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Träfflista för sökning "WFRF:(Maximov Ivan) ;pers:(Nilsson D)"

Sökning: WFRF:(Maximov Ivan) > Nilsson D

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1.
  • Shorubalko, Ivan, et al. (författare)
  • A novel frequency-doubling device based on three-terminal ballistic junction
  • 2002
  • Ingår i: Device Research Conference (Cat. No.02TH8606). - 0780373170 ; , s. 159-160
  • Konferensbidrag (refereegranskat)abstract
    • Summary form only given. Ballistic devices have received increasing attention for their nonlinear electrical properties, which are interesting from both physics and application points of view. Recently, novel nonlinear electrical properties of three-terminal ballistic junctions (TBJs) have been discovered theoretically and experimentally. In this work we propose and demonstrate functionality of a novel frequency-doubling device based on a three-terminal ballistic junction. The novel devices are fabricated by integrating a T-shaped TBJ and a one-dimensional (1D) lateral-field-effect transistor (lateral-FET) with trench gate-channel insulation on high-electron-mobility GaInAs/InP quantum well structures The results of the measurements show frequency doubling and gain in these novel devices at room temperature
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2.
  • Shorubalko, Ivan, et al. (författare)
  • A novel frequency-multiplication device based on three-terminal ballistic junction
  • 2002
  • Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 23:7, s. 377-379
  • Tidskriftsartikel (refereegranskat)abstract
    • In this letter, a novel frequency-multiplication device based on a three-terminal ballistic junction is proposed and demonstrated. A 100 nm-size, three-terminal ballistic junction and a one-dimensional (1-D), lateral-field-effect transistor with trench gate-channel insulation are fabricated from high-electron-mobility GaInAs/InP quantum-well material as a single device. The devices show frequency doubling and gain at room temperature. The performance of these devices up to room temperature originates from the nature of the device functionality and the fact that the three-terminal device extensions are maintained below the carrier mean-free path. Furthermore, it is expected that the device performance can be extended up to THz-range.
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  • Resultat 1-2 av 2
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tidskriftsartikel (1)
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refereegranskat (2)
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Xu, Hongqi (2)
Maximov, Ivan (2)
Seifert, Werner (2)
Samuelson, Lars (2)
Nilsson, D (2)Ta bort avgränsningen
Omling, Pär (2)
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Shorubalko, Ivan (2)
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Lunds universitet (2)
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Engelska (2)
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2002 (2)

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