| 1. |
- Fröberg, Linus, et al.
(författare)
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Vertical InAs nanowire wrap-gate FETs
- 2006
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Ingår i: Book of abstracts: Semicond Nanowires Symp, Eindhoven, The Netherlands (2006).
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Konferensbidrag (refereegranskat)
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| 2. |
- Movérare-Skrtic, Sofia, et al.
(författare)
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Osteoblast-derived WNT16 represses osteoclastogenesis and prevents cortical bone fragility fractures.
- 2014
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Ingår i: Nature Medicine. - : Springer Science and Business Media LLC. - 1078-8956 .- 1546-170X. ; 20:11, s. 1279-88
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Tidskriftsartikel (refereegranskat)abstract
- The WNT16 locus is a major determinant of cortical bone thickness and nonvertebral fracture risk in humans. The disability, mortality and costs caused by osteoporosis-induced nonvertebral fractures are enormous. We demonstrate here that Wnt16-deficient mice develop spontaneous fractures as a result of low cortical thickness and high cortical porosity. In contrast, trabecular bone volume is not altered in these mice. Mechanistic studies revealed that WNT16 is osteoblast derived and inhibits human and mouse osteoclastogenesis both directly by acting on osteoclast progenitors and indirectly by increasing expression of osteoprotegerin (Opg) in osteoblasts. The signaling pathway activated by WNT16 in osteoclast progenitors is noncanonical, whereas the pathway activated in osteoblasts is both canonical and noncanonical. Conditional Wnt16 inactivation revealed that osteoblast-lineage cells are the principal source of WNT16, and its targeted deletion in osteoblasts increases fracture susceptibility. Thus, osteoblast-derived WNT16 is a previously unreported key regulator of osteoclastogenesis and fracture susceptibility. These findings open new avenues for the specific prevention or treatment of nonvertebral fractures, a substantial unmet medical need.
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| 3. |
- Rehnstedt, Carl, et al.
(författare)
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Drive current and threshold voltage control in vertical InAs wrap-gate transistors
- 2008
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 44:3, s. 236-237
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Tidskriftsartikel (refereegranskat)abstract
- Results on fabrication and DC-characterisation of vertical InAs nanowire wrap-gate field-effect transistor arrays with a gate length of 50 nm are presented. Each nanowire array was processed into a transistor with a systematic variation in a number of wires and wire diameter over the sample. Extensive studies have been performed on the influence of wire number and diameter on the transistor characteristics due to a high device yield (84%). In particular it is shown that the threshold voltage depends on the wire diameter, with a change in the order of 5 mV/nm. These results show the possibility of changing the transistor characteristics on the sample by altering the wire dimensions, still using only one patterning and growth sequence.
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| 4. |
- Thelander, Claes, et al.
(författare)
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Development of a Vertical Wrap-Gated InAs FET
- 2008
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383. ; 55:11, s. 3030-3036
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control in situ doping, high-kappa dielectric deposition, spacer layer formation: and metal wrap-gate fabrication. In particular, we compare a few alternative methods for deposition of materials onto vertical structures and discuss their potential advantages and limitations. Finally, we also present a comparison of transistor performance for nanowires grown using two different epitaxial techniques.
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| 5. |
- Björk, Mikael, et al.
(författare)
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One-dimensional steeplechase for electrons realized
- 2002
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 2:2, s. 87-89
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Tidskriftsartikel (refereegranskat)abstract
- We report growth of one-dimensional semiconductor nanocrystals, nanowhiskers, in which segments of the whisker with different composition are formed, illustrated by InAs whiskers containing segments of InP. Our conditions for growth allow the formation of abrupt interfaces and heterostructure barriers of thickness from a few monolayers to 100s of nanometers, thus creating a one-dimensional landscape along which the electrons move. The crystalline perfection, the quality of the interfaces, and the variation in the lattice constant are demonstrated by high-resolution transmission electron microscopy, and the conduction band off-set of 0.6 eV is deduced from the current due to thermal excitation of electrons over an InP barrier.
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| 6. |
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| 7. |
- Ivarson, Anders, et al.
(författare)
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Optimisation of the laser cutting process for thin section stainless steels
- 1992
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Ingår i: Proceedings of the laser materials processing symposium. - Orlando, Fla : Laser institute of America. - 9780912035451 ; , s. 211-220
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Konferensbidrag (refereegranskat)abstract
- This paper presents the results of an experimental program investigating the effects of using a pulsed laser for laser-oxygen cutting of thin section stainless steels. It was discovered that if the pulse conditions are optimised, the maximum cutting speed for a set average laser power could be increased by up to 15%. This increase in cutting speed was made possible by a change in the material removal mechanism in the cut zone. The steady state melting-oxidation-ejection process was replaced by a periodic expulsion of melt as a result of small 'explosions' caused by the spike at the beginning of each laser pulse
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| 8. |
- Ivarson, A., et al.
(författare)
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Reflection phenomena in Co2 laser cutting
- 1997
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Ingår i: Proceedings of the 6th Nordic Laser Material Processing Conference, Luleå, Sweden, August 27-29, 1997. - Luleå : Luleå tekniska universitet. ; , s. 16-24
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Konferensbidrag (refereegranskat)
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| 9. |
- Ohlsson, L., et al.
(författare)
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Comparison between abrasive water jet cutting and laser cutting
- 1991
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Ingår i: Journal of laser applications. - : Laser Institute of America. - 1042-346X .- 1938-1387. ; 3:3, s. 46-50
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Tidskriftsartikel (refereegranskat)abstract
- This paper is intended to demonstrate the advantages and disadvantages of laser profiling techniques as compared with the Abrasive Water Jet (AWJ). The growth of AWJ as a cutting tool has provided engineers with a new profiling technique which often offers great technical and commercial advantages over more traditional methods. However, AWJ cutting is not the best solution to all profiling problems. There are a number of techniques which compete with or complement the process and the optimum profiling method can be difficult to identify. The following paper serves as a general guide-line comparing two competitive cutting methods (CO2 laser cutting and Nd: YAG laser cutting) with AWJ cutting. The subject of cutting covers a great many more processes than can be reviewed in one article but the techniques to be discussed were chosen because they all involve profiling using an axially symmetric energy beam of some sort
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| 10. |
- Ohlsson, L., et al.
(författare)
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Mechanisms of striation formation in abrasive water jet cutting
- 1994
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Ingår i: 12th International Conference on Jet Cutting Technology. - London : Institution of Mechanical Engineers. - 0852989253 ; , s. 151-164
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Konferensbidrag (refereegranskat)abstract
- In an experimental program investigating cut edge striation generation during AWJ (abrasive water jet) cutting, mild steel and aluminium alloy samples have been cut with a range of process parameters and the resulting cut edge striation carefully analysed to develop a phenomenological model of striation generation based on variations in the geometry of the cut front. The existence of a range of moving steps on the cut front has been confirmed by the use of high speed video recording of the cut front when cutting transparent materials.
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