2. |
- Sun, Jie, et al.
(författare)
-
Novel nanoelectronic device applications based on the nonlinearity of three-terminal ballistic junctions
- 2007
-
Ingår i: Physics of Semiconductors, Pts A and B. - : AIP. - 0094-243X .- 1551-7616. ; 893, s. 1471-1472
-
Konferensbidrag (refereegranskat)abstract
- Nanometer-scale electron devices containing three-terminal ballistic junctions are fabricated by electron-beam lithography on InP/InGaAs two-dimensional electron gas materials. Based on the intrinsic nonlinearity of the devices, frequency mixer, phase detector and RS flip-flop memory functioning at room temperature are successfully achieved. The devices have simple structure layout and small size, and are expected to function at high speed.
|
|