| 1. |
- Chen, Jr-Tai, et al.
(författare)
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Room-Temperature mobility above 2200 cm2/V.s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure
- 2015
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 106:25
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Tidskriftsartikel (refereegranskat)abstract
- A high mobility of 2250 cm2/V·s of a two-dimensional electron gas (2DEG) in a metalorganic chemical vapor deposition-grown AlGaN/GaN heterostructure was demonstrated. The mobility enhancement was a result of better electron confinement due to a sharp AlGaN/GaN interface, as confirmed by scanning transmission electron microscopy analysis, not owing to the formation of a traditional thin AlN exclusion layer. Moreover, we found that the electron mobility in the sharp-interface heterostructures can sustain above 2000 cm2/V·s for a wide range of 2DEG densities. Finally, it is promising that the sharp-interface AlGaN/GaN heterostructure would enable low contact resistance fabrication, less impurity-related scattering, and trapping than the AlGaN/AlN/GaN heterostructure, as the high-impurity-contained AlN is removed.
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| 2. |
- Henry, Anne, et al.
(författare)
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AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications
- 2009
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Ingår i: ECS Transactions, Vol. 25, Iss. 8. - : ECS. - 9781566777452 ; , s. 837-844
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Konferensbidrag (refereegranskat)abstract
- AlxGa1-xN multiple quantum wells (MQW) were grown on AlN epilayer grown on 4H-SiC substrate. The growth was performed without interruption in a horizontal hot-wall MOCVD reactor using a mixture of hydrogen and nitrogen as carrier gases. The precursors were ammonia, trimethylaluminum and trimethylgallium. Results obtained from X-ray diffraction and infra-red reflectance were used to obtain the composition of the films when growing simple AlxGa1 xN layer. Visible reflectance was used to evaluate the thickness of the films. Finally the MQW parameters as thicknesses and composition variation were obtained by scanning transmission electron microscopy and demonstrated an agreement with the growth parameters used
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| 3. |
- Hsu, Chih-Wei, et al.
(författare)
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Controlled Growth of GaN Pyramidal template hosting InGaN Quantum Dots
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- The emission properties of InGaN grown on hexagonal GaN pyramids with various pitch distances (PD) are studied. Emissions associated with InGaN quantum wells (QWs) and InGaN quantum dots (QDs) can be identified. The emission energies of InGaN QWs and QDs shift toward opposite directions with increasing PD; red-shift for QWs and blue-shift for QDs. Based on the source supply mechanism in a selective area growth process, the formation of InGaN QDs on GaN pyramids is believed to be a combined effect of Stranski-Krastanow growth mode and spinodal decomposition taking place at the microscopic (0001) surfaces on GaN pyramids.
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| 4. |
- Lundskog, Anders, et al.
(författare)
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InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids
- 2012
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Ingår i: Nanotechnology. - : Institute of Physics (IOP). - 0957-4484 .- 1361-6528. ; 23:30, s. 305708-
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Tidskriftsartikel (refereegranskat)abstract
- Growing InGaN quantum dots (QDs) at the apex of hexagonal GaN pyramids is an elegant approach to achieve a deterministic positioning of QDs. Despite similar synthesis procedures by metal–organic chemical vapor deposition, the optical properties of the QDs reported in the literature vary drastically. The QDs tend to exhibit either narrow or broad emission lines in the micro-photoluminescence spectra. By coupled microstructural and optical investigations, the QDs giving rise to narrow emission lines were concluded to nucleate in association with a (0001) facet at the apex of the GaN pyramid.
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| 5. |
- Lundskog, Anders, et al.
(författare)
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Unexpected behavior of InGaN quantum dot emission energy located at apices of hexagonal GaN pyramids
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- InGaN quantum dots (QDs) have been grown at the apices of hexagonal GaN pyramids. The pyramids were selectively grown on a (0001) oriented GaN template through circular apertures in a SiN mask positioned in square arrays. The emission of the InGaN QDs was shifted towards higher energies when the center-to-center distance of the pyramids was increased, while the emission from InGaN quantum wells located on the {1101} facets of the pyramids was energetically shifted towards lower energies. No energy shift was observed for (0001) truncated pyramids with truncation diameters larger than 100 nm.
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| 6. |
- Palisaitis, Justinas, et al.
(författare)
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Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopy
- 2014
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 115:3, s. 034302-
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Tidskriftsartikel (refereegranskat)abstract
- The early stages of InGaN/GaN quantum wells growth for In reduced conditions have been investigated for varying thickness and composition of the wells. The structures were studied by monochromated STEM–VEELS spectrum imaging at high spatial resolution. It is found that beyond a critical well thickness and composition, quantum dots (>20 nm) are formed inside the well. These are buried by compositionally graded InGaN, which is formed as GaN is grown while residual In is incorporated into the growing structure. It is proposed that these dots may act as carrier localization centers inside the quantum wells.
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| 7. |
- ul-Hassan, Jawad, et al.
(författare)
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Growth and properties of SiC on-axis homoepitaxial layers
- 2010
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Ingår i: ICSCRM 2009. - : Trans Tech Publications. ; , s. 83-88
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Konferensbidrag (refereegranskat)abstract
- Homoepitaxial growth has been performed on 3 Si-face on-axis 4H-SiC substrates using standard gas system in a horizontal Hot-wall chemical vapor deposition system. Substrate surface damages are found to act as preferential nucleation sites for 3C inclusions also, the surface morphology after in-situ etching is found to largely influence the polytype stability in the epilayer. Different in-situ etching conditions were studied where Si-rich conditions are found to be better. Growth parameters and starting growth conditions are refined to obtain stable polytype in the epilayer. High quality homoepitaxial layers with 100% 4H-SiC are obtained on 3 substrates. Different optical and structural techniques are used to characterize the layers and to understand the growth mechanisms. The layers are found to be of high quality and no epitaxial defects typically found on off-axis epitaxial layers are observed. A high surface roughness is observed in these layers, however higher growth rate significantly lowers the surface roughness without affecting the polytype stability in the epilayer.
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