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Träfflista för sökning "WFRF:(Maximov Ivan) ;pers:(Graczyk Mariusz)"

Sökning: WFRF:(Maximov Ivan) > Graczyk Mariusz

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1.
  • Maximov, Ivan, et al. (författare)
  • Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP
  • 2003
  • Ingår i: Microelectronic Engineering. - 1873-5568. ; 67-8, s. 196-202
  • Tidskriftsartikel (refereegranskat)abstract
    • We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.
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2.
  • Abdel, Naseem, et al. (författare)
  • Fabrication and Characterization of Ultra-Thin PIN Silicon Detectors for Counting the Passage of MeV Ions
  • 2013
  • Ingår i: IEEE Transactions on Nuclear Science. - 0018-9499. ; 60:2, s. 1182-1188
  • Tidskriftsartikel (refereegranskat)abstract
    • This paper describes the fabrication and initial characterization of an ultra-thin silicon PIN detector using a new technique in silicon nanotechnology. In collaboration with the Nuclear Physics Division and the Lund Nano Lab at Lund University, we have developed and manufactured ultra thin Delta E-detectors for spectroscopic applications. The fabrication process has been carried out using a double-polished silicon substrate n-type wafer and locally thinning by means of a 10:1 solution of 25% tetramethyl ammonium hydroxide (TMAH) with Isopropyl alcohol. More than 100 detectors of different thicknesses, down to 5 mu m with active areas ranging from 0.71 to 0.172 mm(2), have been fabricated. The main design considerations of our thin detectors were a very low leakage current below 12 nA and a low full depletion voltage at a reverse bias less than 1.5 V. Finally, most of our thin detectors offer an energy resolution (FWHM) as low as 31 keV for 5.487 MeV alpha particles from a Am-241 source.
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3.
  • Abdel, N. S., et al. (författare)
  • Efficient ultra-thin transmission silicon detectors for a single-ion irradiation system at the Lund Ion Beam Analysis Facility
  • 2014
  • Ingår i: Journal of Instrumentation. - 1748-0221. ; 9
  • Tidskriftsartikel (refereegranskat)abstract
    • This paper describes the fabrication of efficient ultra-thin silicon transmission detectors for use as pre-cell detectors in single-ion experiments on living cells at the Lund Ion Beam Analysis Facility. More than 40 detectors of different thicknesses down to 5 mu m have been fabricated and packaged. The main design considerations were very low leakage current (below 9 nA) and low full depletion voltage at biases less than 0.5 V at room temperature. In addition, we have shown that cooling the device can reduce the leakage current to 3 nA. The experimental testing of the pre-cell detection system is based on counting the passage of ions through the transmission (Delta E) detector before hitting the stopping (E) detector placed behind it, to ensure the accurate delivery of specific doses of radiation to the sample. Optimal detection of the fabricated detectors for the passage of an external beam of 2.2 MeV protons was obtained by cooling the device to below 2 degrees C. Cooling the Delta E detectors provides up to 20% better energy resolution and up to 98% detection efficiency for 2.2 MeV protons. The development of this kind of efficient pre-cell detector enables a range of new experiments to be conducted on thick biological samples.
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5.
  • Asif, Muhammad, et al. (författare)
  • Comparison of UV-curable materials for high-resolution polymer nanoimprint stamps
  • 2022
  • Ingår i: Micro and Nano Engineering. - : Elsevier BV. - 2590-0072. ; 14
  • Tidskriftsartikel (refereegranskat)abstract
    • We present a systematic comparison of four resins for nanoimprint intermediate polymer stamps, the standard IPS material, OrmoStamp and two new polymers GMN-PS90 (foil) and GMN-PS40 (liquid). The new polymers are based on acrylated silane and offer sufficiently high Young’s modulus and low shrinkage to provide good me­ chanical stability during the imprint process of well-separated structures. No anti-sticking treatment requires for those new polymers and they can be used at room temperature, which results in better stability of the nano­ imprint process. The nanoimprint experiments using four resins showed a superior performance of the GMNPS90 material in both single-layer and double-layer imprint process with resolution after lift-off about 30 nm.
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6.
