| 1. |
- Fallqvist, Mikael, et al.
(författare)
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Nucleation And Growth Of Cvd α-Al2O3 On TiXOY Template
- 2012
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Ingår i: Surface & Coatings Technology. - : Elsevier. - 0257-8972 .- 1879-3347. ; 207, s. 254-261
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Tidskriftsartikel (refereegranskat)abstract
- The microstructure, phase and chemical composition of TixOy templates used to nucleate α-Al2O3 on Ti(C,N) coated cemented carbide have been elucidated using scanning electron microscopy, X-ray diffraction, Auger electron spectroscopy and Time-of-Flight Secondary Ion Mass Spectrometry. Further, the adhesive strength of the α-Al2O3–TixOy–Ti(C,N) interfaces was investigated using scratch adhesion testing.The present study confirmed that the as-deposited template consisted of a Ti4O7 phase which during subsequent deposition of the Al2O3 layer transformed to a Ti3O5 phase and that the grown Al2O3 layer consisted of 100% α-Al2O3. Furthermore, the results showed that the lowest interfacial strength within the multilayer structure was exhibited by the Ti(C,N)–TixOy interface and that the transformation of Ti4O7 to Ti3O5 in the template resulted in formation of pores in the Ti(C,N)-template interface lowering the interfacial strength even more. The use of surface analysis techniques such as Auger electron spectroscopy and especially Time-of-Flight Secondary Ion Mass Spectrometry enabled trace element analyses using depth profiling to characterise the thin interfacial layers in detail.
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| 2. |
- Ahlén, Anders, et al.
(författare)
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Wireless IP - a new PCC project
- 1999
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Ingår i: Proc. PCC Workshop, Lund, Sweden. ; , s. 100-101
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Konferensbidrag (refereegranskat)
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| 3. |
- Boman, Mats, et al.
(författare)
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Corrosion of copper in water free from molecular oxygen
- 2014
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Ingår i: Corrosion Engineering, Science and Technology. - 1478-422X .- 1743-2782. ; 49:6, s. 431-434
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Tidskriftsartikel (refereegranskat)abstract
- The possibility of copper reacting with O-2-free water has been investigated by analysis of primary corrosion products, as well as by monitoring gas pressure change by time, in long term experiments for up to 6 months in a glove box environment. We establish hydrogen production, but being of the same magnitude irrespective whether copper is present or not. Although low, the hydrogen production rate is considerably larger than what would directly correspond to the amount of analysed copper oxidation products. Our analyses encompass the changes to the surface cleaned copper (99.9999%), the water phase and the Duran glass in contact with the water (ppt quality). We have used very sensitive methods (XPS, AES, ICP-MS, XRF) while keeping contamination risks to a minimum. We conclude that the oxidation rate of copper is very low, yielding only parts of a monolayer of Cu2O after 6 months of exposure at 50 degrees C together with an accompanying very low concentration of copper species (4-5 mu g L-1) in the water phase.
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| 4. |
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| 5. |
- Chulapakorn, Thawatchart, 1988-, et al.
(författare)
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Luminescence of silicon nanoparticles from oxygen implanted silicon
- 2018
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Ingår i: Materials Science in Semiconductor Processing. - : Elsevier. - 1369-8001 .- 1873-4081. ; 86, s. 18-22
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Tidskriftsartikel (refereegranskat)abstract
- Oxygen with a kinetic energy of 20 keV is implanted in a silicon wafer (100) at different fluences, followed by post-implantation thermal annealing (PIA) performed at temperatures ranging from 1000 to 1200 degrees C, in order to form luminescent silicon nanoparticles (SiNPs) and also to reduce the damage induced by the implantation. As a result of this procedure, a surface SiOx layer (with 0 < x < 2) with embedded crystalline Si nanoparticles has been created. The samples yield similar luminescence in terms of peak wavelength, lifetime, and absorption as recorded from SiNPs obtained by the more conventional method of implanting silicon into silicon dioxide. The oxygen implantation profile is characterized by elastic recoil detection (ERD) technique to obtain the excess concentration of Si in a presumed SiO2 environment. The physical structure of the implanted Si wafer is examined by grazing incidence X-ray diffraction (GIXRD). Photoluminescence (PL) techniques, including PL spectroscopy, time-resolved PL (TRPL), and photoluminescence excitation (PLE) spectroscopy are carried out in order to identify the PL origin. The results show that luminescent SiNPs are formed in a Si sample implanted by oxygen with a fluence of 2 x 10(17) atoms cm(-2) and PIA at 1000 degrees C. These SiNPs have a broad size range of 6-24 nm, as evaluated from the GIXRD result. Samples implanted at a lower fluence and/or annealed at higher temperature show only weak defect-related PL. With further optimization of the SiNP luminescence, the method may offer a simple route for integration of luminescent Si in mainstream semiconductor fabrication.
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| 6. |
- Fagerberg, Linn, et al.
(författare)
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Analysis of the human tissue-specific expression by genome-wide integration of transcriptomics and antibody-based proteomics
- 2014
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Ingår i: Molecular & Cellular Proteomics. - 1535-9476 .- 1535-9484. ; 13:2, s. 397-406
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Tidskriftsartikel (refereegranskat)abstract
- Global classification of the human proteins with regards to spatial expression patterns across organs and tissues is important for studies of human biology and disease. Here, we used a quantitative transcriptomics analysis (RNA-Seq) to classify the tissue-specific expression of genes across a representative set of all major human organs and tissues and combined this analysis with antibody- based profiling of the same tissues. To present the data, we launch a new version of the Human Protein Atlas that integrates RNA and protein expression data corresponding to 80% of the human protein-coding genes with access to the primary data for both the RNA and the protein analysis on an individual gene level. We present a classification of all human protein-coding genes with regards to tissue-specificity and spatial expression pattern. The integrative human expression map can be used as a starting point to explore the molecular constituents of the human body.
