| 1. |
- Lewen, R., et al.
(författare)
-
High frequency characterization of a GaInAs/InP electronic waveguide T-branch switch
- 2002
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 91:4, s. 2398-2402
-
Tidskriftsartikel (refereegranskat)abstract
- We report comprehensive microwave measurements on a T-branch switch; a GaInAs/InP electron waveguide based structure. The study includes a small signal model of the device where limitations of high frequency operation are discussed. An example of large signal operation where the nonlinearity of the device is exploited by operating the T-branch switch as a frequency multiplier is demonstrated.
|
|
| 2. |
- Li, Jun, et al.
(författare)
-
Tolerance of metal halide perovskites to mechanical treatment enables the fabrication of patterned luminescence nano- and microstructures
- 2022
-
Ingår i: Materials Advances. - : Royal Society of Chemistry (RSC). - 2633-5409. ; 27:35
-
Tidskriftsartikel (refereegranskat)abstract
- Metal halide perovskites have shown a great performance in a broad range of optoelectronic devices. The variety of preparation methods makes perovskites especially attractive, yet preparation of complex nanostructures based on these materials remains challenging. Here we present a template assisted method allowing to achieve any pre-designed arrangement of methylammonium lead triiodide (MAPbI3) polycrystalline patterns with the spatial resolution defined by the template. We utilized a Si/SiO2 wafer with circular 180 nm deep recesses with diameters ranging from 200 to 1600 nm as a template. A polycrystalline perovskite powder was obtained by scratching off a thin perovskite film and mechanically introduced into the patterned template as a pigment. Scanning electron microscopy revealed that the recesses are filled with tightly packed sub-20 nm crystallites. Considering that the spin-coated film used as a source of MAPbI3 consisted of grains up to 2000 nm in diameter suggests that the initially prepared grains were crashed by rubbing to much smaller crystallites. In spite of this harsh mechanical treatment, the filled recesses showed a strong photoluminescence signal, demonstrating the applicability of this approach for the fabrication of diverse nanophotonic structures.
|
|
| 3. |
- Martin, TP, et al.
(författare)
-
The influence of confining wall profile on quantum interference effects in etched Ga0.25In0.75As/InP billiards
- 2003
-
Ingår i: Superlattices and Microstructures. - : Elsevier BV. - 0749-6036. ; 34:3-6, s. 179-184
-
Tidskriftsartikel (refereegranskat)abstract
- We present measurements of the potential profile of etched GaInAs/InP billiards and show that their energy gradients are an order of magnitude steeper than those of surface-gated GaAs/AlGaAs billiards. Previously observed in GaAs/AlGaAs billiards, fractal conductance fluctuations are predicted to be critically sensitive to the billiard profile. Here we show that, despite the increase in energy gradient, the fractal conductance fluctuations persist in the harder GaInAs/InP billiards. (C) 2004 Elsevier Ltd. All rights reserved.
|
|
| 4. |
- Maximov, Ivan, et al.
(författare)
-
Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs
- 2002
-
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484. ; 13:5, s. 666-668
-
Tidskriftsartikel (refereegranskat)abstract
- We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are demonstrated.
|
|
| 5. |
- Maximov, Ivan, et al.
(författare)
-
Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP
- 2003
-
Ingår i: Microelectronic Engineering. - 1873-5568. ; 67-8, s. 196-202
-
Tidskriftsartikel (refereegranskat)abstract
- We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.
|
|
| 6. |
- Shorubalko, Ivan, et al.
