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| 2. |
- Wernersson, Lars-Erik, et al.
(författare)
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Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
- 2002
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Ingår i: Journal of Vacuum Science and Technology B. - : American Vacuum Society. - 1520-8567. ; 20:2, s. 580-589
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Tidskriftsartikel (refereegranskat)abstract
- A processing scheme for the fabrication of embedded W-GaAs contacts has been established and the resulting contact characteristics have been evaluated. The main advantage of these contacts is that they are stable during high-temperature epitaxial overgrowth. The fabrication scheme is based on a liftoff process with electron beam evaporation of tungsten and subsequent epitaxial overgrowth using metalorganic vapor phase epitaxy. Various methods were used to characterize the buried contacts. First, the structural properties of GaAs surrounding embedded W features, with widths down to 50 nm, were characterized by high-resolution transmission electron microscopy. Measurements of the conductivity in individual, buried wires were performed in order to study the influence of the overgrowth process on the properties of the tungsten. We also evaluated the current-voltage characteristics for macroscopic contacts, which revealed a clear dependence on processing parameters. Optimized processing conditions could thus be established under which limited contact degradation occurred during overgrowth. Finally, we used the overgrowth technique to perform a detailed investigation of the electrical and optical properties of floating-potential embedded nano-Schottky contacts by space-charge spectroscopy.
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| 3. |
- Suyatin, Dmitry, et al.
(författare)
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Nano-Schottky contacts realized by bottom-up technique
- 2010
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Ingår i: INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. - Piscataway, N.J. : IEEE Press. - 9781424435432 ; , s. 252-253
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Konferensbidrag (refereegranskat)abstract
- Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts. Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the InAs segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.
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| 5. |
- Skjolding, Lars Henrik, et al.
(författare)
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Characterisation of nano-interdigitated electrodes
- 2008
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Ingår i: Journal of Physics: Conference Series. - : IOP Publishing. - 1742-6596 .- 1742-6588. ; 100, s. 052045-052045
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Konferensbidrag (refereegranskat)abstract
- Interdigitated electrodes made up of two individually addressable interdigitated comb-like electrode structures have frequently been suggested as ultra sensitive electrochemical biosensors. Since the signal enhancement effects due to cycling of the reduced and oxidized species are strongly dependent on the inter electrode distances, since the nature of the enhancement is due to overlying diffusion layers, inter digitated electrodes with an electrode separation of less the non emicrometer a redesired for maximum signal amplification. Fabrication of submicron structures can only be made by advanced lithography techniques. By use of electron be amlithography we have fabricated arrays of interdigitated electrodes with an electrode separation distance of 200nm and an electrode finger width of likewise 200nm. The entire electrode structure is 100 micrometre times 100 micrometre, and the active electrode area is dictated by the opening in the passivation layer, that is defined by UV lithography. Here we report measurements of redox cycling of ferrocyanide by coupled cyclic voltammograms, where the potential atone of the working electrodes are varied and either an oxidising or reducing potential is applied to the complimentary interdigitated electrode. The measurements show fast conversion and high collection efficiency round 87% as expected for nano-interdigitated electrodes.
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| 9. |
- Suyatin, Dmitry, et al.
(författare)
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Gallium phosphide nanowire arrays and their possible application in cellular force investigations
- 2009
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Ingår i: Journal of Vacuum Science and Technology B. - : American Vacuum Society. - 1520-8567. ; 27:6, s. 3092-3094
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Tidskriftsartikel (refereegranskat)abstract
- The authors report the fabrication of gallium phosphide nanowire arrays that can be used for cellular force measurements. The nanowire positions are defined using electron beam lithography and the nanowires are grown using metal organic vapor phase epitaxy. By varying the nanowire diameter, length, and spacing from substrate to substrate, they can expect to probe cell forces over several orders of magnitude, depending on the chosen substrate. The small diameter of the nanowires allows them to densely pack the array and to achieve unprecedented spatial resolution for future cell force-array applications.
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| 10. |
- Bordag, Michael, et al.
(författare)
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Shear stress measurements on InAs nanowires by AFM manipulation
- 2007
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Ingår i: Small. - Weinheim : Wiley-VCH Verlagsgesellschaft. - 1613-6810 .- 1613-6829. ; 3:8, s. 1398-1401
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Tidskriftsartikel (refereegranskat)abstract
- On an upward curve? The curvature of an elastically deformed nanowire pinned to a flat surface contains information about the maximum static friction force, and hence the shear stress, between the nanowire and the surface. Here, InAs nanowires are bent in a controlled manner using the tip of an atomic force microscope (see image). The shear stress can be obtained from a simple analysis according to the standard theory of elasticity.
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