| 1. |
- Fallberg, Anna, et al.
(författare)
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CVD of Copper(I) Nitride
- 2009
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Ingår i: Chemical Vapor Deposition. - Weinheim : WILEY-VCH Verlag GmbH & Co. - 0948-1907 .- 1521-3862. ; 15:10-12, s. 300-305
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Tidskriftsartikel (refereegranskat)abstract
- Copper(I) nitride (Cu3N) is deposited by CVD using copper(II) hexafluoroacetylacetonate (Cu(hfaC)(2)), ammonia, and water as precursors. The influences of process parameters on growth rate, phase content, chemical composition and morphology are studied. The introduction of water is found to increase film growth rate on the SiO2 substrate. Films are deposited in the temperature range 250-550 degrees C. Single-phase Cu3N is obtained up to 400 degrees C. A phase mixture Of Cu3N and Cu is obtained at 425 degrees C, while a temperature of 550 degrees C and above yields single-phase Cu. X-ray diffraction (XRD) confirms that Cu3N has the cubic, anti-ReO3-type structure; with a cell parameter in the range 3.805-3.816 angstrom. X-ray photoelectron spectroscopy (XPS) verifies the Cu3N stoichiometry. The films are free from impurities (below the detection limit of 1%) at a large excess of ammonia. Scanning electron microscopy (SEM) shows facetted grains, with the faces becoming more well-defined at higher temperatures.
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| 2. |
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| 3. |
- Intarasiri, Saweat, et al.
(författare)
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Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide
- 2007
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 101:8, s. 084311-
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Tidskriftsartikel (refereegranskat)abstract
- Ion beam synthesis using high-fluence carbon ion implantation in silicon in combination with subsequent or in situ thermal annealing has been shown to be able to form nanocrystalline cubic SiC (3C-SiC) layers in silicon. In this study, a silicon carbide layer was synthesized by 40-keV C 12 + implantation of a p -type (100) Si wafer at a fluence of 6.5× 1017 ions cm2 at an elevated temperature. The existence of the implanted carbon in Si substrate was investigated by time-of-flight energy elastic recoil detection analysis. The SiC layer was subsequently irradiated by 10-30 MeV I 127 ions to a very low fluence of 1012 ions cm2 at temperatures from 80 to 800 °C to study the effect on the crystallization of the SiC layer. Infrared spectroscopy and Raman scattering measurement were used to monitor the formation of SiC and detailed information about the SiC film properties was obtained by analyzing the peak shape of the Si-C stretching mode absorption. The change in crystallinity of the synthesized layer was probed by glancing incidence x-ray diffraction measurement and transmission electron microscopy was also used to confirm the results and to model the crystallization process. The results from all these measurements showed in a coherent way that the synthesized structure was a polycrystalline layer with nanometer sized SiC crystals buried in a-Si matrix. The crystallinity of the SiC layer was enhanced by the low-fluence swift heavy ion bombardment and also favored by higher energy, higher fluence, and higher substrate temperature. It is suggested that electronic stopping plays a dominant role in the enhancement.
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| 4. |
- Lindahl, Erik, et al.
(författare)
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Atomic Layer Deposition of NiO by the Ni(thd)2/H2O Precursor Combination
- 2009
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Ingår i: Chemical Vapor Deposition. - : WILEY. - 0948-1907 .- 1521-3862. ; 15:7-9, s. 186-191
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Tidskriftsartikel (refereegranskat)abstract
- Polycrystalline nickel oxide is deposited on SiO2 substrates by alternating pulses of bis(2,2,6,6-tetramethylheptane-3,5-dionato)nickel(II) (Ni(thd)(2)) and H2O. The deposition process shows atomic layer deposition (ALD) characteristics with respect to the saturation behavior of the two precursors at deposition temperatures up to 275 degrees C. The growth of nickel oxide is shown to be highly dependent on surface hydroxide groups, and a large excess of H2O is required to achieve saturation. Throughout the deposition temperature range the amount of carbon in the film, originating from the metal precursor ligand, is in the range 1-2%. Above 275 degrees C ALD growth behavior is lost in favor of thermal decomposition of the metal precursor. The initial nucleation process is studied by atomic force microscopy (AFM) and reveals nucleation of well-separated grains which coalesce to a continuous film after about 250 ALD cycles.
