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Sökning: WFRF:(Palisaitis Justinas) > Uppsala universitet

  • Resultat 1-10 av 21
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1.
  • Bakhit, Babak, 1983-, et al. (författare)
  • Age hardening in superhard ZrB2-rich Zr1-xTaxBy thin films
  • 2021
  • Ingår i: Scripta Materialia. - : Elsevier. - 1359-6462 .- 1872-8456. ; 191, s. 120-125
  • Tidskriftsartikel (refereegranskat)abstract
    • We recently showed that sputter-deposited Zr1-xTaxBy thin films have hexagonal AlB2-type columnar nanostructure in which column boundaries are B-rich for x < 0.2, while Ta-rich for x ≥ 0.2. As-deposited layers with x ≥ 0.2 exhibit higher hardness and, simultaneously, enhanced toughness. Here, we study the mechanical properties of ZrB2.4, Zr0.8Ta0.2B1.8, and Zr0.7Ta0.3B1.5 films annealed in Ar atmosphere as a function of annealing temperature Ta up to 1200 °C. In-situ and ex-situ nanoindentation analyses reveal that all films undergo age hardening up to Ta = 800 °C, with the highest hardness achieved for Zr0.8Ta0.2B1.8 (45.5±1.0 GPa). The age hardening, which occurs without any phase separation or decomposition, can be explained by point-defect recovery that enhances chemical bond density. Although hardness decreases at Ta > 800 °C due mainly to recrystallization, column coarsening, and planar defect annihilation, all layers show hardness values above 34 GPa over the entire Ta range.
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2.
  • Dorri, Samira, 1988-, et al. (författare)
  • Enhanced quality of single crystal CrBx/TiBy diboride superlattices by controlling boron stoichiometry during sputter deposition
  • 2024
  • Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584.
  • Tidskriftsartikel (refereegranskat)abstract
    • Single-crystal CrB2/TiB2 diboride superlattices with well-defined layers are promising candidates for neutron optics. However, excess B in sputter-deposited TiBy using a single TiB2 target deteriorates the structural quality of CrBx/TiBy (0001) superlattices. We study the influence of co-sputtering of TiB2 + Ti on the stoichiometry and crystalline quality of 300-nm-thick TiBy single layers and CrBx/TiBy (0001) superlattices on Al2O3(0001) substrates grown by DC magnetron sputter epitaxy at growth-temperatures TS ranging from 600 to 900 °C. By controlling the relative applied powers to the TiB2 and Ti magnetrons, y could be reduced from 3.3 to 0.9. TiB2.3 grown at 750 °C exhibited epitaxial domains about 10x larger than non-co-sputtered films. Close-to-stoichiometry CrB1.7/TiB2.3 superlattices with modulation periods Λ = 6 nm grown at 750 °C showed the highest single crystal quality and best layer definition. TiB2.3 layers display rough top interfaces indicating kinetically limited growth while CrB1.7 forms flat and abrupt top interfaces indicating epitaxial growth with high adatom mobility.
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3.
  • Ekström, Erik, 1989-, et al. (författare)
  • Epitaxial Growth of CaMnO3–y Films on LaAlO3 (11‾20) by Pulsed Direct Current Reactive Magnetron Sputtering
  • 2022
  • Ingår i: Physica Status Solidi. Rapid Research Letters. - : Wiley-VCH Verlagsgesellschaft. - 1862-6254 .- 1862-6270. ; 16:4
  • Tidskriftsartikel (refereegranskat)abstract
    • CaMnO3 is a perovskite with attractive magnetic and thermoelectric properties. CaMnO3 films are usually grown by pulsed laser deposition or radio frequency magnetron sputtering from ceramic targets. Herein, epitaxial growth of CaMnO3–y (002) films on a (11‾20)-oriented LaAlO3 substrate using pulsed direct current reactive magnetron sputtering is demonstrated, which is more suitable for industrial scale depositions. The CaMnO3–y shows growth with a small in-plane tilt of <≈0.2° toward the (200) plane of CaMnO3–y and the (1‾104) with respect to the LaAlO3 (11‾20) substrate. X-ray photoelectron spectroscopy of the electronic core levels shows an oxygen deficiency described by CaMnO2.58 that yields a lower Seebeck coefficient and a higher electrical resistivity when compared to stoichiometric CaMnO3. The LaAlO3 (11‾20) substrate promotes tensile-strained growth of single crystals. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal antiphase boundaries composed of Ca on Mn sites along <101> and <002>, forming stacking faults.
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4.