(författare)
-
A novel frequency-doubling device based on three-terminal ballistic junction
- 2002
-
Ingår i: Device Research Conference (Cat. No.02TH8606). - 0780373170 ; , s. 159-160
-
Konferensbidrag (refereegranskat)abstract
- Summary form only given. Ballistic devices have received increasing attention for their nonlinear electrical properties, which are interesting from both physics and application points of view. Recently, novel nonlinear electrical properties of three-terminal ballistic junctions (TBJs) have been discovered theoretically and experimentally. In this work we propose and demonstrate functionality of a novel frequency-doubling device based on a three-terminal ballistic junction. The novel devices are fabricated by integrating a T-shaped TBJ and a one-dimensional (1D) lateral-field-effect transistor (lateral-FET) with trench gate-channel insulation on high-electron-mobility GaInAs/InP quantum well structures The results of the measurements show frequency doubling and gain in these novel devices at room temperature
|
|
| 7. |
- Shorubalko, Ivan, et al.
(författare)
-
A novel frequency-multiplication device based on three-terminal ballistic junction
- 2002
-
Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 23:7, s. 377-379
-
Tidskriftsartikel (refereegranskat)abstract
- In this letter, a novel frequency-multiplication device based on a three-terminal ballistic junction is proposed and demonstrated. A 100 nm-size, three-terminal ballistic junction and a one-dimensional (1-D), lateral-field-effect transistor with trench gate-channel insulation are fabricated from high-electron-mobility GaInAs/InP quantum-well material as a single device. The devices show frequency doubling and gain at room temperature. The performance of these devices up to room temperature originates from the nature of the device functionality and the fact that the three-terminal device extensions are maintained below the carrier mean-free path. Furthermore, it is expected that the device performance can be extended up to THz-range.
|
|
| 8. |
- Xu, Hongqi, et al.
(författare)
-
A novel device principle for nanoelectronics
- 2002
-
Ingår i: Materials Science and Engineering C: Materials for Biological Applications. - 0928-4931. ; 19:1-2, s. 417-420
-
Tidskriftsartikel (refereegranskat)abstract
- We report on the results of our recent theoretical and experimental investigations of a novel, room temperature electrical property of three-terminal ballistic junctions (TBJs). For a symmetric TBJ device, it is found that when finite voltages V-1 and V-r are applied in push-pull fashion, with V-1 = V and V-r = - V. to the left and right branches, the voltage output V-c from the central branch will always be negative. This property is in strong contrast to a symmetric three-terminal device made from conventional diffusive conductors, for which Ohm's law predicts a constant zero output of V-c for all V-1 - V-c.This novel characteristic appears even when the device symmetry is broken, provided that V is greater than the threshold. It is also shown that the TBJ devices show a good parabolic behavior for V-c vs. V in a large range of voltages V.
|
|
| 9. |
- Xu, Hongqi, et al.
(författare)
-
Novel nanoelectronic triodes and logic devices with TBJs
- 2004
-
Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 25:4, s. 164-166
-
Tidskriftsartikel (refereegranskat)abstract
- In this letter, we demonstrate the realization of novel diodes, triodes, and logic gates with three-terminal ballistic junctions (TBJs) made from a semiconductor heterostructure. The approach exploits the ballistic nature of electron transport, which has emerged in the nanostructures. Importantly, we show that TBJs function as logic AND gates and can be used to construct other compound logic gates, such as NAND gates with voltage gain, when combined with a point contact (an inverter). The demonstrated devices show favorable characteristics such as low turn-on voltage in rectification and room-temperature operation.
|
|
| 10. |
- Xu, Hongqi, et al.
(författare)
-
Three-terminal ballistic junctions: new building blocks for functional devices in nanoelectronics
- 2002
-
Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
-
Konferensbidrag (refereegranskat)abstract
- A three-terminal ballistic junction (TBJ) is a device in which three quantum point contacts are coupled via a ballistic region. Previous studies have shown that the TBJs exhibit a novel electrical property which has potential applications in nanoelectronics. Here, based on our recent theoretical and experimental investigations, we will demonstrate that various nanoelectronic devices can be fabricated using the TBJs as building blocks. In particular, the results of our recent design, fabrication, modeling and measurements of TBJ diodes and transistors, TBJ frequency multipliers, and TBJ logic gates will be presented and discussed
|
|
