| 1. |
- Agnarsson, Björn, 1977, et al.
(författare)
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Rutile TiO 2 thin films grown by reactive high power impulse magnetron sputtering
- 2013
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 545, s. 445-450
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Tidskriftsartikel (refereegranskat)abstract
- Thin TiO 2 films were grown on Si(001) substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 C.Optical and structural properties of films were compared both before and after post-annealing using scanning electron microscopy, low angle X-ray reflection (XRR), grazing inc idence X-ray diffractometry and spectroscopic ellipsometry.Both dcMS- and HiPIMS-grown films reveal polycrystalline rutile TiO 2 , even prior to post-annealing.The HiPIMS-grown films exhibit significantly larger grains compared to that of dcMC-grown films, approaching 100% of the film thickness for films grown at 700 C.In addition, the XRR surface roughness of HiPIMS-grown films was significantly lower than that of dcMS-grown films over the whole temperature range 300-700 C.Dispersion curves could only be obtained for the HiPIMS-grown films, which were shown to have a refractive index in the range of 2.7-2.85 at 500 nm.The results show that thin, rutile TiO 2 films, with high refractive index, can be obtained by HiPIMS at relatively low growth temperatures, without post-annealing.Furthermore, these films are smoother and show better optical characteristics than their dcMS-grown counterparts.© 2013 Elsevier B.V.All rights reserved.
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| 2. |
- Magnus, Fridrik, et al.
(författare)
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Current-voltage-time characteristics of the reactive Ar/O2 high power impulse magnetron sputtering discharge
- 2012
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Institute of Physics (AIP). - 0734-2101 .- 1520-8559. ; 30:5
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Tidskriftsartikel (refereegranskat)abstract
- The discharge current–voltage–time waveforms are studied in the reactive Ar/O2 high power impulse magnetron sputtering discharge with a titanium target for 400 μs long pulses. The discharge current waveform is highly dependent on both the pulse repetition frequency and discharge voltage and the current increases with decreasing frequency or voltage. The authors attribute this to an increase in the secondary electron emission yield during the self-sputtering phase of the pulse, as an oxide forms on the target.
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| 3. |
- Magnus, Fridrik, et al.
(författare)
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Digital Smoothing of the Langmuir Probe I-V Characteristic
- 2008
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Ingår i: Review of Scientific Instruments. - : American Institute of Physics (AIP). - 0034-6748 .- 1089-7623. ; 79:7
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Tidskriftsartikel (refereegranskat)abstract
- Electrostatic probes or Langmuir probes are the most common diagnostic tools in plasma discharges. The second derivative of the Langmuir probe I-V characteristic is proportional to the electron energy distribution function. Determining the second derivative accurately requires some method of noise suppression. We compare the Savitzky-Golay filter, the Gaussian filter, and polynomial fitting to the Blackman filter for digitally smoothing simulated and measured I-V characteristics. We find that the Blackman filter achieves the most smoothing with minimal distortion for noisy data.
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| 4. |
- Magnus, Fridrik, et al.
(författare)
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Nucleation and resistivity of ultrathin TiN films grown by high power impulse magnetron sputtering
- 2012
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Ingår i: IEEE Electron Device Letters. - : IEEE. - 0741-3106 .- 1558-0563. ; 33:7, s. 1045-1047
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Tidskriftsartikel (refereegranskat)abstract
- TiN films have been grown on SiO 2 by reactive high-power impulse magnetron sputtering (HiPIMS) at temperatures of 22°C-600°C. The film resistance is monitored in situ to determine the coalescence and continuity thicknesses that decrease with increasing growth temperature with a minimum of 0.38 ± 0.05 nm and 1.7 ± 0.2 nm, respectively, at 400°C. We find that HiPIMS-deposited films have significantly lower resistivity than dc magnetron sputtered (dcMS) films on SiO 2 at all growth temperatures due to reduced grain boundary scattering. Thus, ultrathin continuous TiN films with superior electrical characteristics can be obtained with HiPIMS at reduced temperatures compared to dcMS.
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