CNTs as an interconnection material in future 3D integrated electronics.
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| 6. |
- Jiang, Di, 1983, et al.
(författare)
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Electrical Interconnects Made of Carbon Nanotubes: Applications in 3D Chip Stacking
- 2012
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Ingår i: IMAPS Nordic Annual Conference Proceedings 2012, Helsingor, 2 - 4 September 2012. - 9781622763160 ; , s. 150-159
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Konferensbidrag (refereegranskat)abstract
- High density electronics integration at the system level, supported by advanced packaging solutions, is expected to be the driving force for the future down-scaling of semiconductor electronics. One recent focus in the field of electronic packaging is the use of through-silicon-vias (TSVs) to form three-dimensional (3D) integration. A central task in developing 3D chip integration is to build reliable and efficient 3D electrical interconnects for signal transfer and power distribution among the stacked layers. Carbon nanotubes (CNTs) are proposed to be a promising material to build future interconnects due to their many attractive electrical and mechanical properties. This paper reviews the state-of-art in CNT integration technology, with a focus on the application of 3D chip stacking TSV interconnects. The simplicity and manufacturability of fabricating CNT TSVs presented in this paper indicate a great application potential of CNTs as an interconnection material in future 3D integrated electronics.
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| 7. |
- Liu, Johan, 1960, et al.
(författare)
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1. Thermal Characterization of Power Devices Using Graphene-based Film
- 2014
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Ingår i: Proceedings - Electronic Components and Technology Conference. - 0569-5503. - 9781479924073 ; , s. 459 - 463
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Konferensbidrag (refereegranskat)abstract
- Due to its atomic structure with sp2 hybrid orbitals and unique electronic properties, graphene has an extraordinarily high thermal conductivity which has been reported to be up to 5000 W/mK. As a consequence, the use of graphene-based materials for thermal management has been subject to substantial attention during recent years in both academia and industry. In this paper, the development of a new type of graphene-based thin film for heat dissipation in power devices is presented. The surface of the developed graphene based film is primarily composed of functionalized graphene oxide, that can be bonded chemically to the device surface and thus minimize the interface thermal resistance caused by surface roughness. A very high in-plane thermal conductivity with a maximum value of 1600 W/mK was detected by laser flash machine regarding to the graphene-based films. To investigate the structure of the graphene-based films, scanning electron microscopy (SEM) and raman spectroscopy were carried out. Finally, LED demonstrators were built to illustrate the thermal performance of graphene-based film and the functional layers. IR camera recorded a 5°C lower temperature of a LED demonstrator with SHT G1000 as the binding layer instead of a commercial thermal conductive adhesive.
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| 8. |
- Liu, Johan, 1960, et al.
(författare)
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A new solder matrix nano polymer composite for thermal management and die attach applications
- 2014
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Ingår i: Composites Science and Technology. - 0266-3538. ; 94, s. 54-61
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Tidskriftsartikel (refereegranskat)abstract
- The increasing integration of microelectronics, raising the need for effective heat dissipation, requires new and improved composite materials technologies. For both thermal interface and die attach materials, a major challenge is to combine low thermal resistance joints with sufficient thermomechanical decoupling and reliability. In this paper, we present the fabrication and characterisation of a new type of solder matrix nano polymer composite (SMNPC) aiming to address these challenges. The SMNPC is fabricated into preforms by liquid-phase infiltration of a Sn–Ag–Cu matrix into a silver nanoparticle coated electrospun polyimide fibre mesh. The composite is demonstrated to possess high heat transfer capability, close to that of a direct soldered interface, lower elastic modulus compared to pure Sn–Ag–Cu alloy, and reliable thermomechanical performance during thermal cycling. Taken together, the results indicate that the developed SMNPC can be a useful composite alternative compared to conventional solders and polymer matrix materials for thermal management applications.
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| 9. |
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| 10. |
- Lu, Xiuzhen, et al.
(författare)
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Environmental reliability of nano-structured polymer-metal composite thermal interface material
- 2012
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Ingår i: Proceedings of IEEE CPMT 2012 International Conference on Electronic Packaging Technology & High Density Packaging. - 9781467316804 ; , s. 1326-1328
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Konferensbidrag (refereegranskat)abstract
- Heat dissipation has become a `bottleneck' for the properties of electronics products and photoelectronic devices. Thermal interface material (TIM) plays a key role in heat dissipation, and must have flexibility and high thermal conductivity in order to decrease the thermal resistance of the interface between the device and heat sink or cooler. We developed a new type of nano-TIM based electrospun technology. Metal with low melting point was injected into the polymer nanofiber scaffold fabricated by electrospun. The heat of the electronic devices dispersed through the metal, resulting in high thermal conductivity of the nano-TIM. Environmental reliability of nano-structured polymer-metal composite thermal interface material was studied by thermal cycling test. A sandwich structure was used to get shear strength of pull test. The shear strength of the samples dropped to about 50% after 500 cycles. SEM and EDS results indicate that overflow of alloy during thermal cycling test leads to decreasing shear strength.
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