  • Ekström, Erik, et al. (författare)
  • The effects of microstructure, Nb content and secondary Ruddlesden-Popper phase on thermoelectric properties in perovskite CaMn1-xNbxO3 (x=0-0.10) thin films
  • 2020
  • Ingår i: RSC Advances. - : Royal Society of Chemistry. - 2046-2069. ; 10:13, s. 7918-7926
  • Tidskriftsartikel (refereegranskat)abstract
    • CaMn1-xNbxO3 (x = 0, 0.5, 0.6, 0.7 and 0.10) thin films have been grown by a two-step sputtering/annealing method. First, rock-salt-structured (Ca,Mn1-x,Nb-x)O thin films were deposited on 11 & x304;00 sapphire using reactive RF magnetron co-sputtering from elemental targets of Ca, Mn and Nb. The CaMn1-xNbxO3 films were then obtained by thermally induced phase transformation from rock-salt-structured (Ca,Mn1-xNbx)O to orthorhombic during post-deposition annealing at 700 degrees C for 3 h in oxygen flow. The X-ray diffraction patterns of pure CaMnO3 showed mixed orientation, while Nb-containing films were epitaxially grown in [101] out of-plane-direction. Scanning transmission electron microscopy showed a Ruddlesden-Popper (R-P) secondary phase in the films, which results in reduction of the electrical and thermal conductivity of CaMn1-xNbxO3. The electrical resistivity and Seebeck coefficient of the pure CaMnO3 film were measured to 2.7 omega cm and -270 mu V K-1 at room temperature, respectively. The electrical resistivity and Seebeck coefficient were reduced by alloying with Nb and was measured to 0.09 omega cm and -145 mu V K-1 for x = 0.05. Yielding a power factor of 21.5 mu W K-2 m(-1) near room temperature, nearly eight times higher than for pure CaMnO3 (2.8 mu W K-2 m(-1)). The power factors for alloyed samples are low compared to other studies on phase-pure material. This is due to high electrical resistivity originating from the secondary R-P phase. The thermal conductivity of the CaMn1-xNbxO3 films is low for all samples and is the lowest for x = 0.07 and 0.10, determined to 1.6 W m(-1) K-1. The low thermal conductivity is attributed to grain boundary scattering and the secondary R-P phase.
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6.
  • Folkenant, Matilda, et al. (författare)
  • Structure and properties of Cr–C/Ag films deposited by magnetron sputtering
  • 2015
  • Ingår i: Surface & Coatings Technology. - : Elsevier. - 0257-8972 .- 1879-3347. ; 281, s. 184-192
  • Tidskriftsartikel (refereegranskat)abstract
    • Cr–C/Ag thin films with 0–14 at.% Ag have been deposited by magnetron sputtering from elemental targets. The samples were analyzed by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) to study their structure and chemical bonding. A complex nanocomposite structure consisting of three phases; nanocrystalline Ag, amorphous CrCx and amorphous carbon is reported. The carbon content in the amorphous carbide phase was determined to be 32–33 at.% C, independent of Ag content. Furthermore, SEM and XPS results showed higher amounts of Ag on the surface compared to the bulk. The hardness and Young's modulus were reduced from 12 to 8 GPa and from 270 to 170 GPa, respectively, with increasing Ag content. The contact resistance was found to decrease with Ag addition, with the most Ag rich sample approaching the values of an Ag reference sample. Initial tribological tests gave friction coefficients in the range of 0.3 to 0.5, with no clear trends. Annealing tests show that the material is stable after annealing at 500 °C for 1 h, but not after annealing at 800 °C for 1 h. In combination, these results suggest that sputtered Cr–C/Ag films could be potentially applicable for electric contact applications.
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7.
  • Halim, Joseph, et al. (författare)
  • Tailored synthesis approach of (Mo2/3Y1/3)(2)AlC i-MAX and its two-dimensional derivative Mo1.33CTz MXene: enhancing the yield, quality, and performance in supercapacitor applications
  • 2021
  • Ingår i: Nanoscale. - : ROYAL SOC CHEMISTRY. - 2040-3364 .- 2040-3372. ; 13:1, s. 311-319
  • Tidskriftsartikel (refereegranskat)abstract
    • A vacancy-ordered MXene, Mo1.33CTz, obtained from the selective etching of Al and Sc from the parent i-MAX phase (Mo2/3Sc1/3)(2)AlC has previously shown excellent properties for supercapacitor applications. Attempts to synthesize the same MXene from another precursor, (Mo2/3Y1/3)(2)AlC, have not been able to match its forerunner. Herein, we show that the use of an AlY2.3 alloy instead of elemental Al and Y for the synthesis of (Mo2/3Y1/3)(2)AlC i-MAX, results in a close to 70% increase in sample purity due to the suppression of the main secondary phase, Mo3Al2C. Furthermore, through a modified etching procedure, we obtain a Mo1.33CTz MXene of high structural quality and improve the yield by a factor of 6 compared to our previous efforts. Free-standing films show high volumetric (1308 F cm(-3)) and gravimetric (436 F g(-1)) capacitances and a high stability (98% retention) at the level of, or even beyond, those reported for the Mo1.33CTz MXene produced from the Sc-based i-MAX. These results are of importance for the realization of high quality MXenes through use of more abundant elements (Y vs. Sc), while also reducing waste (impurity) material and facilitating the synthesis of a high-performance material for applications.
