| 1. |
- Nilsson, Per-Åke, 1964, et al.
(författare)
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Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process
- 2016
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Ingår i: Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015. ; 1, s. Art. no. 7411746-
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Konferensbidrag (refereegranskat)abstract
- An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogenic temperatures. The process was run on 4” wafers and utilized 130 nm gate-length HEMTs. Several wide band LNAs were made in a frequency range between 1 GHz and 100 GHz. A Ka band LNA had a minimum noise temperature of 10 K and a gain of 35 dB.
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| 2. |
- Nilsson, Per-Åke, 1964, et al.
(författare)
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An InP MMIC process optimized for low noise at Cryo
- 2014
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Ingår i: Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. - 1550-8781. - 9781479936229
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Konferensbidrag (refereegranskat)abstract
- An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at cryogenic temperature. The amplifiers from the process are working up to 100 GHz. The processed wafers are 4" and can carry more than 4000 3-stage units. For a significant number of 6-20 GHz 3-stage LNAs we have measured an average noise temperature of 5.8 K at ambient temperature of 10 K, state of the art in this frequency range, and 66.3 K at 300K. Associated gain was 35.9 dB (10K) and 33.2 dB (300 K). The standard deviation at room temperature for 47 LNAs was 1.5 K for the noise and 0.3 dB for the gain.
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| 3. |
- Schleeh, Joel, 1986, et al.
(författare)
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Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature
- 2012
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
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Konferensbidrag (refereegranskat)abstract
- A 0.5-13 GHz cryogenic MMIC low-noise amplifier (LNA) was designed and fabricated using a 130 nm InP HEMT process. A packaged LNA has been measured at both 300 K and 15 K. At 300 K the measured minimum noise temperature was 48 K at 7 GHz. At 15 K the measured minimum noise temperature was 3 K at 7 GHz and below 7 K within the entire 0.5-13 GHz band. The gain was between 34 dB and 40 dB at 300 K and between 38 dB and 44 dB at 4 K.
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| 4. |
- Schleeh, Joel, 1986, et al.
(författare)
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Cryogenic LNAs for SKA band 2 to 5
- 2017
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781509063604 ; , s. 164-167
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Konferensbidrag (refereegranskat)abstract
- Four ultra-low noise cryogenic MMIC LNAs suitable for the Square Kilometer Array (SKA) band 2 to 5 (0.95-13.8 GHz) have been designed, fabricated, packaged and tested. The LNAs are based on 4×50, 8×50 and 16×50 μm HEMTs, designed for stable cryogenic operation, allowing the combination of good noise performance and return loss. The lowest noise temperatures measured in the four bands were 1.0 K, 1.2 K, 1.6 K and 2.6 K, respectively.
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| 5. |
- Andersson, Kristoffer, 1976, et al.
(författare)
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Fabrication and characterization of field-plated buried-gate SiC MESFETs
- 2006
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 27:7, s. 573-575
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Tidskriftsartikel (refereegranskat)abstract
- Silicon carbide (SiC) MESFETs were fabricated using a standard SiC MESFET structure with the application of the "buried-channel" and field-plate (FP) techniques in the process. FPs combined with a buried-gate are shown to be favorable concerning output power density and power-added efficiency (PAE), due to higher breakdown voltage and decreased output conductance. A very high power density of 7.8 W/mm was measured on-wafer at 3 GHz for a two-finger 400-/spl mu/m gate periphery SiC MESFET. The PAE for this device was 70% at class AB bias. Two-tone measurements at 3 GHz /spl plusmn/ 100 kHz indicate an optimum FP length for high linearity operation.
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| 6. |
- Sudow, Mattias, 1980, et al.
(författare)
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The Chalmers microstrip SiC MMIC Process
- 2005
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Ingår i: Conference Proceedings Gighahertz 2005.
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Konferensbidrag (refereegranskat)abstract
- A generic microstrip MMIC process targeted for SiC and GaN technology has beendeveloped. Passive components for high power operation were developed and verified. Circuit modelsfor both passive and active components have been formulated. Using the developed MMIC process anamplifier and a limiter have been manufactured.
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| 7. |
- Moschetti, Giuseppe, 1982, et al.
(författare)
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Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs
- 2012
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Ingår i: 15th European Microwave Week - Space for Microwaves Conference Proceedings. Amsterdam, NETHERLANDS. OCT 28-NOV 02, 2012. - 9782874870286 ; , s. 373-376
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Konferensbidrag (refereegranskat)abstract
- The suitability of InAs/AlSb HEMTs for cryogenic ultra low-power applications is investigated. Compared to room temperature, the device exhibited significantly improved drain current saturation, higher peak transconductance and lower gate current leakage at around 10 K. When tested in a three-stage hybrid 4-8 GHz LNA under cryogenic conditions, the LNA noise figure was 0.27 dB at an extremely low power consumption of 0.6 mW per stage.
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| 8. |
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| 9. |
- Gosztonyi, Susanne, et al.
(författare)
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Multi-active façade for refurbishments of residential buildings
- 2016
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Ingår i: Journal of Façade Design and Engineering. - 2213-3038. ; 4:3
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Tidskriftsartikel (refereegranskat)abstract
- This article reflects results from the technology screening and analyses of passive and active measures applied to large scale residential building refurbishments, focusing on the facade. This work is part of the research study ‘multi-active façade' that focuses on the development of an innovative facade concept suitable for the refurbishment challenges that the ambitious Swedish housing programme "Miljonprogrammet" of the 1960s to 1970s is facing now. The objective is to identify those measures for energy efficient facade refurbishments of a building concept that uses multifunctional solutions, while an upgrading towards a highly energy efficient standard is economically limited. Two criteria are in the centre of the investigations: “Multi-active” and “prefabrication” in the realm of cost-effectiveness and minimal-invasive refurbishment. Hereby, "passive" measures, such as adaptive thermal insulation or thermal puffer zones useable as extended living areas, are analysed in the context of their performance effectiveness in cold climates. The potential of “active” measures, such as semi-decentralized ventilation or solar energy technologies, is analysed in regards to utilize existing infrastructure, decentralized functionality and local sources at its optimum. All measures shall provide a high comfort and performance out of the façade. The facade is also meant to be a “plug and play” system allowing fast mounting and high archi-tectural flexibility. Framing criteria are sustainability and - critical for the success of refurbishments – economic replicability. The benefits of such energy renovation, often not considered in the decision making process, shall become visible by life cycle assessments and performance analyses. The analyses in this article contributes to the ongoing process in these goals, drawing conclusions for the replicability of selected active and passive solutions.
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| 10. |
- Gudjonsson, Gudjon, 1973, et al.
(författare)
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High Power Density 4H-SiC RF MOSFETs
- 2006
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Ingår i: IEEE Electron Device Letters. ; 527-529, s. 1277-1280
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Tidskriftsartikel (refereegranskat)
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