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| 7. |
- Fallberg, Anna, et al.
(författare)
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A NEXAFS and XPS study of oxygen doped Cu3N
- 2024
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Ingår i: Journal of Physics D. - : IOP Publishing Ltd. - 0022-3727 .- 1361-6463.
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Tidskriftsartikel (refereegranskat)abstract
- Thin films of pure and oxygen doped Cu3N, deposited by Chemical Vapour Deposition, have been studied with the NEXAFS technique both in the FLY and TEY mode and compared with XPS results. Cu, CuO and Cu2O have been used as reference samples in the investigation for detection of surface oxidation and contaminants. The aim has been to investigate how and if the chemical environment changes around Cu, N and O upon incorporation of oxygen in the Cu3N lattice. The recorded NEXAFS spectra are discussed in terms of valence electrons, crystal structure and local bonding environment. It was found that basically two oxygen absorption sites are possible in the crystal structure, (½, ½, 0) and (¼, ¼, ¼), and that the oxygen distribution between the two sites is probably given by the oxygen concentration.
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| 8. |
- Fallberg, Anna, 1980-
(författare)
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Chemical Vapour Deposition of Undoped and Oxygen Doped Copper (I) Nitride
- 2010
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- In science and technology there is a steadily increased demand of new materials and new materials production processes since they create new application areas as well as improved production technology and economy. This thesis includes development and studies of a chemical vapour deposition (CVD) process for growth of thin films of the metastable material copper nitride, Cu3N, which is a semiconductor and decomposes at around 300 oC. The combination of these properties opens for a variety of applications ranging from solar cells to sensor and information technology. The CVD process developed is based on a metal-organic compound copper hexafluoroacetylacetonate, Cu(hfac)2 , ammonia and water and was working at about 300 oC and 5 Torr. It was found that a small amount of water in the vapour increased the growth rate considerably and that the phase content, film texture, chemical composition and morphology were strongly dependent on the deposition conditions. In-situ oxygen doping during the CVD of Cu3N to an amount of 9 atomic % could also be accomplished by increasing the water concentration in the vapour. Oxygen doping increases the band gap of the material as well as the electrical resistivity and changes the stability. The crystal structure of Cu3N is very open and contains several sites which can be used for doping. Different spectroscopic techniques like X-ray photoelectron spectroscopy, Raman spectroscopy and near edge X-ray absorption fine structure spectroscopy were used to identify the oxygen doping site(s) in Cu3N. Besides the properties, the oxygen doping also affected the morphology and texture of the films. By combining thin layers of different materials several properties can be optimized at the same time. It has been demonstrated in this thesis that multilayers, composed of alternating Cu3N and Cu2O layers, i.e. a metastable and a stable material, could be grown by CVD technique. However, the stacking sequence affected the texture, morphology and chemical composition. The interfaces between the different layers were sharp and no signs of decomposition of the initially deposited metastable Cu3N layer could be detected.
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| 9. |
- Fallberg, Anna, et al.
(författare)
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CVD of Copper(I) Nitride
- 2009
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Ingår i: Chemical Vapor Deposition. - Weinheim : WILEY-VCH Verlag GmbH & Co. - 0948-1907 .- 1521-3862. ; 15:10-12, s. 300-305
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Tidskriftsartikel (refereegranskat)abstract
- Copper(I) nitride (Cu3N) is deposited by CVD using copper(II) hexafluoroacetylacetonate (Cu(hfaC)(2)), ammonia, and water as precursors. The influences of process parameters on growth rate, phase content, chemical composition and morphology are studied. The introduction of water is found to increase film growth rate on the SiO2 substrate. Films are deposited in the temperature range 250-550 degrees C. Single-phase Cu3N is obtained up to 400 degrees C. A phase mixture Of Cu3N and Cu is obtained at 425 degrees C, while a temperature of 550 degrees C and above yields single-phase Cu. X-ray diffraction (XRD) confirms that Cu3N has the cubic, anti-ReO3-type structure; with a cell parameter in the range 3.805-3.816 angstrom. X-ray photoelectron spectroscopy (XPS) verifies the Cu3N stoichiometry. The films are free from impurities (below the detection limit of 1%) at a large excess of ammonia. Scanning electron microscopy (SEM) shows facetted grains, with the faces becoming more well-defined at higher temperatures.
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| 10. |
- Fallberg, Anna, et al.
(författare)
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Deposition and characterisation of Cu2O/Cu3N multilayers
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Multilayers of Cu2O and Cu3N were successfully deposited by the CVD technique on SiO2 substrates. For deposition of the Cu3N layers Cu(hfac)2 and NH3 and for the Cu2O layers Cu(hfac)2 and H2O were used as precursors, respectively. The multilayers were deposited at 300 °C with different stacking sequences, starting with either the oxide or the nitride. In order to analyze and determine phase, texture, chemical composition and microstructure, the films were characterized by XRD, XPS and SEM. Results from GI-XRD measurements at different incidence angles show distinct Cu2O and Cu3N layers. No contaminations in the form of carbon or fluorine originating from the MO precursor were found by XPS technique. The XPS results also reveal that the Cu3N phase contained oxygen (for the Cu2O on top of Cu3N). The oxygen is expected to originate from exposure of the Cu3N surface to water vapour upon starting the Cu2O deposition. The cross section microstructure was studied by SEM. It was found that columnar growth occurred for both Cu2O/Cu3N and Cu3N/Cu2O/Cu3N films.
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