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8.
  • Hellgren, Niklas, et al. (författare)
  • Synthesis and characterization of TiBx (1.2=x=2.8) thin films grown by DC magnetron co-sputtering from TiB2 and Ti targets
  • 2022
  • Ingår i: Surface & Coatings Technology. - : Elsevier. - 0257-8972 .- 1879-3347. ; 433
  • Tidskriftsartikel (refereegranskat)abstract
    • Titanium boride, TiBx, thin films were grown by direct current magnetron co-sputtering from a compound TiB2 target and a Ti target at an Ar pressure of 2.2 mTorr (0.3 Pa) and substrate temperature of 450 ?degrees C. While keeping the power of the TiB2 target constant at 250 W, and by varying the power on the Ti target, P-Ti, between 0 and 100 W, the B/Ti ratio in the film could be continuously and controllably varied from 1.2 to 2.8, with close-tostoichiometric diboride films achieved for P-Ti = 50 W. This was done without altering the deposition pressure, which is otherwise the main modulator for the composition of magnetron sputtered TiBx diboride thin films. The film structure and properties of the as-deposited films were compared to those after vacuum-annealing for 2 h at 1100 ?degrees C. As-deposited films consisted of small (?50 nm) randomly oriented TiB2 crystallites, interspersed in an amorphous, sometimes porous tissue phase. Upon annealing, some of the tissue phase crystallized, but the diboride average grain size did not change noticeably. The near-stoichiometric film had the lowest resistivity, 122 mu omega cm, after annealing. Although this film had growth-induced porosity, an interconnected network of elongated crystallites provides a path for conduction. All films exhibited high hardness, in the 25-30 GPa range, where the highest value of similar to 32 GPa was obtained for the most Ti-rich film after annealing. This film had the highest density and was nano-crystalline, where dislocation propagation is interrupted by the off-stoichiometric grain boundaries.
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9.
  • Ma, Hairui, et al. (författare)
  • Effect of modulation period and thickness ratio on the growth and mechanical properties of heteroepitaxial c-Ti0.4Al0.6N/h-Cr2N multilayer films
  • 2023
  • Ingår i: Surface & Coatings Technology. - : Elsevier. - 0257-8972 .- 1879-3347. ; 472
  • Tidskriftsartikel (refereegranskat)abstract
    • c-TiAlN/h-Cr2N multilayer thin films, with modulation period λ of 10 nm, 20 nm, and 30 nm and different Cr2N/ λ thickness ratios (25 %, 50 % and 75 %), were deposited on c-plane sapphire using reactive DC magnetron sputtering. All multilayers exhibited preferred orientation [Cr2N(0001)/ TiAlN(111)]x, regardless of the modulation period and thickness ratios. X-ray diffraction φ-scans revealed an influence of the Cr2N layer thickness on the overall orientation quality of the multilayer, where the thicker the Cr2N layer the higher orientation quality. Atomically resolved high-angle annular dark-field scanning transmission electron microscopy revealed well defined and homogeneous atom stacking in the Cr2N layers. In contrast, the cubic TiAlN layer was found to be composed of coherent cubic AlN-rich and TiN-rich regions. Additionally, the TiAlN layers were found with a higher density of grain boundaries compared to the Cr2N layers. Mechanical properties evaluation revealed that the film with a 20 nm period and 75 % Cr2N thickness ratio exhibited the highest hardness of 27.11 ± 0.72 GPa and an reduced elastic modulus of 349.1 ± 6.84 GPa. The hardness increased as the thickness of Cr2N increased, until reaching 10 nm, after which it remained at a high level (∼ 25 GPa).
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10.
  • Magnus, Fridrik, et al. (författare)
  • Sequential magnetic switching in Fe/MgO(001) superlattices
  • 2018
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 97:17
  • Tidskriftsartikel (refereegranskat)abstract
    • Polarized neutron reflectometry is used to determine the sequence of magnetic switching in interlayer exchangecoupled Fe/MgO(001) superlattices in an applied magnetic field. For 19.6 Å thick MgO layers we obtain a 90◦periodic magnetic alignment between adjacent Fe layers at remanence. In an increasing applied field the toplayer switches first followed by its second-nearest neighbor. For 16.4 Å MgO layers, a 180◦periodic alignment isobtained at remanence and with increasing applied field the layer switching starts from the two outermost layersand proceeds inwards. This sequential tuneable switching opens up the possibility of designing three-dimensionalmagnetic structures with a predefined discrete switching sequence
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