| 1. |
- Mishra, A, et al.
(författare)
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Diminishing benefits of urban living for children and adolescents' growth and development
- 2023
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Ingår i: Nature. - : Springer Science and Business Media LLC. - 1476-4687 .- 0028-0836. ; 615:7954, s. 874-883
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Tidskriftsartikel (refereegranskat)abstract
- Optimal growth and development in childhood and adolescence is crucial for lifelong health and well-being1–6. Here we used data from 2,325 population-based studies, with measurements of height and weight from 71 million participants, to report the height and body-mass index (BMI) of children and adolescents aged 5–19 years on the basis of rural and urban place of residence in 200 countries and territories from 1990 to 2020. In 1990, children and adolescents residing in cities were taller than their rural counterparts in all but a few high-income countries. By 2020, the urban height advantage became smaller in most countries, and in many high-income western countries it reversed into a small urban-based disadvantage. The exception was for boys in most countries in sub-Saharan Africa and in some countries in Oceania, south Asia and the region of central Asia, Middle East and north Africa. In these countries, successive cohorts of boys from rural places either did not gain height or possibly became shorter, and hence fell further behind their urban peers. The difference between the age-standardized mean BMI of children in urban and rural areas was <1.1 kg m–2 in the vast majority of countries. Within this small range, BMI increased slightly more in cities than in rural areas, except in south Asia, sub-Saharan Africa and some countries in central and eastern Europe. Our results show that in much of the world, the growth and developmental advantages of living in cities have diminished in the twenty-first century, whereas in much of sub-Saharan Africa they have amplified.
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| 2. |
- Kassamakova, L, et al.
(författare)
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Al/Si ohmic contacts to p-type 4H-SiC for power devices
- 2000
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Ingår i: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 338-3, s. 1009-1012
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Tidskriftsartikel (refereegranskat)abstract
- The formation of Al/Si/p-4H SiC ohmic contacts at temperatures as low as 750 degreesC is reported in this paper. The dependence of electrical properties and contact morphology have been investigated as a function of the annealing regime in the interval 600-700 degreesC. The lowest contact resistivity of 3.8x10(-5) Omega .cm(2) was obtained at 700 degreesC annealing, however the most reproducible results were in the low 10(-4) Omega .cm(2) range. It has been established that the predominate current transport mechanism in the Al/Si/SiC contacts is thermionic-field emission. Atomic force microscopy showed that the addition of Si to the contact layer improves its morphology, and the pitting of annealed Al is not observed. The contacts developed are stable during ageing at 500 degreesC and at operating temperatures up to 450 degreesC. After the contacts testing with current density of 10(3) A/cm(2) at temperatures up to 450 degreesC, their contact resistivity decreases slightly.
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| 3. |
- Kassamakova, L, et al.
(författare)
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Temperature stable Pd ohmic contacts to p-type 4H-SiC formed at low temperatures
- 1999
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 46:3, s. 605-611
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Tidskriftsartikel (refereegranskat)abstract
- The formation of low resistivity Pd-based ohmic contacts to p-type 4H-SiC below 750 degrees C are reported herein, The electrical properties of the contacts were examined using I-V measurements and the transmission-line model (TLM) technique. Contact resistivity as a function of annealing was investigated over the temperature range of 600 degrees C-700 degrees C, The lowest contact resistivity (5.5 x 10(-5) Ohm cm(2)) was obtained after annealing at 700 degrees C for 5 min, Atomic force microscopy of the as-deposited Pd layer showed a root-mean square roughness of similar to 8 nm, while after annealing at 700 degrees C, agglomeration occurred, increasing the roughness to 111 nm, Auger electron spectroscopy depth profiles revealed that with annealing, interdiffusion had resulted in the formation of Pd-rich silicides. However, X-ray diffraction and Rutherford backscattering showed that the majority of the film was still (unreacted) Pd. The thermal stability and reliability of the Pd contacts were examined by aging and temperature dependence electrical tests, The contacts annealed at 700 OC were stable at prolonged heating at a constant temperature of 500 degrees C and they showed thermal stability in air at operating temperatures up to 450 degrees C, This stability was not found for contacts formed at lower temperatures of 600 degrees C or 650 degrees C.
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| 4. |
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| 5. |
- Virojanadara, Chariya, et al.
(författare)
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Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation
- 2002
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 31:12, s. 1353-1356
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Tidskriftsartikel (refereegranskat)abstract
- The Schottky barrier height (SBH) of Au on 4H-SiC(0001) has been studied using photoemission and synchrotron radiation. The Au was deposited in-situ on clean and well-ordered root3 X roots R30degrees reconstructed SiC surfaces prepared by in situ heating at similar to950degreesC. The SBH was determined from the shift observed in the Si 2p core level, in addition to the initial band bending determined for the clean surface. The results were compared with values obtained by electrical, capacitance-voltage (C-V), and current-voltage (I-V) characterization methods. A favorable comparison between the three independent, SBH determination methods was found.
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| 6. |
- Wahab, Qamar Ul, et al.
(författare)
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Improvements in the electrical performance of high voltage 4H-SiC Schottky diodes by hydrogen annealing
- 2001
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Ingår i: Materials Science Forum, Vols. 353-356. ; , s. 691-694
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Konferensbidrag (refereegranskat)abstract
- A significant improvement in all the important parameters of the diodes were observed by annealing in H-2 at 300 degreesC. The forward current increased from 55 mA to 100 mA at a bias voltage of 2.5 V. The reverse leakage current measured at -500 V was reduced from 3.5 x 10(-9) to 4.8 x 10(-10) Amps for a 0.5 mm diameter diode. The average value of the barrier height increased by at least 0.2 eV, measured by Capacitance-Voltage and Current-Voltage technique indicating the increase of both static and effective barrier heights. The average value of ideality factor also improved and a best value of 1.06 was obtained for the hot-wall CVD grown samples after Hz annealing. Hydrogen atoms may passivate the dangling bends at the metal-semiconductor interface and thus by saturating the dangling bonds reduce the interface state density.
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| 7. |
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