| 1. |
- Deppert, Knut, et al.
(författare)
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Epitaxielle Kristallnadeln und -bäume
- 2005
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Ingår i: Book of abstracts: DGKK-Jahrestagung, Köln, Germany (2005).
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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| 2. |
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| 3. |
- Mårtensson, Thomas, et al.
(författare)
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Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings
- 2007
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Ingår i: Advanced Materials. - : Wiley. - 1521-4095 .- 0935-9648. ; 19, s. 1801-1801
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Tidskriftsartikel (refereegranskat)abstract
- Indium arsenide nanowires are grown directly on silicon substrates (see figure and cover) using a method employing self-assembled organic coatings to create oxide-based growth templates. High-performance materials, such as InAs, could have great impact on future nanoelectronics if integrated with Si, but integration has so far been hard to realize with other methods.
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| 4. |
- Rehnstedt, Carl, et al.
(författare)
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Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates
- 2008
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383. ; 55:11, s. 3037-3041
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Tidskriftsartikel (refereegranskat)abstract
- We report on InAs enhancement-mode field-effect transistors integrated directly on Si substrates. The transistors consist of vertical InAs nanowires, grown on Si substrates without the use of metal seed particles, and they are processed with a 50-nm-long metal wrap gate and high-kappa gate dielectric. Device characteristics showing enhancement-mode operation are reported. The output characteristics are asymmetric due to the band alignment and band bending at the InAs/Si interface. The implemented transistor geometry can therefore also serve as a test structure for investigating the InAs/Si heterointerface. From temperature-dependent measurements, we deduce an activation energy of about 200 meV for the TnAs/Si conduction band offset.
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| 5. |
- Samuelson, Lars, et al.
(författare)
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Semiconductor nanowires for 0D and 1D physics and applications
- 2004
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Ingår i: Physica E: Low-Dimensional Systems and Nanostructures. - : Elsevier BV. - 1386-9477. ; 25:2-3, s. 313-318
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Tidskriftsartikel (refereegranskat)abstract
- During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize. (C) 2004 Elsevier B.V. All rights reserved.
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| 6. |
- Thelander, Claes, et al.
(författare)
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Electrical properties of InAs-based nanowires
- 2004
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Ingår i: AIP Conference Proceedings. - 0094-243X .- 1551-7616. ; 723, s. 449-452
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Konferensbidrag (refereegranskat)abstract
- Semiconductor nanowires are grown using chemical beam epitaxy and metal organic vapor phase epitaxy from size-selected gold nanoparticles acting as catalysts. By changing materials during the growth it is possible to form heterostructures both along the length of the nanowires but also in a core-shell fashion. In particular, incorporation of pairs of InP tunnel barriers in InAs nanowires has been used to fabricate single-electron transistors and resonant tunneling diodes
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| 7. |
- Thelander, Claes, et al.
(författare)
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One dimensional heterostructures and resonant tunneling in III-V nanowires
- 2003
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Ingår i: 2003 International Symposium on Compound Semiconductors (Cat. No.03TH8675). - 0780378202 ; , s. 151-152
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Konferensbidrag (refereegranskat)abstract
- We use a bottom-up approach to grow epitaxially nucleated semiconductor nanowires from gold particles. Heterostructure barriers of InP are introduced inside InAs nanowires to form resonant tunneling diodes and single-electron transistors
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| 8. |
- Thelander, Claes, et al.
(författare)
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Single-electron transistors in heterostructure nanowires.
- 2003
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 83:10, s. 2052-2054
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Tidskriftsartikel (refereegranskat)abstract
- Semiconductor-based single-electron transistors have been fabricated using heterostructure nanowire growth, by introducing a double barrier of InP into InAs nanowires. From electrical measurements, we observe a charging energy of 4 meV for the approximately 55 nm diameter and 100 nm long InAs islands between the InP barriers. The Coulomb blockade can be periodically lifted as a function of gate voltage for all devices, which is a typical signature of single-island transistors. Homogeneous InAs nanowires show no such effect for the corresponding voltage ranges. ©2003 American Institute of Physics.
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