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- Törndahl, Tobias, et al.
(författare)
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Epitaxy of copper on α-Al2O3(0 0 1) by atomic layer deposition
- 2005
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 276, s. 102-110
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Tidskriftsartikel (refereegranskat)abstract
- A combined X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) study have been carried out on copper films grown by atomic layer deposition at 400 °C. The copper films have been grown on single crystalline (0 0 1) oriented α-Al2O3 up to a thickness of 500 nm. The films were relaxed and the diffraction peak broadening in 2θ was mainly dependent on the copper grain size. Broadening of the diffraction peaks in ω was found to be related to defects (mosaicity and intrinsic microstrain). The deposited films were epitaxial and grew with the (1 1 1) plane in parallel to the substrate surface. Extensive twinning in the copper grains in different Cu1 1 1 directions occurred according to the TEM study, both in directions perpendicular to the substrate surface ([1 1 1] and ) and along other 1 1 1 directions as well. As an effect of a twin, an extra Cu(5 1 1) orientation was present in the XRD data.
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| 3. |
- Törndahl, Tobias, 1974-, et al.
(författare)
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Growth of Copper(I) Nitride by ALD Using Copper(II) Hexafluoroacetylacetonate, Water and Ammonia as Precursors
- 2006
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Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 153:3, s. C146-C151
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Films of copper(I) nitride were deposited by atomic layer deposition (ALD) using copper(II) hexafluoroacetylacetonate, water, and ammonia as precursors. Introduction of a water pulse in the ALD cycle was found to be crucial for initiating film growth on both amorphous SiO2 and single-crystalline α-Al2O3(001) substrates. The water pulses generated an oxidic copper monolayer, which in a subsequent ammonia pulse was converted to the nitride. The films have been grown in the temperature range from 210to302°C . Phase pure films of Cu3N were obtained up to 265°C . At higher deposition temperatures such as 283°C , phase mixtures of Cu3N and Cu were obtained. For temperatures above 302°C films of only Cu were grown. Film growth rate was the same on the two different substrates. The films were randomly oriented on SiO2 . Completely intact films were obtained at a thickness of 20nm . The optical bandgap of the films was measured to be 1.6eV .
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