| 1. |
- Arnalds, U. B., et al.
(författare)
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A magnetron sputtering system for the preparation of patterned thin films and in situ thin film electrical resistance measurements
- 2007
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Ingår i: Review of Scientific Instruments. - : AIP Publishing. - 0034-6748 .- 1089-7623. ; 78:10, s. 103901-
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Tidskriftsartikel (refereegranskat)abstract
- We describe a versatile three gun magnetron sputtering system with a custom made sample holder for in situ electrical resistance measurements, both during film growth and ambient changes on film electrical properties. The sample holder allows for the preparation of patterned thin film structures, using up to five different shadow masks without breaking vacuum. We show how the system is used to monitor the electrical resistance of thin metallic films during growth and to study the thermodynamics of hydrogen uptake in metallic thin films. Furthermore, we demonstrate the growth of thin film capacitors, where patterned films are created using shadow masks.
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| 2. |
- Gylfason, Kristinn B., 1978-, et al.
(författare)
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In-situ resistivity measurements during growth of ultra-thin Cr_0.7Mo_0.3
- 2006
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 515:2, s. 583-586
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Tidskriftsartikel (refereegranskat)abstract
- The growth of ultra-thin, lattice matched, Cr0.7Mo0.3 films on an MgO substrate, in a dc magnetron discharge, was investigated by in situ measurements in order to determine the minimum thickness of a continuous layer. The thickness dependence of the resistivity shows a coalescence thickness of less than two monolayers indicating layer by layer growth of the films. We compare the resistivity of the films to a combination of the Fuchs- Sondheimer and the Mayadas-Shatzkes models, assuming a thickness dependence of grain size. The model indicates that grain size increases with increasing growth temperature.
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| 3. |
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| 4. |
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| 5. |
- Leosson, K., et al.
(författare)
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Comparing resonant photon tunneling via cavity modes and Tamm plasmon polariton modes in metal-coated Bragg mirrors
- 2012
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Ingår i: Optics Letters. - 0146-9592 .- 1539-4794. ; 37:19, s. 4026-4028
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Tidskriftsartikel (refereegranskat)abstract
- Resonant photon tunneling was investigated experimentally in multilayer structures containing a high-contrast (TiO2/SiO2) Bragg mirror capped with a semitransparent gold film. Transmission via a fundamental cavity resonance was compared with transmission via the Tamm plasmon polariton resonance that appears at the interface between a metal film and a one-dimensional photonic bandgap structure. The Tamm-plasmon-mediated transmission exhibits a smaller dependence on the angle and polarization of the incident light for similar values of peak transmission, resonance wavelength, and finesse. Implications for transparent electrical contacts based on resonant tunneling structures are discussed.
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| 6. |
- Shayestehaminzadeh, S., et al.
(författare)
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Ultra-thin poly-crystalline TiN films grown by HiPIMS on MgO(100) - In-situ resistance study of the initial stage of growth
- 2013
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 549, s. 199-203
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Tidskriftsartikel (refereegranskat)abstract
- The growth of ultra-thin TiN films on single-crystalline MgO(100) substrates by high power impulse magnetron sputtering (HiPIMS) was studied for growth temperatures ranging from 35 degrees C to 600 degrees C. X-ray analysis showed that the films had a textured poly-crystalline structure. Films grown by dc magnetron sputtering (dcMS) were epitaxial at the higher growth temperatures. In-situ resistance measurements, during growth, revealed the coalescence thickness and film continuity thickness. The film grown by HiPIMS at room temperature coalesced at 1.2 +/- 0.1 nm and became structurally continuous at 2.67 +/- 0.15 nm. At 600 degrees C, the coalescence and continuity thicknesses decreased to 0.56 +/- 0.05 nm and 0.82 +/- 0.05 nm, respectively. X-ray reflectivity measurements revealed that the growth rate of the films was roughly constant for all growth temperatures. The film density increased slightly with growth temperature up to 5.3 g/cm(3) at 600 degrees C and the surface roughness of the films decreased from 1 nm to 0.3 nm while the growth temperature increased from 35 degrees C to 600 degrees C. Grazing incident X-ray diffraction measurements showed the presence of [111], [200] and [220] crystallites at all growth temperatures. The smallest [200] and [220] grain sizes appeared at 100 degrees C while the [200] grain size increased by increasing the growth temperature.
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| 7. |
- Magnus, F, et al.
(författare)
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Morphology of TiN thin films grown on SiO(2) by reactive high power impulse magnetron sputtering
- 2011
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 520:5, s. 1621-1624
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Tidskriftsartikel (refereegranskat)abstract
- Thin TiN films were grown on SiO(2) by reactive high power impulse magnetron sputtering (HiPIMS) at a range of temperatures from 45 to 600 degrees C. The film properties were compared to films grown by conventional dc magnetron sputtering (dcMS) at similar conditions. Structural characterization was carried out using X-ray diffraction and reflection methods. The HiPIMS process produces denser films at lower growth temperature than does dcMS. Furthermore, the surface is much smoother for films grown by the HiPIMS process. The [200] grain size increases monotonically with increased growth temperature, whereas the size of the [111] oriented grains decreases to a minimum for a growth temperature of 400 degrees C after which it starts to increase with growth temperature. The [200] crystallites are smaller than the [111] crystallites for all growth temperatures. The grain sizes of both orientations are smaller in HiPIMS grown films than in dcMS grown films.
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