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- Olander, Jenny, et al.
(författare)
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Laser-Assisted Atomic Layer Deposition of Boron Nitride Thin Films
- 2005
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Ingår i: Chemical Vapor Deposition. - : Wiley. - 0948-1907 .- 1521-3862. ; 11, s. 330-337
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Tidskriftsartikel (refereegranskat)abstract
- Boron nitride thin films have been grown by both laser-assisted, and conventional atomic layer deposition (LALD/ALD) at temperatures in the range 250-750 °C. Both the NH3 and BBr3 precursors were appreciably dissociated by the ArF excimer laser, and up to 600 °C, the growth rate was 100 % higher for the LALD process than for ALD. The films consisted of hydrogen-terminated turbostratic BN grains. H2 was theoretically found to bind as strongly as BBrX and NHX (X = 0-2) to hBN(100) edges. The fresh films were stoichiometric with respect to B and N, and contained low degrees of contamination, but oxidized easily in air.
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