  • Beck, Marc, et al. (författare)
  • Improving stamps for 10 nm level wafer scale nanoimprint lithography
  • 2002
  • Ingår i: Microelectronic Engineering. - 1873-5568. ; 61-2, s. 441-448
  • Tidskriftsartikel (refereegranskat)abstract
    • The smaller the features on the stamp the more important are the interactions between stamp and polymer layer. A stamp rich in small structures will effectively show a surface area enlargement, which generally leads to adhesion of the polymer to the stamp. This makes a subsequent imprint impossible without troublesome and time-consuming cleaning. The anti-adhesion properties of Si- or SiO2-based stamps can be improved by binding fluorinated silanes covalently to the surface. In this paper, we demonstrate that the deposition procedure as well as the environment during deposition are important with respect to the quality and performance of the molecular layer. (C) 2002 Published by Elsevier Science B.V.
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7.
  • Beck, Marc, et al. (författare)
  • Nanoelectrochemical transducers for (bio-) chemical sensor applications fabricated by nanoimprint lithography
  • 2004
  • Ingår i: Microelectronic Engineering. - 1873-5568. ; 73-74, s. 837-842
  • Tidskriftsartikel (refereegranskat)abstract
    • Nanometer-structured transducers for commercial use in pharmaceutical, medical or (bio-) chemical analysis have so far been hardly accessible since they could not be produced by parallel lithography techniques at reasonable costs. We introduce here a method on. how to fabricate nanometer-structured interdigitated array electrodes including interconnections and bond pads in the micrometer range in a single imprint step on 2-in. wafer scale. The method enables the mass production of those devices at lowest cost opening a new field for the commercial use of nanometer-structured sensor systems.
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8.
  • Carlberg, Patrick, et al. (författare)
  • Lift-off process for nanoimprint lithography
  • 2003
  • Ingår i: Microelectronic Engineering. - 1873-5568 .- 0167-9317. ; 67-8, s. 203-207
  • Konferensbidrag (refereegranskat)abstract
    • We report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves the PMMA, then warm Remover S-1165 removes the LOL and remaining metal. Structures of lines down to 50 nm and dots with a diameter of sub 20 nm are presented.
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9.
  • Carlberg, Patrick, et al. (författare)
  • Nanoimprint in mr-L 6000.1 XP/PMMA resist system
  • 2002
  • Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
  • Konferensbidrag (refereegranskat)abstract
    • Use of the new resist system mr-L 6000.1 XP in combination with PMMA is demonstrated to give sub-100 nm resolution in nanoimprint lithography. Low glass transition temperature in combination with high plasma stability makes this resist suitable for achieving desirable resist profiles after the imprint process. Imprint conditions for mr-L 6000.1 XP/PMMA resist system as well as imprint results are described and discussed
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10.
  • Gómez, Víctor J., et al. (författare)
  • Wafer-scale nanofabrication of sub-100 nm arrays by deep-UV displacement Talbot lithography
  • 2020
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 31:29
  • Tidskriftsartikel (refereegranskat)abstract
    • In this manuscript, we demonstrate the potential of replacing the standard bottom anti-reflective coating (BARC) with a polymethylglutarimide (PMGI) layer for wafer-scale nanofabrication by means of deep-UV displacement talbot lithography (DTL). PMGI is functioning as a developable non-UV sensitive bottom anti-reflective coating (DBARC). After introducing the fabrication process using a standard BARC-based coating and the novel PMGI-based one, the DTL nanopatterning capabilities for both coatings are compared by means of the fabrication of etched nanoholes in a dielectric layer and metal nanodots made by lift-off. Improvement of DTL capabilities are attributed to a reduction of process complexity by avoiding the use of O2 plasma etching of the BARC layer. We show the capacity of this approach to produce nanoholes or nanodots with diameters ranging from 95 to 200 nm at a wafer-scale using only one mask and a proper exposing dose. The minimum diameter of the nanoholes is reduced from 118 to 95 nm when using the PMGI-based coating instead of the BARC-based one. The possibilities opened by the PMGI-based coating are illustrated by the successful fabrication of an array of nanoholes with sub-100 nm diameter for GaAs nanowire growth on a 2″ GaAs wafer, a 2″ nanoimprint lithography (NIL) master stamp, and an array of Au nanodots made by lift-off on a 4″ silica wafer. Therefore, DTL possess the potential for wafer-scale manufacturing of nano-engineered materials.
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