Sökning: WFRF:(Lotsari Antiope 1981)
> Hashemi Seyed Ehsan 1986 >
Effect of compositional interlayers on the vertical electrical conductivity of Si-doped AlN/GaN distributed Bragg reflectors grown on SiC''
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- Hashemi, Seyed Ehsan, 1986 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Hjort, Filip, 1991 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Stattin, Martin, 1983 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Ive, Tommy, 1968 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Bäcke, Olof, 1984 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Lotsari, Antiope, 1981 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Halvarsson, Mats, 1965 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Adolph, David, 1971 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Desmaris, Vincent, 1977 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Meledin, Denis, 1974 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Haglund, Åsa, 1976 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2017
- Engelska.
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Ingår i: Applied Physics Express. - 1882-0786 .- 1882-0778. ; 10:5, s. 055501-
- Relaterad länk:
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https://research.cha...
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https://doi.org/10.7...
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Abstract
Ämnesord
Stäng
- We have investigated the effect of strain-compensating interlayers on the vertical electrical conductivity of Si-doped AlN/GaN distributed Bragg reflectors (DBRs). Samples with 10.5 mirror pairs were grown through plasma-assisted molecular beam epitaxy on SiC. Room-temperature current–voltage characteristics were measured vertically in mesas through 8 of the 10.5 pairs. The sample with no interlayers yields a mean specific series resistance of 0.044 Ω cm2 at low current densities, while three samples with 5/5-Å-thick, 2/2-nm-thick, and graded interlayers have resistivities between 0.16 and 0.34 Ω cm2. Thus, interlayers impair vertical current transport, and they must be designed carefully when developing conductive DBRs.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)