| 1. |
- Dick Thelander, Kimberly, et al.
(författare)
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Self-assembled InAs nanowire networks
- 2005
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Ingår i: Book of extended abstracts: MRS Fall Meet, Boston, Ma, USA, 2005.
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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| 2. |
- Johansson, Jonas, et al.
(författare)
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Structural properties of (111)B-oriented III-V nanowires
- 2006
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Ingår i: Nature Materials. - : Springer Science and Business Media LLC. - 1476-4660 .- 1476-1122. ; 5:7, s. 574-580
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Tidskriftsartikel (refereegranskat)abstract
- Controlled growth of nanowires is an important, emerging research field with many applications in, for example, electronics, photonics, and life sciences. Nanowires of zinc blende crystal structure, grown in the left fence111right fenceB direction, which is the favoured direction of growth, usually have a large number of twin-plane defects. Such defects limit the performance of optoelectronic nanowire-based devices. To investigate this defect formation, we examine GaP nanowires grown by metal-organic vapour-phase epitaxy. We show that the nanowire segments between the twin planes are of octahedral shape and are terminated by {111} facets, resulting in a microfaceting of the nanowires. We discuss these findings in a nucleation context, where we present an idea on how the twin planes form. This investigation contributes to the understanding of defect formation in nanowires. One future prospect of such knowledge is to determine strategies on how to control the crystallinity of nanowires.
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| 3. |
- Johansson, Jonas, et al.
(författare)
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The structure of <1 1 1 > B oriented GaP nanowires
- 2007
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 298, s. 635-639
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Tidskriftsartikel (refereegranskat)abstract
- Nanowires of zinc blende crystal structure, grown in the < 111 > B direction usually have a large number of twin plane defects. In order to investigate this phenomenon, we grow GaP nanowires with metal-organic vapor phase epitaxy. By rotating the nanowires in a high resolution transmission electron microscope, we show that the nanowire segments between the twin planes are of octahedral shape and are terminated by {111} facets. Due to the alternating orientations of these twin octahedra, the sidewalls of the nanowires can be described as microfaceted surfaces with an overall orientation of 11 1 2}, but composed of alternating 11 1 I}A and {1 I 1}B facets. Moreover, the segment thicknesses follow exponential distributions, which show that there is a certain probability of twin plane formation, which is independent of segment thickness. (c) 2006 Elsevier B.V. All rights reserved.
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| 4. |
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| 5. |
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| 6. |
- Mandl, Bernhard, et al.
(författare)
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Au-free epitaxial growth of InAs nanowires
- 2006
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 6:8, s. 1817-1821
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Tidskriftsartikel (refereegranskat)abstract
- III-V nanowires have been fabricated by metal-organic vapor-phase epitaxy without using Au or other metal particles as a catalyst. Instead, prior to growth, a thin SiOx layer is deposited on the substrates. Wires form on various III-V substrates as well as on Si. They are nontapered in thickness and exhibit a hexagonal cross-section. From high-resolution X-ray diffraction, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined.
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