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Träfflista för sökning "WFRF:(Maximov Ivan) ;pers:(Schulz H.)"

Sökning: WFRF:(Maximov Ivan) > Schulz H.

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1.
  • Maximov, Ivan, et al. (författare)
  • New high resolution negative resist mr-L 6000.1 XP for electron beam and nanoimprint lithography
  • 2002
  • Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
  • Konferensbidrag (refereegranskat)abstract
    • We present the characterization results of a new high resolution negative electron beam resist mr-L 6000.1 XP. The resist can also be used as imprintable polymer in nanoimprint lithography with sub-100 nm resolution. The feature size achieved after e-beam exposure was about 50 nm with sensitivity of 2-4 μC/cm2. Studies of the resist properties as a function of chemical composition and development conditions are also presented
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2.
  • Pfeiffer, K, et al. (författare)
  • A comparison of thermally and photochemically cross-linked polymers for nanoimprinting
  • 2003
  • Ingår i: Microelectronic Engineering. - 1873-5568. ; 67-8, s. 266-273
  • Tidskriftsartikel (refereegranskat)abstract
    • The characteristics and benefits of two types of cross-linking prepolymers with low glass transition temperature (T-g) for nanoimprinting are reported. They are soluble in organic solvents and their solutions can be processed like those of common thermoplastics. The imprinted patterns receive high thermal and mechanical stability through cross-linking polymerization. The course of the polymerization was investigated to determine the appropriate conditions for the imprint process. In thermally cross-linked polymers mr-I 9000, the cross-linking occurs during imprinting. Process time and temperature depend on the polymerization rate. Volume shrinkage during the polymerization does not adversely affect imprinting. Photochemically cross-linked polymers mr-L 6000 make possible imprint temperatures below 100 T and short imprint times. The T-g of the prepolymer determines the imprint temperature. The cross-linking reaction and structural stabilization is performed after imprinting. 50-nm trenches and sub-50-nm dots confirm the successful application of the polymers.
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3.
  • Pfeiffer, K, et al. (författare)
  • Polymer stamps for nanoimprinting
  • 2002
  • Ingår i: Microelectronic Engineering. - 1873-5568. ; 61-2, s. 393-398
  • Tidskriftsartikel (refereegranskat)abstract
    • Stamp fabrication for nanoimprinting can be significantly simplified, when specialized crosslinking polymers are applied to pattern definition. The polymer patterns can be used as stamps themselves. Two possibilities are reported: (1) An e-beam sensitive resist was developed, which enables the fabrication of polymer-on-silicon stamps. Patterns with a feature size of 70 nm could be created. (2) Full plastic stamps were obtained by a casting-moulding technique, which enable pattern transfer from any conventional mould. The quality of the two stamp variants were proved by imprinting experiments. (C) 2002 Elsevier Science B.V. All rights reserved.
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  • Resultat 1-3 av 3

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