1. |
|
|
2. |
- Thelander, Claes, et al.
(författare)
-
Electrical properties of InAs-based nanowires
- 2004
-
Ingår i: AIP Conference Proceedings. - 0094-243X .- 1551-7616. ; 723, s. 449-452
-
Konferensbidrag (refereegranskat)abstract
- Semiconductor nanowires are grown using chemical beam epitaxy and metal organic vapor phase epitaxy from size-selected gold nanoparticles acting as catalysts. By changing materials during the growth it is possible to form heterostructures both along the length of the nanowires but also in a core-shell fashion. In particular, incorporation of pairs of InP tunnel barriers in InAs nanowires has been used to fabricate single-electron transistors and resonant tunneling diodes
|
|
3. |
- Thelander, Claes, et al.
(författare)
-
One dimensional heterostructures and resonant tunneling in III-V nanowires
- 2003
-
Ingår i: 2003 International Symposium on Compound Semiconductors (Cat. No.03TH8675). - 0780378202 ; , s. 151-152
-
Konferensbidrag (refereegranskat)abstract
- We use a bottom-up approach to grow epitaxially nucleated semiconductor nanowires from gold particles. Heterostructure barriers of InP are introduced inside InAs nanowires to form resonant tunneling diodes and single-electron transistors
|
|
4. |
- Thelander, Claes, et al.
(författare)
-
Single-electron transistors in heterostructure nanowires.
- 2003
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 83:10, s. 2052-2054
-
Tidskriftsartikel (refereegranskat)abstract
- Semiconductor-based single-electron transistors have been fabricated using heterostructure nanowire growth, by introducing a double barrier of InP into InAs nanowires. From electrical measurements, we observe a charging energy of 4 meV for the approximately 55 nm diameter and 100 nm long InAs islands between the InP barriers. The Coulomb blockade can be periodically lifted as a function of gate voltage for all devices, which is a typical signature of single-island transistors. Homogeneous InAs nanowires show no such effect for the corresponding voltage ranges. ©2003 American Institute of Physics.
|
|