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Träfflista för sökning "WFRF:(Palisaitis Justinas) ;pers:(Karlsson K Fredrik)"

Sökning: WFRF:(Palisaitis Justinas) > Karlsson K Fredrik

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1.
  • Amloy, Supaluck, et al. (författare)
  • Excitons and biexcitons in InGaN quantum dot like localization centers
  • 2014
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 25:49, s. 495702-
  • Tidskriftsartikel (refereegranskat)abstract
    • Indium segregation in a narrow InGaN single quantum well creates quantum dot (QD) like exciton localization centers. Cross-section transmission electron microscopy reveals varying shapes and lateral sizes in the range ∼1–5 nm of the QD-like features, while scanning near field optical microscopy demonstrates a highly inhomogeneous spatial distribution of optically active individual localization centers. Microphotoluminescence spectroscopy confirms the spectrally inhomogeneous distribution of localization centers, in which the exciton and the biexciton related emissions from single centers of varying geometry could be identified by means of excitation power dependencies. Interestingly, the biexciton binding energy (Ebxx) was found to vary from center to center, between 3 to −22 meV, in correlation with the exciton emission energy. Negative binding energies are only justified by a three-dimensional quantum confinement, which confirms QD-like properties of the localization centers. The observed energy correlation is proposed to be understood as variations of the lateral extension of the confinement potential, which would yield smaller values of Ebxx for reduced lateral extension and higher exciton emission energy. The proposed relation between lateral extension and Ebxx is further supported by the exciton and the biexciton recombination lifetimes of a single QD, which suggest a lateral extension of merely ∼3 nm for a QD with strongly negative Ebxx = −15.5 meV. 
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2.
  • Hsu, Chih-Wei, et al. (författare)
  • Controlled Growth of GaN Pyramidal template hosting InGaN Quantum Dots
  • Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
    • The emission properties of InGaN grown on hexagonal GaN pyramids with various pitch distances (PD) are studied. Emissions associated with InGaN quantum wells (QWs) and InGaN quantum dots (QDs) can be identified. The emission energies of InGaN QWs and QDs shift toward opposite directions with increasing PD; red-shift for QWs and blue-shift for QDs. Based on the source supply mechanism in a selective area growth process, the formation of InGaN QDs on GaN pyramids is believed to be a combined effect of Stranski-Krastanow growth mode and spinodal decomposition taking place at the microscopic (0001) surfaces on GaN pyramids.
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3.
  • Lundskog, Anders, et al. (författare)
  • Unexpected behavior of InGaN quantum dot emission energy located at apices of hexagonal GaN pyramids
  • Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
    • InGaN quantum dots (QDs) have been grown at the apices of hexagonal GaN pyramids. The pyramids were selectively grown on a (0001) oriented GaN template through circular apertures in a SiN mask positioned in square arrays. The emission of the InGaN QDs was shifted towards higher energies when the center-to-center distance of the pyramids was increased, while the emission from InGaN quantum wells located on the {1101} facets of the pyramids was energetically shifted towards lower energies. No energy shift was observed for (0001) truncated pyramids with truncation diameters larger than 100 nm.
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  • Resultat 1-3 av 3

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