| 1. |
- Maximov, Ivan, et al.
(author)
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Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs
- 2002
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In: Nanotechnology. - : IOP Publishing. - 0957-4484. ; 13:5, s. 666-668
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Journal article (peer-reviewed)abstract
- We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are demonstrated.
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| 2. |
- Maximov, Ivan, et al.
(author)
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Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP
- 2003
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In: Microelectronic Engineering. - 1873-5568. ; 67-8, s. 196-202
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Journal article (peer-reviewed)abstract
- We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.
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| 4. |
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| 5. |
- Beck, Marc, et al.
(author)
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Improving stamps for 10 nm level wafer scale nanoimprint lithography
- 2002
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In: Microelectronic Engineering. - 1873-5568. ; 61-2, s. 441-448
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Journal article (peer-reviewed)abstract
- The smaller the features on the stamp the more important are the interactions between stamp and polymer layer. A stamp rich in small structures will effectively show a surface area enlargement, which generally leads to adhesion of the polymer to the stamp. This makes a subsequent imprint impossible without troublesome and time-consuming cleaning. The anti-adhesion properties of Si- or SiO2-based stamps can be improved by binding fluorinated silanes covalently to the surface. In this paper, we demonstrate that the deposition procedure as well as the environment during deposition are important with respect to the quality and performance of the molecular layer. (C) 2002 Published by Elsevier Science B.V.
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| 6. |
- Beck, Marc, et al.
(author)
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Nanoelectrochemical transducers for (bio-) chemical sensor applications fabricated by nanoimprint lithography
- 2004
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In: Microelectronic Engineering. - 1873-5568. ; 73-74, s. 837-842
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Journal article (peer-reviewed)abstract
- Nanometer-structured transducers for commercial use in pharmaceutical, medical or (bio-) chemical analysis have so far been hardly accessible since they could not be produced by parallel lithography techniques at reasonable costs. We introduce here a method on. how to fabricate nanometer-structured interdigitated array electrodes including interconnections and bond pads in the micrometer range in a single imprint step on 2-in. wafer scale. The method enables the mass production of those devices at lowest cost opening a new field for the commercial use of nanometer-structured sensor systems.
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| 7. |
- Carlberg, Patrick, et al.
(author)
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Lift-off process for nanoimprint lithography
- 2003
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In: Microelectronic Engineering. - 1873-5568 .- 0167-9317. ; 67-8, s. 203-207
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Conference paper (peer-reviewed)abstract
- We report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves the PMMA, then warm Remover S-1165 removes the LOL and remaining metal. Structures of lines down to 50 nm and dots with a diameter of sub 20 nm are presented.
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| 8. |
- Carlberg, Patrick, et al.
(author)
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Nanoimprint - a tool for realizing nano-bio research
- 2004
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In: 2004 4th IEEE Conference on Nanotechnology. - 0780385365 ; , s. 199-200
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Conference paper (peer-reviewed)abstract
- In this paper, we present a status report on how implementation of nanoimprint lithography has advanced our research. Contact guidance nerve growth experiments have so far primarily been done on micrometer-structured surfaces. We have made a stamp with 17 areas of different, submicron, line width and spacing covering a total 2.6 mm
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| 9. |
- Carlberg, Patrick, et al.
(author)
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Nanoimprint in mr-L 6000.1 XP/PMMA resist system
- 2002
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In: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
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Conference paper (peer-reviewed)abstract
- Use of the new resist system mr-L 6000.1 XP in combination with PMMA is demonstrated to give sub-100 nm resolution in nanoimprint lithography. Low glass transition temperature in combination with high plasma stability makes this resist suitable for achieving desirable resist profiles after the imprint process. Imprint conditions for mr-L 6000.1 XP/PMMA resist system as well as imprint results are described and discussed
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| 10. |
- Finder, C, et al.
(author)
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Fluorescence microscopy for quality control in nanoimprint lithography
- 2003
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In: Microelectronic Engineering (Proceedings of the 28th International Conference on Micro- and Nano-Engineering). - 0167-9317 .- 1873-5568. ; 67-8, s. 623-628
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Conference paper (peer-reviewed)abstract
- Fluorescence microscopy is introduced as a low cost quality control process for nanoimprint lithography. To depict imprinted structures down to 1 mum lateral size and to detect residues down to 100 nm lateral size, the standard printable polymer mr-18000 is labelled with less than 0.1 wt.% fluorescent dye. Three different types of stamps are used to determine the dependence of the shape and size of stamp features in a series of imprints. The quality of a stamp is given by the sticking polymer residues per unit area. Fluorescence light images as well as visible light images are analysed. Changes in the area of the stamp covered with polymer as a function of the number of imprints is summarised in a statistical process chart. Adhesion was artificially induced in order to observe self cleaning of virgin stamps. They were detected and monitored, suggesting that this method is a suitable technique for quality control and that it could be easily adapted to the nanoimprint process. (C) 2003 Elsevier Science B.V. All rights reserved.
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