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| 5. |
- Lindahl, Erik, et al.
(författare)
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Chemical Vapour Deposition of Metastable Ni3N
- 2009
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Ingår i: EuroCVD17/CVD17. - : The Electrochemical Society. - 9781607680956 ; , s. 365-372
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Konferensbidrag (refereegranskat)abstract
- Metastable nickel nitride (Ni3N) has been chemically vapour deposited by the use of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)Ni(II) (Ni(thd)2) and ammonia precursors. The growth on both non-etched Si(100) and amorphous SiO2 is polycrystalline at deposition temperatures between 200-290{degree sign}C. However, at the highest temperatures the impurity level of oxygen and carbon originating from the metal precursor ligand, is about 5%. The growth rate dependence of temperature is divided into three different regions with large differences in activation energies, interpreted as different factors controlling the growth. In addition the deposition rate as a function of precursor supply as well as the incubation time for the growth initiation are different at temperatures which are further indications of differences in reaction mechanism. By substitution of NH3 for H2 to the reactant gas the growth mechanism is shown to occur via surface -NHx groups.
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| 6. |
- Lindahl, Erik, 1979-, et al.
(författare)
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Epitaxial NiO(100) and NiO(111) films grown by atomic layer deposition
- 2009
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Ingår i: Journal of Crystal Growth. - : Elsevier. - 0022-0248 .- 1873-5002. ; 311:16, s. 4082-4088
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial NiO (1 1 1) and NiO (1 0 0) films have been grown by atomic layer deposition on both MgO (1 0 0) and alpha-Al2O3 (0 0 1) substrates at temperatures as low as 200 degrees C by using bis(2,2,6,6-tetramethyl-3,5-heptanedionato)Ni(II) and water as precursors. The films grown on the MgO (1 0 0) substrate show the expected cube on cube growth while the NiO (1 1 1) films grow with a twin rotated 180 degrees on the alpha-Al2O3 (0 0 1) substrate surface. The films had columnar microstructures on both substrate types. The single grains were running throughout the whole film thickness and were significantly smaller in the direction parallel to the surface. Thin NiO (1 1 1) films can be grown with high crystal quality with a FWHM of 0.02-0.05 degrees in the rocking curve measurements.
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| 7. |
- Modin, A., et al.
(författare)
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Electronic structure of Cu3N films studied by soft x-ray spectroscopy
- 2008
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 20:23
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Tidskriftsartikel (refereegranskat)abstract
- Soft x- ray emission spectroscopy was used to characterize the electronic structure of seven copper nitride films, one synthesized with atomic layer deposition ( ALD) and six grown with chemical vapor deposition ( CVD) at different preparation temperatures. Interpretation of the x- ray emission spectra was supported by calculations of the electronic structure for bulk pure Cu3N and Cu3N with: an excess of Cu atoms, oxygen or carbon impurities, and N vacancies. The calculations are shown to describe the experimental spectra quite well. Analysis of the x- ray spectra suggests that films grown in copper rich environments and above a cut- off temperature of approximately 360 degrees C have a growing fraction of copper enriched areas, while films prepared below this temperature do not have these areas with excess copper.
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| 8. |
- Olander, Jenny, et al.
(författare)
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Laser-Assisted Atomic Layer Deposition of Boron Nitride Thin Films
- 2005
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Ingår i: Chemical Vapor Deposition. - : Wiley. - 0948-1907 .- 1521-3862. ; 11, s. 330-337
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Tidskriftsartikel (refereegranskat)abstract
- Boron nitride thin films have been grown by both laser-assisted, and conventional atomic layer deposition (LALD/ALD) at temperatures in the range 250-750 °C. Both the NH3 and BBr3 precursors were appreciably dissociated by the ArF excimer laser, and up to 600 °C, the growth rate was 100 % higher for the LALD process than for ALD. The films consisted of hydrogen-terminated turbostratic BN grains. H2 was theoretically found to bind as strongly as BBrX and NHX (X = 0-2) to hBN(100) edges. The fresh films were stoichiometric with respect to B and N, and contained low degrees of contamination, but oxidized easily in air.
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