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Träfflista för sökning "WFRF:(Lu W) srt2:(2000-2004);pers:(Shen S C)"

Sökning: WFRF:(Lu W) > (2000-2004) > Shen S C

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1.
  • Li, Z-F, et al. (författare)
  • Determination of carrier-transfer length from side-wall quantum well to quantum wire by micro-photoluminescence scanning
  • 2003
  • Ingår i: Journal of Electronic Materials. - : Springer Science Business Media. - 0361-5235 .- 1543-186X. ; 32:8, s. 913-916
  • Tidskriftsartikel (refereegranskat)abstract
    • Micro-photoluminescence (mu-PL) line scanning across a single V-groove, GaAs/AlGaAs quantum wire (QWR) has been performed at room temperature, revealing a clear spatial-dependence of the PL. After fitting each PL spectrum by multi-Gaussian line shapes, intensity profiles of each PL component from confined structures have been obtained as functions of the scanning position. The PL quenching of a side-wall quantum well (SQWL) has been recognized in a certain area in the vicinity of the QWR and is interpreted by carrier transfer into the QWR within effective transfer length. By simulating the carrier-transfer process from SQWL to QWR as a convolution of a step function for carrier distribution and a Gaussian function for exciting laser irradiance, the effective transfer length of about 1.8+/-0.3 mum has, therefore, been concluded.
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2.
  • Zhao, Q.X., et al. (författare)
  • Dynamic properties of radiative recombination in p-type d-doped layers in GaAs
  • 2001
  • Ingår i: Physical Review B. - : American Physical Society. - 2469-9950 .- 2469-9969. ; 63
  • Tidskriftsartikel (refereegranskat)abstract
    •  We present an optical study of thin Zn-doped GaAs layers embedded in bulk GaAs, grown by metal-organic vapor-phase-epitaxy by means of stationary and time-resolved optical spectroscopy. The concentration of the Zn acceptors was aimed at 2×1020/cm3 in 4-nm-wide doping regions. The intensity of the optical radiative transition (so called the F emission) appearing in photoluminescence spectra was found to be related to holes confined at doping regions. The F emission shows a strong dependence on excitation intensity and temperature. The energy position varies from 1.46 to 1.49 eV as the excitation density changes from about 40 mW/cm2 to 23 W/cm2. The dynamic properties of the F-emission band have been studied by time-resolved spectroscopy. The F emission shows a nonexponential decay character. The decay time of the F emission exhibits a strong dependence on the detection energy within the F-emission band. The decay time becomes longer as the detection energy is redshifted.
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