| 1. |
- Benisty, H., et al.
(författare)
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Low-loss photonic-crystal and monolithic InP integration : Bands, bends, lasers, filters
- 2004
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Ingår i: Photonic Crystal Materials and Devices II. - : SPIE - International Society for Optical Engineering. - 0819452688 ; , s. 119-128
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Konferensbidrag (refereegranskat)abstract
- Practical realizations of 2D (planar) photonics crystal (PhC) are either on a membrane or etched through a conventional heterostructure. While fascinating objects can emerge from the first approach, only the latter approach lends itself to a progressive integration of more compact PhC's towards monolithic PICs based on InP. We describe in this talk the various aspects from technology to functions and devices, as emerged from the European collaboration "PCIC". The main technology tour de force is deep-etching with aspect ratio of about 10 and vertical sidewall, achieved by three techniques (CAIBE, ICP-RIE, ECR-RIE). The basic functions explored are bends, splitters/combiners, mirrors, tapers, and the devices are filters and lasers. At the end of the talk, I will emphasize some positive aspects of "broad" multimode PhC waveguides, in view of compact add-drop filtering action, notably.
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| 2. |
- Talneau, A., et al.
(författare)
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Modal behavior of single-line photonic crystal guiding structures on InP substrate
- 2004
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Ingår i: Photonics and Nanostructures - Fundamentals and Applications. - : Elsevier BV. - 1569-4410 .- 1569-4429. ; 2:1, s. 1-10
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Tidskriftsartikel (refereegranskat)abstract
- We have experimentally investigated the modal behaviour and the polarization dependence of the transmission through single-missing-row photonic crystal (PC) straight guides, bends and combiners, fabricated on InP substrate. A photonic crystal-based taper has been included to funnel light in these strongly confined structures. Two-dimensional finite-difference time-domain simulations have been performed and favorably compared with the measurements. It is found that the scattering process occurring at a bend/combiner transition plays a key role on the overall transmission.
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| 3. |
- Mogg, S., et al.
(författare)
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High-performance 1.2-ÎŒm Highly strained InGaAs/GaAs quantum well lasers
- 2002
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - Stockholm. ; , s. 107-110
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Konferensbidrag (refereegranskat)abstract
- The growth and characterisation of high-performance 1.2-Όm highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145°C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli.
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| 4. |
- Mogg, Sebastian, et al.
(författare)
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High-performance 1.2- mu;m highly strained InGaAs/GaAs quantum well lasers
- 2002
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Ingår i: Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. ; , s. 107-110
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Konferensbidrag (refereegranskat)abstract
- The growth and characterisation of high-performance 1.2- mu;m highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145 deg;C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli (1975).
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| 5. |
- Wild, B., et al.
(författare)
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Temperature tuning of the optical properties of planar photonic crystal microcavities
- 2004
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Ingår i: Proc SPIE Int Soc Opt Eng. - : SPIE. ; , s. 311-317
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Konferensbidrag (refereegranskat)abstract
- We report on the temperature tuning of the optical properties of planar Photonic Crystal (PhC) microcavities. Studies were made on one and two dimensional PhCs that were etched in InP and GaAs vertical waveguides. Two dimensional (hexagonal) and one-dimensional (Fabry-Pérot) cavities were optically investigated by an internal light source technique. The samples were mounted on a Peltier-stage which allowed temperature variation from T = 20 °C up to T = 76 °C. A linear dependence of the resonance wavelengths with respect to temperature is observed. A gradient of dλ/dT = 0.09 nm/°C and 0.1 nm/°C for the GaAs and InP based cavities was observed, respectively. These results are in agreement with the theoretical calculations based on the thermal dependence of the refractive index of the PhC semiconductor component.
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